Deep trench etching in silicon with fluorine containing plasmas (1996)
- Authors:
- USP affiliated authors: MACIEL, HOMERO SANTIAGO - EP ; VERDONCK, PATRICK BERNARD - EP ; MANSANO, RONALDO DOMINGUES - EP
- Unidade: EP
- DOI: 10.1016/0169-4332(96)00343-1
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Applied Surface Science
- Volume/Número/Paginação/Ano: v. 100/101, p. 583-586, 1996
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, H. S. Deep trench etching in silicon with fluorine containing plasmas. Applied Surface Science, v. 100/101, p. 583-586, 1996Tradução . . Disponível em: https://doi.org/10.1016/0169-4332(96)00343-1. Acesso em: 04 ago. 2025. -
APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1996). Deep trench etching in silicon with fluorine containing plasmas. Applied Surface Science, 100/101, 583-586. doi:10.1016/0169-4332(96)00343-1 -
NLM
Mansano RD, Verdonck PB, Maciel HS. Deep trench etching in silicon with fluorine containing plasmas [Internet]. Applied Surface Science. 1996 ; 100/101 583-586.[citado 2025 ago. 04 ] Available from: https://doi.org/10.1016/0169-4332(96)00343-1 -
Vancouver
Mansano RD, Verdonck PB, Maciel HS. Deep trench etching in silicon with fluorine containing plasmas [Internet]. Applied Surface Science. 1996 ; 100/101 583-586.[citado 2025 ago. 04 ] Available from: https://doi.org/10.1016/0169-4332(96)00343-1 - Silicon wall profiles generated by isotropic dry etching process
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Informações sobre o DOI: 10.1016/0169-4332(96)00343-1 (Fonte: oaDOI API)
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