A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor (1998)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/LACTRO/LAC
- Publisher place: Curitiba
- Date published: 1998
- Source:
- Título: SBMicro'ICMP 98 : Proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor. 1998, Anais.. Curitiba: SBMicro/LACTRO/LAC, 1998. . Acesso em: 09 jul. 2025. -
APA
Sonnenberg, V., & Martino, J. A. (1998). A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor. In SBMicro'ICMP 98 : Proceedings. Curitiba: SBMicro/LACTRO/LAC. -
NLM
Sonnenberg V, Martino JA. A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor. SBMicro'ICMP 98 : Proceedings. 1998 ;[citado 2025 jul. 09 ] -
Vancouver
Sonnenberg V, Martino JA. A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor. SBMicro'ICMP 98 : Proceedings. 1998 ;[citado 2025 jul. 09 ] - Obtenção da estrutura de perfil de um transistor MOS a partir de parâmetros PSPICE
- Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high temperatures
- A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET
- The graded-channel SOI NMOSFET and its potential to analog applications
- CPU didática. (também em CD-Rom)
- Optimization of the twin gate SOI MOSFET
- Método simples para obtenção de variação da carga efetiva no óxido de um SOI-MOSFET em função da radiação. (em CD-Rom)
- Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation
- A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in accumulation-mode P-channel SOI MOSFETs. (em CD-Rom)
- Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET
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