ReP USP - Resultado da busca

Trabalho de evento
Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's (2022)
Ribeiro, Arllen D.R.; Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMICRO. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: MICROELETRÔNICA, SILÍCIO, INOVAÇÕES TECNOLÓGICAS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RIBEIRO, Arllen D.R. et al. Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's. 2022, Anais.. Piscataway: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881005. Acesso em: 27 set. 2024.
APA
Ribeiro, A. D. R., Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2022). Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's. In SBMICRO. Piscataway: IEEE. doi:10.1109/SBMICRO55822.2022.9881005
NLM
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's [Internet]. SBMICRO. 2022 ;[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881005
Vancouver
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Uniaxially strained silicon influence on two-stage operational transconductance amplifiers designed with SOI FinFET's [Internet]. SBMICRO. 2022 ;[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881005
Artigo de periodico
The role of aluminum in the formation of macropores, microtubes of silicon and nickel made from porous silicon (2019)
Huanca, Danilo Roque ; Salcedo, Walter Jaimes
Source: Journal of Alloys and Compounds. Unidade: EP
Subjects: MICROTUBOS, SILÍCIO, ELETROQUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HUANCA, Danilo Roque e SALCEDO, Walter Jaimes. The role of aluminum in the formation of macropores, microtubes of silicon and nickel made from porous silicon. Journal of Alloys and Compounds, v. 777, p. 554-561, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.jallcom.2018.10.305. Acesso em: 27 set. 2024.
APA
Huanca, D. R., & Salcedo, W. J. (2019). The role of aluminum in the formation of macropores, microtubes of silicon and nickel made from porous silicon. Journal of Alloys and Compounds, 777, 554-561. doi:10.1016/j.jallcom.2018.10.305
NLM
Huanca DR, Salcedo WJ. The role of aluminum in the formation of macropores, microtubes of silicon and nickel made from porous silicon [Internet]. Journal of Alloys and Compounds. 2019 ; 777 554-561.[citado 2024 set. 27 ] Available from: https://doi.org/10.1016/j.jallcom.2018.10.305
Vancouver
Huanca DR, Salcedo WJ. The role of aluminum in the formation of macropores, microtubes of silicon and nickel made from porous silicon [Internet]. Journal of Alloys and Compounds. 2019 ; 777 554-561.[citado 2024 set. 27 ] Available from: https://doi.org/10.1016/j.jallcom.2018.10.305
Artigo de periodico
Physical and Electrochemical Characterization of Crystalline Silicon Surfaces Modified by Aluminum (2018)
Huanca, Danilo Roque ; Salcedo, Walter Jaimes
Source: Physica Status Solidi A Applications and Materials Science. Unidade: EP
Subjects: IMPEDÂNCIA ELÉTRICA, ESPECTROSCOPIA, SILÍCIO, TRATAMENTO TÉRMICO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HUANCA, Danilo Roque e SALCEDO, Walter Jaimes. Physical and Electrochemical Characterization of Crystalline Silicon Surfaces Modified by Aluminum. Physica Status Solidi A Applications and Materials Science, v. 215, n. 2, p. 1700543, 2018Tradução . . Disponível em: https://doi.org/10.1002/pssa.201700543. Acesso em: 27 set. 2024.
APA
Huanca, D. R., & Salcedo, W. J. (2018). Physical and Electrochemical Characterization of Crystalline Silicon Surfaces Modified by Aluminum. Physica Status Solidi A Applications and Materials Science, 215( 2), 1700543. doi:10.1002/pssa.201700543
NLM
Huanca DR, Salcedo WJ. Physical and Electrochemical Characterization of Crystalline Silicon Surfaces Modified by Aluminum [Internet]. Physica Status Solidi A Applications and Materials Science. 2018 ; 215( 2): 1700543.[citado 2024 set. 27 ] Available from: https://doi.org/10.1002/pssa.201700543
Vancouver
Huanca DR, Salcedo WJ. Physical and Electrochemical Characterization of Crystalline Silicon Surfaces Modified by Aluminum [Internet]. Physica Status Solidi A Applications and Materials Science. 2018 ; 215( 2): 1700543.[citado 2024 set. 27 ] Available from: https://doi.org/10.1002/pssa.201700543
Artigo de periodico
Huge enhancement of photoluminescence emission from porous silicon film doped with Cr(III) ions (2018)
Salcedo, Walter Jaimes ; Braga, Mauro Sergio; Jaimes, Ruth Flavia Vera Villamil
Source: Journal of Luminescence. Unidade: EP
Subjects: SILÍCIO, FOTOLUMINESCÊNCIA, ÍONS ELETRÔNICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SALCEDO, Walter Jaimes e BRAGA, Mauro Sergio e JAIMES, Ruth Flavia Vera Villamil. Huge enhancement of photoluminescence emission from porous silicon film doped with Cr(III) ions. Journal of Luminescence, p. 109-111, 2018Tradução . . Disponível em: https://doi.org/10.1016/j.jlumin.2018.03.027. Acesso em: 27 set. 2024.
