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Artigo de periodico
Study of ISFET for KCl sensing (2024)
Duarte, Pedro Henrique; Rangel, Ricardo Cardoso; Sasaki, Kátia Regina Akemi ; Martino, João Antonio
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, PERÓXIDO DE HIDROGÊNIO, SENSORES BIOMÉDICOS
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ABNT
DUARTE, Pedro Henrique et al. Study of ISFET for KCl sensing. Solid State Electronics, v. 219, p. 1-5, 2024Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2024.108974. Acesso em: 16 out. 2024.
APA
Duarte, P. H., Rangel, R. C., Sasaki, K. R. A., & Martino, J. A. (2024). Study of ISFET for KCl sensing. Solid State Electronics, 219, 1-5. doi:10.1016/j.sse.2024.108974
NLM
Duarte PH, Rangel RC, Sasaki KRA, Martino JA. Study of ISFET for KCl sensing [Internet]. Solid State Electronics. 2024 ; 219 1-5.[citado 2024 out. 16 ] Available from: https://doi.org/10.1016/j.sse.2024.108974
Vancouver
Duarte PH, Rangel RC, Sasaki KRA, Martino JA. Study of ISFET for KCl sensing [Internet]. Solid State Electronics. 2024 ; 219 1-5.[citado 2024 out. 16 ] Available from: https://doi.org/10.1016/j.sse.2024.108974
Artigo de periodico
Impact of ionic species on the performance of PEDOT:PSS-based organic electrochemical transistors (2024)
Colucci, Renan ; Feitosa, Bianca de Andrade ; Faria, Gregório Couto
Source: Advanced Electronic Materials. Unidades: IFSC, EESC
Subjects: TRANSISTORES, MATERIAIS ELETRÔNICOS, ELETROQUÍMICA ORGÂNICA, POLÍMEROS (QUÍMICA ORGÂNICA)
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ABNT
COLUCCI, Renan e FEITOSA, Bianca de Andrade e FARIA, Gregório Couto. Impact of ionic species on the performance of PEDOT:PSS-based organic electrochemical transistors. Advanced Electronic Materials, v. 10, n. 2, p. 2300235-1-2300235-8 + supporting information, 2024Tradução . . Disponível em: https://doi.org/10.1002/aelm.202300235. Acesso em: 16 out. 2024.
APA
Colucci, R., Feitosa, B. de A., & Faria, G. C. (2024). Impact of ionic species on the performance of PEDOT:PSS-based organic electrochemical transistors. Advanced Electronic Materials, 10( 2), 2300235-1-2300235-8 + supporting information. doi:10.1002/aelm.202300235
NLM
Colucci R, Feitosa B de A, Faria GC. Impact of ionic species on the performance of PEDOT:PSS-based organic electrochemical transistors [Internet]. Advanced Electronic Materials. 2024 ; 10( 2): 2300235-1-2300235-8 + supporting information.[citado 2024 out. 16 ] Available from: https://doi.org/10.1002/aelm.202300235
Vancouver
Colucci R, Feitosa B de A, Faria GC. Impact of ionic species on the performance of PEDOT:PSS-based organic electrochemical transistors [Internet]. Advanced Electronic Materials. 2024 ; 10( 2): 2300235-1-2300235-8 + supporting information.[citado 2024 out. 16 ] Available from: https://doi.org/10.1002/aelm.202300235
Tese (Doutorado)
Modelo eletroquímico termodinâmico (e-OECT) para transistores orgânicos eletroquímicos (2024)
Feitosa, Bianca de Andrade ; Faria, Gregório Couto (Orientador)
Unidade: EESC
Subjects: POLÍMEROS (MATERIAIS), TRANSISTORES, ELETROQUÍMICA
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ABNT
FEITOSA, Bianca de Andrade. Modelo eletroquímico termodinâmico (e-OECT) para transistores orgânicos eletroquímicos. 2024. Tese (Doutorado) – Universidade de São Paulo, São Carlos, 2024. Disponível em: https://www.teses.usp.br/teses/disponiveis/18/18158/tde-29042024-141636/. Acesso em: 16 out. 2024.
