A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in accumulation-mode P-channel SOI MOSFETs. (em CD-Rom) (1997)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Subjects: CIRCUITOS INTEGRADOS; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: SBMICRO/EFEI
- Publisher place: Itajubá
- Date published: 1997
- Source:
- Título: Proceedings
- Conference titles: Conference of the Brazilian Microelectronics Society
-
ABNT
MARTINO, João Antonio e PAVANELLO, Marcelo Antonio. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in accumulation-mode P-channel SOI MOSFETs. (em CD-Rom). 1997, Anais.. Itajubá: SBMICRO/EFEI, 1997. . Acesso em: 11 mar. 2026. -
APA
Martino, J. A., & Pavanello, M. A. (1997). A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in accumulation-mode P-channel SOI MOSFETs. (em CD-Rom). In Proceedings. Itajubá: SBMICRO/EFEI. -
NLM
Martino JA, Pavanello MA. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in accumulation-mode P-channel SOI MOSFETs. (em CD-Rom). Proceedings. 1997 ;[citado 2026 mar. 11 ] -
Vancouver
Martino JA, Pavanello MA. A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in accumulation-mode P-channel SOI MOSFETs. (em CD-Rom). Proceedings. 1997 ;[citado 2026 mar. 11 ] - Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance
- Caracterização elétrica de dispositivos SOI MOS em baixa temperatura
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Combined l and series resistance extraction of ldd mosfets
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Transistor soi-nmosfet nao auto-alinhado
- Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs
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