APA
Salcedo, W. J., Braga, M. S., & Jaimes, R. F. V. V. (2018). Huge enhancement of photoluminescence emission from porous silicon film doped with Cr(III) ions. Journal of Luminescence, 109-111. doi:10.1016/j.jlumin.2018.03.027
NLM
Salcedo WJ, Braga MS, Jaimes RFVV. Huge enhancement of photoluminescence emission from porous silicon film doped with Cr(III) ions [Internet]. Journal of Luminescence. 2018 ; 109-111.[citado 2024 set. 27 ] Available from: https://doi.org/10.1016/j.jlumin.2018.03.027
Vancouver
Salcedo WJ, Braga MS, Jaimes RFVV. Huge enhancement of photoluminescence emission from porous silicon film doped with Cr(III) ions [Internet]. Journal of Luminescence. 2018 ; 109-111.[citado 2024 set. 27 ] Available from: https://doi.org/10.1016/j.jlumin.2018.03.027
Artigo de periodico
Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes (2016)
Oliveira, Alberto Vinicius de; Simoen, Eddy ; Mitard Jerome; Agopian, Paula Ghedini Der ; Langer, Robert; Witters, Liesbeth J; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: MICROELETRÔNICA, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OLIVEIRA, Alberto Vinicius de et al. Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes. IEEE Transactions on Electron Devices, v. 63, n. 10, p. 4031-4037, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2598288. Acesso em: 27 set. 2024.
APA
Oliveira, A. V. de, Simoen, E., Mitard Jerome,, Agopian, P. G. D., Langer, R., Witters, L. J., & Martino, J. A. (2016). Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes. IEEE Transactions on Electron Devices, 63( 10), 4031-4037. doi:10.1109/ted.2016.2598288
NLM
Oliveira AV de, Simoen E, Mitard Jerome, Agopian PGD, Langer R, Witters LJ, Martino JA. Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 10): 4031-4037.[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/ted.2016.2598288
Vancouver
Oliveira AV de, Simoen E, Mitard Jerome, Agopian PGD, Langer R, Witters LJ, Martino JA. Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 10): 4031-4037.[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/ted.2016.2598288
Artigo de periodico
Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature (2016)
Pavanello, Marcelo Antonio ; Souza, Michelly de; Ribeiro, Thales Augusto; Martino, João Antonio ; Flandre, Denis
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: SILÍCIO, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio et al. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature. Semiconductor Science and Technology, v. 31, n. 11, p. 114005, 2016Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/31/11/114005. Acesso em: 27 set. 2024.
APA
Pavanello, M. A., Souza, M. de, Ribeiro, T. A., Martino, J. A., & Flandre, D. (2016). Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature. Semiconductor Science and Technology, 31( 11), 114005. doi:10.1088/0268-1242/31/11/114005
NLM
Pavanello MA, Souza M de, Ribeiro TA, Martino JA, Flandre D. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature [Internet]. Semiconductor Science and Technology. 2016 ; 31( 11): 114005.[citado 2024 set. 27 ] Available from: https://doi.org/10.1088/0268-1242/31/11/114005
Vancouver
Pavanello MA, Souza M de, Ribeiro TA, Martino JA, Flandre D. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature [Internet]. Semiconductor Science and Technology. 2016 ; 31( 11): 114005.[citado 2024 set. 27 ] Available from: https://doi.org/10.1088/0268-1242/31/11/114005
Artigo de periodico
GR-Noise Characterization of Ge pFinFETs With STI First and STI Last Processes (2016)
Oliveira, Alberto Vinicius de; Simoen, Eddy ; Mitard, Jerome; Agopian, Paula Ghedini Der ; Langer, Robert; Witters, Liesbeth J; Martino, João Antonio
Source: IEEE Electron Device Letters. Unidade: EP
Subjects: SEMICONDUTORES, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OLIVEIRA, Alberto Vinicius de et al. GR-Noise Characterization of Ge pFinFETs With STI First and STI Last Processes. IEEE Electron Device Letters, v. 37, n. 9, p. 1092-1095, 2016Tradução . . Disponível em: https://doi.org/10.1109/led.2016.2595398. Acesso em: 27 set. 2024.
