Comparison between single and double Langmuir probe techniques for analysis of inductively coupled plasmas (1998)
- Authors:
- USP affiliated authors: VERDONCK, PATRICK BERNARD - EP ; MACIEL, HOMERO SANTIAGO - EP ; MANSANO, RONALDO DOMINGUES - EP ; CIRINO, GIUSEPPE ANTONIO - EP
- Unidade: EP
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia Eletrônica
- ISSN: 1413-2206
- Volume/Número/Paginação/Ano: n.24, 1998
-
ABNT
CIRINO, Giuseppe Antonio et al. Comparison between single and double Langmuir probe techniques for analysis of inductively coupled plasmas. Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia Eletrônica, n. 24, 1998Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/c9559dc0-1d98-4754-9937-3f8cf6152a9a/BT-PEE-98_24_250925_153401.pdf. Acesso em: 16 fev. 2026. -
APA
Cirino, G. A., Verdonck, P. B., Maciel, H. S., Castro, R. M., Massi, M., Pisani, M. B., & Mansano, R. D. (1998). Comparison between single and double Langmuir probe techniques for analysis of inductively coupled plasmas. Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia Eletrônica, (24). Recuperado de https://repositorio.usp.br/directbitstream/c9559dc0-1d98-4754-9937-3f8cf6152a9a/BT-PEE-98_24_250925_153401.pdf -
NLM
Cirino GA, Verdonck PB, Maciel HS, Castro RM, Massi M, Pisani MB, Mansano RD. Comparison between single and double Langmuir probe techniques for analysis of inductively coupled plasmas [Internet]. Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia Eletrônica. 1998 ;(24):[citado 2026 fev. 16 ] Available from: https://repositorio.usp.br/directbitstream/c9559dc0-1d98-4754-9937-3f8cf6152a9a/BT-PEE-98_24_250925_153401.pdf -
Vancouver
Cirino GA, Verdonck PB, Maciel HS, Castro RM, Massi M, Pisani MB, Mansano RD. Comparison between single and double Langmuir probe techniques for analysis of inductively coupled plasmas [Internet]. Boletim Técnico da Escola Politécnica da USP. Departamento de Engenharia Eletrônica. 1998 ;(24):[citado 2026 fev. 16 ] Available from: https://repositorio.usp.br/directbitstream/c9559dc0-1d98-4754-9937-3f8cf6152a9a/BT-PEE-98_24_250925_153401.pdf - Silicon surface roughness induced by SF6-based reactive ion etching processes for micromachining applications
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- Effects of plasma etching on DLC films
- Electrical and structural characterization of DLC films deposited by magnetron sputtering
- Silicon surface roughness induced by reactive ion etching processes, using a graphite electrode. (Em CD-Rom)
- Electrical and structural characterisation of DLC films deposited by magnetron sputtering
- Characterization of mode transitions for RF discharges in different gases
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