Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices (1995)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Abstracts
- Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD
-
ABNT
PUSEP, Yuri A et al. Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. 1995, Anais.. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 27 dez. 2025. -
APA
Pusep, Y. A., Silva, S., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. In Abstracts. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Pusep YA, Silva S, Galzerani JC, Lubyshev DI, Basmaji P. Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. Abstracts. 1995 ;[citado 2025 dez. 27 ] -
Vancouver
Pusep YA, Silva S, Galzerani JC, Lubyshev DI, Basmaji P. Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. Abstracts. 1995 ;[citado 2025 dez. 27 ] - Nano estruturas luminescentes de silicio poroso fabricado pelo processo eletroquimico
- Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy
- Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'
- Photoluminescence fatigue-effect cycling in porous silicon
- Shallow and deep dx center in 'PB'-doped 'AL IND.X''GA IND.1-X''AS'
- Capacitance-voltage characterization of InAs and InGaAs quantum dots
- Hydrostatic pressure studies of GaAs tunnel diodes
- Surface phonon observed in GaAs wire crystals grown on porous Si
- Evidence of localized luminescence centers in porous silicon
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
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