Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation (1997)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Solid-State Devices and Circuits
- Volume/Número/Paginação/Ano: v. 5, n. 1, p. 1-4, feb. 1997
-
ABNT
NICOLETT, Aparecido Sirley et al. Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits, v. 5, n. 1, p. 1-4, 1997Tradução . . Acesso em: 07 dez. 2025. -
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1997). Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits, 5( 1), 1-4. -
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits. 1997 ; 5( 1): 1-4.[citado 2025 dez. 07 ] -
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits. 1997 ; 5( 1): 1-4.[citado 2025 dez. 07 ] - Obtenção da estrutura de perfil de um transistor MOS a partir de parâmetros PSPICE
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- The graded-channel SOI NMOSFET and its potential to analog applications
- CPU didática. (também em CD-Rom)
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- Método simples para obtenção de variação da carga efetiva no óxido de um SOI-MOSFET em função da radiação. (em CD-Rom)
- A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in accumulation-mode P-channel SOI MOSFETs. (em CD-Rom)
- Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET
- A simple method for minimizing the transient effect in SOI nMOSFETs at low temperature
- Triple gate finFET parameter extraction using high frequency capacitance - voltage curves
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