A novel leakage drain current model for SOI MOSFETs devices at high temperature (1999)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: ENGENHARIA ELÉTRICA
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/IMAPS
- Publisher place: São Paulo
- Date published: 1999
- Source:
- Título: ICMP 99 : Technical Digest
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
BELLODI, Marcello e MARTINO, João Antonio. A novel leakage drain current model for SOI MOSFETs devices at high temperature. 1999, Anais.. São Paulo: SBMicro/IMAPS, 1999. . Acesso em: 17 nov. 2025. -
APA
Bellodi, M., & Martino, J. A. (1999). A novel leakage drain current model for SOI MOSFETs devices at high temperature. In ICMP 99 : Technical Digest. São Paulo: SBMicro/IMAPS. -
NLM
Bellodi M, Martino JA. A novel leakage drain current model for SOI MOSFETs devices at high temperature. ICMP 99 : Technical Digest. 1999 ;[citado 2025 nov. 17 ] -
Vancouver
Bellodi M, Martino JA. A novel leakage drain current model for SOI MOSFETs devices at high temperature. ICMP 99 : Technical Digest. 1999 ;[citado 2025 nov. 17 ] - Obtenção da estrutura de perfil de um transistor MOS a partir de parâmetros PSPICE
- A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET
- The graded-channel SOI NMOSFET and its potential to analog applications
- CPU didática. (também em CD-Rom)
- Optimization of the twin gate SOI MOSFET
- Método simples para obtenção de variação da carga efetiva no óxido de um SOI-MOSFET em função da radiação. (em CD-Rom)
- Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation
- A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in accumulation-mode P-channel SOI MOSFETs. (em CD-Rom)
- Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET
- A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature
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