APA
Feitosa, B. de A. (2024). Modelo eletroquímico termodinâmico (e-OECT) para transistores orgânicos eletroquímicos (Tese (Doutorado). Universidade de São Paulo, São Carlos. Recuperado de https://www.teses.usp.br/teses/disponiveis/18/18158/tde-29042024-141636/
NLM
Feitosa B de A. Modelo eletroquímico termodinâmico (e-OECT) para transistores orgânicos eletroquímicos [Internet]. 2024 ;[citado 2024 out. 16 ] Available from: https://www.teses.usp.br/teses/disponiveis/18/18158/tde-29042024-141636/
Vancouver
Feitosa B de A. Modelo eletroquímico termodinâmico (e-OECT) para transistores orgânicos eletroquímicos [Internet]. 2024 ;[citado 2024 out. 16 ] Available from: https://www.teses.usp.br/teses/disponiveis/18/18158/tde-29042024-141636/
Artigo de periodico
Guidelines on measuring volumetric capacitance in organic electrochemical transistors (2024)
Luginieski, Marcos ; Torres, Bruno Bassi Millan ; Faria, Gregório Couto
Source: ACS Applied Electronic Materials. Unidade: IFSC
Subjects: ELETROQUÍMICA, TRANSISTORES, POLÍMEROS (MATERIAIS)
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ABNT
LUGINIESKI, Marcos e TORRES, Bruno Bassi Millan e FARIA, Gregório Couto. Guidelines on measuring volumetric capacitance in organic electrochemical transistors. ACS Applied Electronic Materials, v. 6, n. 4, p. 2225-2231 + supporting information: S1-S10, 2024Tradução . . Disponível em: https://doi.org/10.1021/acsaelm.3c01673. Acesso em: 16 out. 2024.
APA
Luginieski, M., Torres, B. B. M., & Faria, G. C. (2024). Guidelines on measuring volumetric capacitance in organic electrochemical transistors. ACS Applied Electronic Materials, 6( 4), 2225-2231 + supporting information: S1-S10. doi:10.1021/acsaelm.3c01673
NLM
Luginieski M, Torres BBM, Faria GC. Guidelines on measuring volumetric capacitance in organic electrochemical transistors [Internet]. ACS Applied Electronic Materials. 2024 ; 6( 4): 2225-2231 + supporting information: S1-S10.[citado 2024 out. 16 ] Available from: https://doi.org/10.1021/acsaelm.3c01673
Vancouver
Luginieski M, Torres BBM, Faria GC. Guidelines on measuring volumetric capacitance in organic electrochemical transistors [Internet]. ACS Applied Electronic Materials. 2024 ; 6( 4): 2225-2231 + supporting information: S1-S10.[citado 2024 out. 16 ] Available from: https://doi.org/10.1021/acsaelm.3c01673
Artigo de periodico
Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies (2023)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: CIRCUITOS ANALÓGICOS, TRANSISTORES
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ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies. Semiconductor Science and Technology, v. 38, n. 9, p. 1-12, 2023Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/aceb84. Acesso em: 16 out. 2024.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2023). Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies. Semiconductor Science and Technology, 38( 9), 1-12. doi:10.1088/1361-6641/aceb84
NLM
Toledo R do N, Martino JA, Agopian PGD. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies [Internet]. Semiconductor Science and Technology. 2023 ; 38( 9): 1-12.[citado 2024 out. 16 ] Available from: https://doi.org/10.1088/1361-6641/aceb84
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies [Internet]. Semiconductor Science and Technology. 2023 ; 38( 9): 1-12.[citado 2024 out. 16 ] Available from: https://doi.org/10.1088/1361-6641/aceb84
Artigo de periodico
Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis (2023)
Silva, Wenita de Lima; Toledo, Rodrigo do Nascimento; Gonçalez Filho, Walter; Nogueira, Alexandro de Moraes; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, NANOTECNOLOGIA
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ABNT
SILVA, Wenita de Lima et al. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis. Solid State Electronics, v. 202, p. 1-8, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108611. Acesso em: 16 out. 2024.
APA
Silva, W. de L., Toledo, R. do N., Gonçalez Filho, W., Nogueira, A. de M., Agopian, P. G. D., & Martino, J. A. (2023). Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis. Solid State Electronics, 202, 1-8. doi:10.1016/j.sse.2023.108611
NLM
Silva W de L, Toledo R do N, Gonçalez Filho W, Nogueira A de M, Agopian PGD, Martino JA. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis [Internet]. Solid State Electronics. 2023 ; 202 1-8.[citado 2024 out. 16 ] Available from: https://doi.org/10.1016/j.sse.2023.108611
Vancouver
Silva W de L, Toledo R do N, Gonçalez Filho W, Nogueira A de M, Agopian PGD, Martino JA. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis [Internet]. Solid State Electronics. 2023 ; 202 1-8.[citado 2024 out. 16 ] Available from: https://doi.org/10.1016/j.sse.2023.108611
Trabalho de evento
Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs (2023)
Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, MICROELETRÔNICA, MATERIAIS NANOESTRUTURADOS
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ABNT
ARAÚJO, Gustavo Vinicius de e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302603. Acesso em: 16 out. 2024.
APA
Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2023). Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302603
NLM
Araújo GV de, Martino JA, Agopian PGD. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs [Internet]. SBMicro. 2023 ;[citado 2024 out. 16 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302603
Vancouver
Araújo GV de, Martino JA, Agopian PGD. Analysis of the trade-off between voltage gain and frequency response of OTA designed using experimental data of omega-gate nanowire SOI MOSFETs [Internet]. SBMicro. 2023 ;[citado 2024 out. 16 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302603
Artigo de periodico
Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications (2023)
Silva, V C P; Martino, João Antonio ; Simoen, Eddy ; Veloso, Anabela; Agopian, Paula Ghedini Der
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, TEMPERATURA, NANOTECNOLOGIA, CIRCUITOS ANALÓGICOS, CIRCUITOS DIGITAIS
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ABNT
SILVA, V C P et al. Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications. Solid State Electronics, v. 208, p. 1-5, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108729. Acesso em: 16 out. 2024.
