Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom) (1997)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Subjects: CIRCUITOS INTEGRADOS; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: SBMICRO/EFEI
- Publisher place: Itajubá
- Date published: 1997
- Source:
- Título: Proceedings
- Conference titles: Conference of the Brazilian Microelectronics Society
-
ABNT
BELLODI, Marcello e MARTINO, João Antonio. Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom). 1997, Anais.. Itajubá: SBMICRO/EFEI, 1997. . Acesso em: 17 maio 2025. -
APA
Bellodi, M., & Martino, J. A. (1997). Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom). In Proceedings. Itajubá: SBMICRO/EFEI. -
NLM
Bellodi M, Martino JA. Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom). Proceedings. 1997 ;[citado 2025 maio 17 ] -
Vancouver
Bellodi M, Martino JA. Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom). Proceedings. 1997 ;[citado 2025 maio 17 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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