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Artigo de periodico
Tunnel-FET evolution and applications for analog circuits (2022)
Agopian, Paula Ghedini Der ; Martino, João Antonio ; Simoen, Eddy ; Rooyackers, Rita ; Claeys, Cor
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assuntos: TRANSISTORES, SENSOR, CIRCUITOS ANALÓGICOS, CIRCUITOS DIGITAIS
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ABNT
AGOPIAN, Paula Ghedini Der et al. Tunnel-FET evolution and applications for analog circuits. Journal of Integrated Circuits and Systems, v. 17, n. 2, p. 1-7, 2022Tradução . . Disponível em: https://doi.org/10.29292/jics.v17i2.631. Acesso em: 15 nov. 2025.
APA
Agopian, P. G. D., Martino, J. A., Simoen, E., Rooyackers, R., & Claeys, C. (2022). Tunnel-FET evolution and applications for analog circuits. Journal of Integrated Circuits and Systems, 17( 2), 1-7. doi:10.29292/jics.v17i2.631
NLM
Agopian PGD, Martino JA, Simoen E, Rooyackers R, Claeys C. Tunnel-FET evolution and applications for analog circuits [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-7.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.631
Vancouver
Agopian PGD, Martino JA, Simoen E, Rooyackers R, Claeys C. Tunnel-FET evolution and applications for analog circuits [Internet]. Journal of Integrated Circuits and Systems. 2022 ; 17( 2): 1-7.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v17i2.631
Artigo de periodico
Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies (2017)
Itocazu, Vitor Tatsuo ; Sonnenberg, Victor ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
ITOCAZU, Vitor Tatsuo et al. Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies. Journal of Integrated Circuits and Systems, v. 12, n. 2, p. 82-88, 2017Tradução . . Disponível em: https://doi.org/10.29292/jics.v12i2.455. Acesso em: 15 nov. 2025.
APA
Itocazu, V. T., Sonnenberg, V., Martino, J. A., Simoen, E., & Claeys, C. (2017). Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies. Journal of Integrated Circuits and Systems, 12( 2), 82-88. doi:10.29292/jics.v12i2.455
NLM
Itocazu VT, Sonnenberg V, Martino JA, Simoen E, Claeys C. Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies [Internet]. Journal of Integrated Circuits and Systems. 2017 ; 12( 2): 82-88.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v12i2.455
Vancouver
Itocazu VT, Sonnenberg V, Martino JA, Simoen E, Claeys C. Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies [Internet]. Journal of Integrated Circuits and Systems. 2017 ; 12( 2): 82-88.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v12i2.455
Artigo de periodico
Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation (2016)
Itocazu, Vitor Tatsuo ; Martino, João Antonio ; Sasaki, Kátia Regina Akemi; Simoen, Eddy ; Claeys, Cor ; Sonnenberg, Victor
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
ITOCAZU, Vitor Tatsuo et al. Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation. Journal of Integrated Circuits and Systems, v. 12, n. 2, p. 101-106, 2016Tradução . . Disponível em: https://doi.org/10.29292/jics.v12i2.458. Acesso em: 15 nov. 2025.
APA
Itocazu, V. T., Martino, J. A., Sasaki, K. R. A., Simoen, E., Claeys, C., & Sonnenberg, V. (2016). Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation. Journal of Integrated Circuits and Systems, 12( 2), 101-106. doi:10.29292/jics.v12i2.458
NLM
Itocazu VT, Martino JA, Sasaki KRA, Simoen E, Claeys C, Sonnenberg V. Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation [Internet]. Journal of Integrated Circuits and Systems. 2016 ; 12( 2): 101-106.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v12i2.458
Vancouver
Itocazu VT, Martino JA, Sasaki KRA, Simoen E, Claeys C, Sonnenberg V. Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation [Internet]. Journal of Integrated Circuits and Systems. 2016 ; 12( 2): 101-106.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v12i2.458
Artigo de periodico
Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs (2014)
Teixeira, Fernando Ferrari; Martino, João Antonio ; Bordallo, Caio Cesar Mendes ; Silveira, Marcilei Aparecida Guazzelli da; Agopian, Paula Ghedini Der ; Simoen, Eddy ; Claeys, Cor
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assuntos: MICROELETRÔNICA, RAIOS X
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ABNT
TEIXEIRA, Fernando Ferrari et al. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 97-102, 2014Tradução . . Disponível em: https://doi.org/10.29292/jics.v9i2.394. Acesso em: 15 nov. 2025.
