Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices (1995)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Abstracts
- Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD
-
ABNT
PUSEP, Yuri A. et al. Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. 1995, Anais.. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo, 1995. . Acesso em: 25 set. 2024. -
APA
Pusep, Y. A., Silva, S., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. In Abstracts. Singapore: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Pusep YA, Silva S, Galzerani JC, Lubyshev DI, Basmaji P. Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. Abstracts. 1995 ;[citado 2024 set. 25 ] -
Vancouver
Pusep YA, Silva S, Galzerani JC, Lubyshev DI, Basmaji P. Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices. Abstracts. 1995 ;[citado 2024 set. 25 ] - Raman scattering of the optical '('GA''AS') IND. n'/ '('AL''AS') IND. n' superlattices grown on (311)A and (311)B surface
- Spectroscopy of optical phonons in InAs/GaAs self-assembled quantum dots
- Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
- Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
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