APA
Oliveira, A. V. de, Simoen, E., Mitard, J., Agopian, P. G. D., Langer, R., Witters, L. J., & Martino, J. A. (2016). GR-Noise Characterization of Ge pFinFETs With STI First and STI Last Processes. IEEE Electron Device Letters, 37( 9), 1092-1095. doi:10.1109/led.2016.2595398
NLM
Oliveira AV de, Simoen E, Mitard J, Agopian PGD, Langer R, Witters LJ, Martino JA. GR-Noise Characterization of Ge pFinFETs With STI First and STI Last Processes [Internet]. IEEE Electron Device Letters. 2016 ; 37( 9): 1092-1095.[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/led.2016.2595398
Vancouver
Oliveira AV de, Simoen E, Mitard J, Agopian PGD, Langer R, Witters LJ, Martino JA. GR-Noise Characterization of Ge pFinFETs With STI First and STI Last Processes [Internet]. IEEE Electron Device Letters. 2016 ; 37( 9): 1092-1095.[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/led.2016.2595398
Artigo de periodico
Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective (2016)
Bordallo, Caio Cesar Mendes ; Claeys, Cor ; Thean, Aaron; Simoen, Eddy ; Vandooren, A; Rooyackers, Rita; Agopian, Paula Ghedini Der ; Sivieri, Victor de Bodt; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: TRANSISTORES, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BORDALLO, Caio Cesar Mendes et al. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective. IEEE Transactions on Electron Devices, v. 63, n. 7, p. 2930-2935, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2559580. Acesso em: 27 set. 2024.
APA
Bordallo, C. C. M., Claeys, C., Thean, A., Simoen, E., Vandooren, A., Rooyackers, R., et al. (2016). Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective. IEEE Transactions on Electron Devices, 63( 7), 2930-2935. doi:10.1109/ted.2016.2559580
NLM
Bordallo CCM, Claeys C, Thean A, Simoen E, Vandooren A, Rooyackers R, Agopian PGD, Sivieri V de B, Martino JA. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 7): 2930-2935.[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/ted.2016.2559580
Vancouver
Bordallo CCM, Claeys C, Thean A, Simoen E, Vandooren A, Rooyackers R, Agopian PGD, Sivieri V de B, Martino JA. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 7): 2930-2935.[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/ted.2016.2559580
Artigo de periodico
Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices (2015)
Machado, Wanda Valle Marcondes; Assali, L. V. C. ; Justo Filho, João Francisco
Source: Journal of Applied Physics. Unidade: EP
Subjects: ELETROMAGNETISMO, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MACHADO, Wanda Valle Marcondes e ASSALI, L. V. C. e JUSTO FILHO, João Francisco. Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices. Journal of Applied Physics, v. 118, n. 4, p. 045704, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4927293. Acesso em: 27 set. 2024.
APA
Machado, W. V. M., Assali, L. V. C., & Justo Filho, J. F. (2015). Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices. Journal of Applied Physics, 118( 4), 045704. doi:10.1063/1.4927293
NLM
Machado WVM, Assali LVC, Justo Filho JF. Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices [Internet]. Journal of Applied Physics. 2015 ; 118( 4): 045704.[citado 2024 set. 27 ] Available from: https://doi.org/10.1063/1.4927293
Vancouver
Machado WVM, Assali LVC, Justo Filho JF. Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices [Internet]. Journal of Applied Physics. 2015 ; 118( 4): 045704.[citado 2024 set. 27 ] Available from: https://doi.org/10.1063/1.4927293
Artigo de periodico
Optical characterization of one‐dimensional porous silicon photonic crystals with effective refractive index gradient in depth (2015)
Huanca, Danilo Roque ; Salcedo, Walter Jaimes
Source: Physica Status Solidi A Applications and Materials Science. Unidade: EP
Subjects: SILÍCIO, CORROSÃO DOS MATERIAIS, PROPRIEDADES ÓPTICAS DA SOLUÇÃO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HUANCA, Danilo Roque e SALCEDO, Walter Jaimes. Optical characterization of one‐dimensional porous silicon photonic crystals with effective refractive index gradient in depth. Physica Status Solidi A Applications and Materials Science, v. 212, p. 1975-1983, 2015Tradução . . Disponível em: https://doi.org/10.1002/pssa.201532063. Acesso em: 27 set. 2024.
