Impact of surface mobility degradation on the effective channel lenght and series resistance extraction in submicron fully depleted soi mosfets (1995)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: Instituto de Informatica da Ufrgs
- Publisher place: Porto Alegre
- Date published: 1995
- Source:
- Título: Proceedings
- Conference titles: Congress of the Brazilian Microelectronics Society
-
ABNT
NICOLETT, Aparecido Sirley et al. Impact of surface mobility degradation on the effective channel lenght and series resistance extraction in submicron fully depleted soi mosfets. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 19 fev. 2026. -
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1995). Impact of surface mobility degradation on the effective channel lenght and series resistance extraction in submicron fully depleted soi mosfets. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs. -
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Impact of surface mobility degradation on the effective channel lenght and series resistance extraction in submicron fully depleted soi mosfets. Proceedings. 1995 ;[citado 2026 fev. 19 ] -
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Impact of surface mobility degradation on the effective channel lenght and series resistance extraction in submicron fully depleted soi mosfets. Proceedings. 1995 ;[citado 2026 fev. 19 ] - Impact of TiN metal gate thickness and the HsSiO nitridation on MuGFETs electrical performance
- Caracterização elétrica de dispositivos SOI MOS em baixa temperatura
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Combined l and series resistance extraction of ldd mosfets
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- The impact of gate length scaling on UTBOX FDSOI devices: the digital/analog performance of extension-less structures
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Transistor soi-nmosfet nao auto-alinhado
- Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs
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