APA
Teixeira, F. F., Martino, J. A., Bordallo, C. C. M., Silveira, M. A. G. da, Agopian, P. G. D., Simoen, E., & Claeys, C. (2014). Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs. Journal of Integrated Circuits and Systems, 9( 2), 97-102. doi:10.29292/jics.v9i2.394
NLM
Teixeira FF, Martino JA, Bordallo CCM, Silveira MAG da, Agopian PGD, Simoen E, Claeys C. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 97-102.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v9i2.394
Vancouver
Teixeira FF, Martino JA, Bordallo CCM, Silveira MAG da, Agopian PGD, Simoen E, Claeys C. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 97-102.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v9i2.394
Artigo de periodico
Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results (2014)
Nissimoff, Albert; Claeys, Cor ; Aoulaiche, Marc; Sasaki, Karen Lucia Mayumi; Simoen, Eddy ; Martino, João Antonio
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NISSIMOFF, Albert et al. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 91-96, 2014Tradução . . Disponível em: https://doi.org/10.29292/jics.v9i2.393. Acesso em: 15 nov. 2025.
APA
Nissimoff, A., Claeys, C., Aoulaiche, M., Sasaki, K. L. M., Simoen, E., & Martino, J. A. (2014). Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results. Journal of Integrated Circuits and Systems, 9( 2), 91-96. doi:10.29292/jics.v9i2.393
NLM
Nissimoff A, Claeys C, Aoulaiche M, Sasaki KLM, Simoen E, Martino JA. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 91-96.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v9i2.393
Vancouver
Nissimoff A, Claeys C, Aoulaiche M, Sasaki KLM, Simoen E, Martino JA. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 91-96.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v9i2.393
Artigo de periodico
Nanowire Tunnel Field Effect Transistors at High Temperature (2013)
Martino, Márcio Dalla Valle; Neves, Felipe Souza; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Rooyackers, Rita; Claeys, Cor
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: NANOELETRÔNICA
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ABNT
MARTINO, Márcio Dalla Valle et al. Nanowire Tunnel Field Effect Transistors at High Temperature. Journal of Integrated Circuits and Systems, v. 8, n. 2, p. 110-115, 2013Tradução . . Disponível em: https://doi.org/10.29292/jics.v8i2.381. Acesso em: 15 nov. 2025.
APA
Martino, M. D. V., Neves, F. S., Agopian, P. G. D., Martino, J. A., Rooyackers, R., & Claeys, C. (2013). Nanowire Tunnel Field Effect Transistors at High Temperature. Journal of Integrated Circuits and Systems, 8( 2), 110-115. doi:10.29292/jics.v8i2.381
NLM
Martino MDV, Neves FS, Agopian PGD, Martino JA, Rooyackers R, Claeys C. Nanowire Tunnel Field Effect Transistors at High Temperature [Internet]. Journal of Integrated Circuits and Systems. 2013 ;8( 2): 110-115.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v8i2.381
Vancouver
Martino MDV, Neves FS, Agopian PGD, Martino JA, Rooyackers R, Claeys C. Nanowire Tunnel Field Effect Transistors at High Temperature [Internet]. Journal of Integrated Circuits and Systems. 2013 ;8( 2): 110-115.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v8i2.381
Artigo de periodico
Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs (2010)
Santos, Sara Dereste dos; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: TRANSISTORES
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ABNT
SANTOS, Sara Dereste dos et al. Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 154-159, 2010Tradução . . Disponível em: https://doi.org/10.29292/jics.v5i2.322. Acesso em: 15 nov. 2025.
APA
Santos, S. D. dos, Martino, J. A., Simoen, E., & Claeys, C. (2010). Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs. Journal of Integrated Circuits and Systems, 5( 2), 154-159. doi:10.29292/jics.v5i2.322
NLM
Santos SD dos, Martino JA, Simoen E, Claeys C. Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 154-159.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v5i2.322
Vancouver
Santos SD dos, Martino JA, Simoen E, Claeys C. Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple gate FinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 154-159.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v5i2.322
Artigo de periodico
Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs (2010)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor ; Rooyackers, Rita; Collaert, Nadine
Fonte: Journal of Integrated Circuits and Systems. Unidade: EP
Assunto: TRANSISTORES
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ABNT
PAVANELLO, Marcelo Antonio et al. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 168-173, 2010Tradução . . Disponível em: https://doi.org/10.29292/jics.v5i2.324. Acesso em: 15 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C., Rooyackers, R., & Collaert, N. (2010). Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs. Journal of Integrated Circuits and Systems, 5( 2), 168-173. doi:10.29292/jics.v5i2.324
NLM
Pavanello MA, Martino JA, Simoen E, Claeys C, Rooyackers R, Collaert N. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 168-173.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v5i2.324
Vancouver
Pavanello MA, Martino JA, Simoen E, Claeys C, Rooyackers R, Collaert N. Performance of source follower buffers implemented with standard and strained triple-gate nFinFETs [Internet]. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 168-173.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v5i2.324

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