APA
Huanca, D. R., & Salcedo, W. J. (2015). Optical characterization of one‐dimensional porous silicon photonic crystals with effective refractive index gradient in depth. Physica Status Solidi A Applications and Materials Science, 212, 1975-1983. doi:10.1002/pssa.201532063
NLM
Huanca DR, Salcedo WJ. Optical characterization of one‐dimensional porous silicon photonic crystals with effective refractive index gradient in depth [Internet]. Physica Status Solidi A Applications and Materials Science. 2015 ; 212 1975-1983.[citado 2024 set. 27 ] Available from: https://doi.org/10.1002/pssa.201532063
Vancouver
Huanca DR, Salcedo WJ. Optical characterization of one‐dimensional porous silicon photonic crystals with effective refractive index gradient in depth [Internet]. Physica Status Solidi A Applications and Materials Science. 2015 ; 212 1975-1983.[citado 2024 set. 27 ] Available from: https://doi.org/10.1002/pssa.201532063
Artigo de periodico
Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs (2015)
Agopian, Paula Ghedini Der ; Martino, João Antonio ; Santos, Sara Dereste dos; Rooyackers, Rita; Vandoren, A
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: MICROELETRÔNICA, TRANSISTORES, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AGOPIAN, Paula Ghedini Der et al. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs. IEEE Transactions on Electron Devices, v. 62, n. Ja 2015, p. 16-22, 2015Tradução . . Disponível em: https://doi.org/10.1109/ted.2014.2367659. Acesso em: 27 set. 2024.
APA
Agopian, P. G. D., Martino, J. A., Santos, S. D. dos, Rooyackers, R., & Vandoren, A. (2015). Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs. IEEE Transactions on Electron Devices, 62( Ja 2015), 16-22. doi:10.1109/ted.2014.2367659
NLM
Agopian PGD, Martino JA, Santos SD dos, Rooyackers R, Vandoren A. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs [Internet]. IEEE Transactions on Electron Devices. 2015 ; 62( Ja 2015): 16-22.[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/ted.2014.2367659
Vancouver
Agopian PGD, Martino JA, Santos SD dos, Rooyackers R, Vandoren A. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs [Internet]. IEEE Transactions on Electron Devices. 2015 ; 62( Ja 2015): 16-22.[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/ted.2014.2367659
Artigo de periodico
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation (2014)
Caño de Andrade, Maria Glória; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor ; Aoulaiche, Marc; Martino, João Antonio
Source: Microelectronics Reliability. Unidade: EP
Subjects: SILÍCIO, MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAÑO DE ANDRADE, Maria Glória et al. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectronics Reliability, v. 54, n. 11, p. 2349-2354, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2014.06.013. Acesso em: 27 set. 2024.
APA
Caño de Andrade, M. G., Collaert, N., Simoen, E., Claeys, C., Aoulaiche, M., & Martino, J. A. (2014). Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectronics Reliability, 54( 11), 2349-2354. doi:10.1016/j.microrel.2014.06.013
NLM
Caño de Andrade MG, Collaert N, Simoen E, Claeys C, Aoulaiche M, Martino JA. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation [Internet]. Microelectronics Reliability. 2014 ; 54( 11): 2349-2354.[citado 2024 set. 27 ] Available from: https://doi.org/10.1016/j.microrel.2014.06.013
Vancouver
Caño de Andrade MG, Collaert N, Simoen E, Claeys C, Aoulaiche M, Martino JA. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation [Internet]. Microelectronics Reliability. 2014 ; 54( 11): 2349-2354.[citado 2024 set. 27 ] Available from: https://doi.org/10.1016/j.microrel.2014.06.013
Artigo de periodico
Mesoporous silicon: a new route to fabricate silicon‐based nanotubes (2014)
Huanca, Danilo Roque ; Salcedo, Walter Jaimes
Source: Physica Status Solidi A Applications and Materials Science. Unidade: EP
Subjects: NANOTUBOS, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HUANCA, Danilo Roque e SALCEDO, Walter Jaimes. Mesoporous silicon: a new route to fabricate silicon‐based nanotubes. Physica Status Solidi A Applications and Materials Science, v. 211, n. 7, p. 1525-1530, 2014Tradução . . Disponível em: https://doi.org/10.1002/pssa.201330468. Acesso em: 27 set. 2024.
