Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy (1991)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Crystal Growth
- Volume/Número/Paginação/Ano: v.108, p.615-20, 1991
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ABNT
BERNUSSI, A A et al. Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, v. 108, p. 615-20, 1991Tradução . . Acesso em: 27 dez. 2025. -
APA
Bernussi, A. A., Iikawa, F., Motisuke, P., & Basmaji, P. (1991). Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 108, 615-20. -
NLM
Bernussi AA, Iikawa F, Motisuke P, Basmaji P. Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 1991 ;108 615-20.[citado 2025 dez. 27 ] -
Vancouver
Bernussi AA, Iikawa F, Motisuke P, Basmaji P. Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 1991 ;108 615-20.[citado 2025 dez. 27 ] - Nano estruturas luminescentes de silicio poroso fabricado pelo processo eletroquimico
- Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'
- Photoluminescence fatigue-effect cycling in porous silicon
- Shallow and deep dx center in 'PB'-doped 'AL IND.X''GA IND.1-X''AS'
- Capacitance-voltage characterization of InAs and InGaAs quantum dots
- Hydrostatic pressure studies of GaAs tunnel diodes
- Surface phonon observed in GaAs wire crystals grown on porous Si
- Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices
- Evidence of localized luminescence centers in porous silicon
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
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