Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices (1996)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Abstracts
- Conference titles: International Conference on Raman Spectroscopy
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ABNT
PUSEP, Yuri A et al. Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices. 1996, Anais.. Pittsburg: Instituto de Física de São Carlos, Universidade de São Paulo, 1996. . Acesso em: 25 jan. 2026. -
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1996). Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices. In Abstracts. Pittsburg: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices. Abstracts. 1996 ;[citado 2026 jan. 25 ] -
Vancouver
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Break-down of raman selection rules for optic confined photons caused by the different arrangements of the normal and inverted interfaces in GaAs/AlAs superlattices. Abstracts. 1996 ;[citado 2026 jan. 25 ] - Evidence of localized luminescence centers in porous silicon
- Properties of 'AL IND.X''GA IND.1-X''AS' with an 'AL''AS' buffer layer on 'SI' substrates grown by metalorganic vapor phase epitaxy
- Luminescence degradation and fatigue effects in porous silicon
- Ion incorporation and exchange effects in porous silicon
- Optical absorption in porous silicon of high porosity
- Formacao natural de pontos quanticos
- Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Capacitance-voltage characterization of InAs and InGaAs quantum dots
- Surface phonon and 'E IND.1' gap shift observed in 'IN''AS' wire crystals on porous 'SI'
- Low dimensional quantum structures grown by molecular beam epitaxy
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