APA
Huanca, D. R., & Salcedo, W. J. (2014). Mesoporous silicon: a new route to fabricate silicon‐based nanotubes. Physica Status Solidi A Applications and Materials Science, 211( 7), 1525-1530. doi:10.1002/pssa.201330468
NLM
Huanca DR, Salcedo WJ. Mesoporous silicon: a new route to fabricate silicon‐based nanotubes [Internet]. Physica Status Solidi A Applications and Materials Science. 2014 ; 211( 7): 1525-1530.[citado 2024 set. 27 ] Available from: https://doi.org/10.1002/pssa.201330468
Vancouver
Huanca DR, Salcedo WJ. Mesoporous silicon: a new route to fabricate silicon‐based nanotubes [Internet]. Physica Status Solidi A Applications and Materials Science. 2014 ; 211( 7): 1525-1530.[citado 2024 set. 27 ] Available from: https://doi.org/10.1002/pssa.201330468
Artigo de periodico
Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics (2014)
Santos, Sara Dereste dos; Martino, João Antonio ; Cretu, B; Strobel, V; Routoure, J.-M; Carin, R; Aoulaiche, Marc; Jurczak, Malgorzata; Claeys, Cor
Source: Solid-State Electronics. Unidade: EP
Subjects: TEMPERATURA, MICROELETRÔNICA, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Sara Dereste dos et al. Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics. Solid-State Electronics, v. 97, p. 14-22, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2014.04.034. Acesso em: 27 set. 2024.
APA
Santos, S. D. dos, Martino, J. A., Cretu, B., Strobel, V., Routoure, J. -M., Carin, R., et al. (2014). Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics. Solid-State Electronics, 97, 14-22. doi:10.1016/j.sse.2014.04.034
NLM
Santos SD dos, Martino JA, Cretu B, Strobel V, Routoure J-M, Carin R, Aoulaiche M, Jurczak M, Claeys C. Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics [Internet]. Solid-State Electronics. 2014 ; 97 14-22.[citado 2024 set. 27 ] Available from: https://doi.org/10.1016/j.sse.2014.04.034
Vancouver
Santos SD dos, Martino JA, Cretu B, Strobel V, Routoure J-M, Carin R, Aoulaiche M, Jurczak M, Claeys C. Low-frequency noise assessment in advanced UTBOX SOI nMOSFETs with different gate dielectrics [Internet]. Solid-State Electronics. 2014 ; 97 14-22.[citado 2024 set. 27 ] Available from: https://doi.org/10.1016/j.sse.2014.04.034
Artigo de periodico
Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities (2013)
Simoen, Eddy ; Martino, João Antonio ; Aoulaiche, Marc; Santos, Sara Dereste dos; Strobel, V; Cretu, B; Routoure, J.-M; Carin, R; Rodriguez, Adriana Pinheiro Martinelli; Tejada, Julián; Claeys, Cor ; Rodriguez, A. Luque
Source: ECS Journal of Solid State Science and Technology. Unidade: EP
Subjects: SILÍCIO, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMOEN, Eddy et al. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities. ECS Journal of Solid State Science and Technology, v. 2, n. 11, p. Q205-Q210, 2013Tradução . . Disponível em: https://doi.org/10.1149/2.011311jss. Acesso em: 27 set. 2024.
