A novel leakage drain current model for SOI MOSFETs devices at high temperature (1999)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: ENGENHARIA ELÉTRICA
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/IMAPS
- Publisher place: São Paulo
- Date published: 1999
- Source:
- Título: ICMP 99 : Technical Digest
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
BELLODI, Marcello e MARTINO, João Antonio. A novel leakage drain current model for SOI MOSFETs devices at high temperature. 1999, Anais.. São Paulo: SBMicro/IMAPS, 1999. . Acesso em: 20 jan. 2026. -
APA
Bellodi, M., & Martino, J. A. (1999). A novel leakage drain current model for SOI MOSFETs devices at high temperature. In ICMP 99 : Technical Digest. São Paulo: SBMicro/IMAPS. -
NLM
Bellodi M, Martino JA. A novel leakage drain current model for SOI MOSFETs devices at high temperature. ICMP 99 : Technical Digest. 1999 ;[citado 2026 jan. 20 ] -
Vancouver
Bellodi M, Martino JA. A novel leakage drain current model for SOI MOSFETs devices at high temperature. ICMP 99 : Technical Digest. 1999 ;[citado 2026 jan. 20 ] - Analog performance and application of graded-channel fully depleted SOI MOSFETs
- Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Simple method to determine the poly gate doping concentration based on poly depletion effect
- A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices
- Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
- A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region
- A simple method to model nonrectangular-gate layout in SOI MOSFETs
- New leakage drain current model for high temperature soi mesfet
- Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k
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