APA
Simoen, E., Martino, J. A., Aoulaiche, M., Santos, S. D. dos, Strobel, V., Cretu, B., et al. (2013). Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities. ECS Journal of Solid State Science and Technology, 2( 11), Q205-Q210. doi:10.1149/2.011311jss
NLM
Simoen E, Martino JA, Aoulaiche M, Santos SD dos, Strobel V, Cretu B, Routoure J-M, Carin R, Rodriguez APM, Tejada J, Claeys C, Rodriguez AL. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities [Internet]. ECS Journal of Solid State Science and Technology. 2013 ; 2( 11): Q205-Q210.[citado 2024 set. 27 ] Available from: https://doi.org/10.1149/2.011311jss
Vancouver
Simoen E, Martino JA, Aoulaiche M, Santos SD dos, Strobel V, Cretu B, Routoure J-M, Carin R, Rodriguez APM, Tejada J, Claeys C, Rodriguez AL. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities [Internet]. ECS Journal of Solid State Science and Technology. 2013 ; 2( 11): Q205-Q210.[citado 2024 set. 27 ] Available from: https://doi.org/10.1149/2.011311jss
Artigo de periodico
Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices (2013)
Agopian, Paula Ghedini Der ; Bordallo, Caio Cesar Mendes ; Simoen, Eddy ; Martino, João Antonio ; Claeys, Cor
Source: Solid-State Electronics Volume 90, December 2013, Pages 155-159. Unidade: EP
Subjects: SILÍCIO, IRRADIAÇÃO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AGOPIAN, Paula Ghedini Der et al. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices. Solid-State Electronics Volume 90, December 2013, Pages 155-159, v. 90, p. 155-159, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2013.02.037. Acesso em: 27 set. 2024.
APA
Agopian, P. G. D., Bordallo, C. C. M., Simoen, E., Martino, J. A., & Claeys, C. (2013). Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices. Solid-State Electronics Volume 90, December 2013, Pages 155-159, 90, 155-159. doi:10.1016/j.sse.2013.02.037
NLM
Agopian PGD, Bordallo CCM, Simoen E, Martino JA, Claeys C. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices [Internet]. Solid-State Electronics Volume 90, December 2013, Pages 155-159. 2013 ; 90 155-159.[citado 2024 set. 27 ] Available from: https://doi.org/10.1016/j.sse.2013.02.037
Vancouver
Agopian PGD, Bordallo CCM, Simoen E, Martino JA, Claeys C. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices [Internet]. Solid-State Electronics Volume 90, December 2013, Pages 155-159. 2013 ; 90 155-159.[citado 2024 set. 27 ] Available from: https://doi.org/10.1016/j.sse.2013.02.037
Artigo de periodico
On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs (2013)
Santos, Sara Dereste dos; Nicoletti, Talitha; Martino, João Antonio ; Aoulaiche, Marc; Veloso, Anabela; Jurczak, Malgorzata; Simoen, Eddy ; Claeys, Cor
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: SILÍCIO, FILMES FINOS, AVALIAÇÃO DE DESEMPENHO, TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Sara Dereste dos et al. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs. IEEE Transactions on Electron Devices, v. 60, n. 1, p. 444-450, 2013Tradução . . Disponível em: https://doi.org/10.1109/ted.2012.2227749. Acesso em: 27 set. 2024.
APA
Santos, S. D. dos, Nicoletti, T., Martino, J. A., Aoulaiche, M., Veloso, A., Jurczak, M., et al. (2013). On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs. IEEE Transactions on Electron Devices, 60( 1), 444-450. doi:10.1109/ted.2012.2227749
NLM
Santos SD dos, Nicoletti T, Martino JA, Aoulaiche M, Veloso A, Jurczak M, Simoen E, Claeys C. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs [Internet]. IEEE Transactions on Electron Devices. 2013 ; 60( 1): 444-450.[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/ted.2012.2227749
Vancouver
Santos SD dos, Nicoletti T, Martino JA, Aoulaiche M, Veloso A, Jurczak M, Simoen E, Claeys C. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs [Internet]. IEEE Transactions on Electron Devices. 2013 ; 60( 1): 444-450.[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/ted.2012.2227749
Artigo de periodico
Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates (2013)
Doria, Rodrigo Trevisoli ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor ; Pavanello, Marcelo Antonio
Source: Solid-State Electronics. Unidade: EP
Assunto: SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DORIA, Rodrigo Trevisoli et al. Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates. Solid-State Electronics, v. 90, p. 121-126, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2013.02.042. Acesso em: 27 set. 2024.
APA
Doria, R. T., Martino, J. A., Simoen, E., Claeys, C., & Pavanello, M. A. (2013). Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates. Solid-State Electronics, 90, 121-126. doi:10.1016/j.sse.2013.02.042
NLM
Doria RT, Martino JA, Simoen E, Claeys C, Pavanello MA. Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates [Internet]. Solid-State Electronics. 2013 ; 90 121-126.[citado 2024 set. 27 ] Available from: https://doi.org/10.1016/j.sse.2013.02.042
Vancouver
Doria RT, Martino JA, Simoen E, Claeys C, Pavanello MA. Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates [Internet]. Solid-State Electronics. 2013 ; 90 121-126.[citado 2024 set. 27 ] Available from: https://doi.org/10.1016/j.sse.2013.02.042
Artigo de periodico
Nickel salt effect on macroporus silicon immersed in fluoride solution: from silicon microtubes to nickel microtubes (2010)
Huanca, Danilo Roque ; Kim, Hae Yong ; Elias, Vinícius F; Salcedo, Walter Jaimes
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Subjects: ELETROQUÍMICA, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HUANCA, Danilo Roque et al. Nickel salt effect on macroporus silicon immersed in fluoride solution: from silicon microtubes to nickel microtubes. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 295-303, 2010Tradução . . Acesso em: 27 set. 2024.
APA
Huanca, D. R., Kim, H. Y., Elias, V. F., & Salcedo, W. J. (2010). Nickel salt effect on macroporus silicon immersed in fluoride solution: from silicon microtubes to nickel microtubes. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 295-303.
NLM
Huanca DR, Kim HY, Elias VF, Salcedo WJ. Nickel salt effect on macroporus silicon immersed in fluoride solution: from silicon microtubes to nickel microtubes. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 295-303.[citado 2024 set. 27 ]
Vancouver
Huanca DR, Kim HY, Elias VF, Salcedo WJ. Nickel salt effect on macroporus silicon immersed in fluoride solution: from silicon microtubes to nickel microtubes. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 295-303.[citado 2024 set. 27 ]
Artigo de periodico
Silicon field-emission devices fabricated using the hydrogen implantation-porous silicon (HI-PS) micromachining technique (2008)
Dantas, Michel Oliveira da Silva; Galeazzo, Elisabete ; Peres, Henrique Estanislau Maldonado ; Kopelvski, Maycon Max ; Ramírez Fernandez, Francisco Javier
Source: Journal of Microelectrochemical Systems. Unidade: EP
Subjects: SEMICONDUTORES, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DANTAS, Michel Oliveira da Silva et al. Silicon field-emission devices fabricated using the hydrogen implantation-porous silicon (HI-PS) micromachining technique. Journal of Microelectrochemical Systems, v. 17, n. 5, p. 1263-1269, 2008Tradução . . Disponível em: https://doi.org/10.1109/JMEMS.2008.927743. Acesso em: 27 set. 2024.
APA
Dantas, M. O. da S., Galeazzo, E., Peres, H. E. M., Kopelvski, M. M., & Ramírez Fernandez, F. J. (2008). Silicon field-emission devices fabricated using the hydrogen implantation-porous silicon (HI-PS) micromachining technique. Journal of Microelectrochemical Systems, 17( 5), 1263-1269. doi:10.1109/JMEMS.2008.927743
NLM
Dantas MO da S, Galeazzo E, Peres HEM, Kopelvski MM, Ramírez Fernandez FJ. Silicon field-emission devices fabricated using the hydrogen implantation-porous silicon (HI-PS) micromachining technique [Internet]. Journal of Microelectrochemical Systems. 2008 ; 17( 5): 1263-1269.[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/JMEMS.2008.927743
Vancouver
Dantas MO da S, Galeazzo E, Peres HEM, Kopelvski MM, Ramírez Fernandez FJ. Silicon field-emission devices fabricated using the hydrogen implantation-porous silicon (HI-PS) micromachining technique [Internet]. Journal of Microelectrochemical Systems. 2008 ; 17( 5): 1263-1269.[citado 2024 set. 27 ] Available from: https://doi.org/10.1109/JMEMS.2008.927743

USP Schools

ReP

Filtros

Authors

USP affiliated authors

Date published

Subjects

Source title

Publisher

Conference titles