APA
Silva, V. C. P., Martino, J. A., Simoen, E., Veloso, A., & Agopian, P. G. D. (2023). Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications. Solid State Electronics, 208, 1-5. doi:10.1016/j.sse.2023.108729
NLM
Silva VCP, Martino JA, Simoen E, Veloso A, Agopian PGD. Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications [Internet]. Solid State Electronics. 2023 ;208 1-5.[citado 2024 out. 16 ] Available from: https://doi.org/10.1016/j.sse.2023.108729
Vancouver
Silva VCP, Martino JA, Simoen E, Veloso A, Agopian PGD. Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications [Internet]. Solid State Electronics. 2023 ;208 1-5.[citado 2024 out. 16 ] Available from: https://doi.org/10.1016/j.sse.2023.108729
Artigo de periodico
Experimental study of MISHEMT from 450k down to 200 k for analog applications (2023)
Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, TEMPERATURA
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ABNT
PERINA, Welder Fernandes et al. Experimental study of MISHEMT from 450k down to 200 k for analog applications. Solid State Electronics, v. 208, p. 1-4, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108742. Acesso em: 16 out. 2024.
APA
Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Experimental study of MISHEMT from 450k down to 200 k for analog applications. Solid State Electronics, 208, 1-4. doi:10.1016/j.sse.2023.108742
NLM
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450k down to 200 k for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2024 out. 16 ] Available from: https://doi.org/10.1016/j.sse.2023.108742
Vancouver
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Experimental study of MISHEMT from 450k down to 200 k for analog applications [Internet]. Solid State Electronics. 2023 ; 208 1-4.[citado 2024 out. 16 ] Available from: https://doi.org/10.1016/j.sse.2023.108742
Trabalho de evento
Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET (2023)
Ramos, Daniel Augusto; Sasaki, Kátia Regina Akemi ; Rangel, Ricardo Cardoso; Duarte, Pedro Henrique; Martino, João Antonio
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: DISPOSITIVOS ELETRÔNICOS, TRANSISTORES, MICROELETRÔNICA
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ABNT
RAMOS, Daniel Augusto et al. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302644. Acesso em: 16 out. 2024.
APA
Ramos, D. A., Sasaki, K. R. A., Rangel, R. C., Duarte, P. H., & Martino, J. A. (2023). Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302644
NLM
Ramos DA, Sasaki KRA, Rangel RC, Duarte PH, Martino JA. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET [Internet]. SBMicro. 2023 ;[citado 2024 out. 16 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302644
Vancouver
Ramos DA, Sasaki KRA, Rangel RC, Duarte PH, Martino JA. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET [Internet]. SBMicro. 2023 ;[citado 2024 out. 16 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302644
Trabalho de evento
Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K (2023)
Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: TRANSISTORES, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PERINA, Welder Fernandes et al. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302604. Acesso em: 16 out. 2024.
APA
Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302604
NLM
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 out. 16 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604
Vancouver
Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 out. 16 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604
Trabalho de evento
Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET (2023)
Ribeiro, Arllen D.R; Araújo, Gustavo Vinicius de; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: DISPOSITIVOS ELETRÔNICOS, TRANSISTORES, MICROELETRÔNICA
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ABNT
RIBEIRO, Arllen D.R et al. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302575. Acesso em: 16 out. 2024.
APA
Ribeiro, A. D. R., Araújo, G. V. de, Martino, J. A., & Agopian, P. G. D. (2023). Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302575
NLM
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2024 out. 16 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575
Vancouver
Ribeiro ADR, Araújo GV de, Martino JA, Agopian PGD. Trade-off between channel length and mechanical stress in the operational transconductance amplifier designed with SOI FinFET [Internet]. SBMicro. 2023 ;[citado 2024 out. 16 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302575
Artigo de periodico
MISHEMT intrinsic voltage gain under multiple channel output characteristics (2023)
Canales, Bruno Godoy; Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der
Source: Semiconductor Science and Technology. Unidade: EP
Subjects: TRANSISTORES, SEMICONDUTORES
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ABNT
CANALES, Bruno Godoy et al. MISHEMT intrinsic voltage gain under multiple channel output characteristics. Semiconductor Science and Technology, v. 38, n. 11, p. 1-6, 2023Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/acfa1f. Acesso em: 16 out. 2024.
APA
Canales, B. G., Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). MISHEMT intrinsic voltage gain under multiple channel output characteristics. Semiconductor Science and Technology, 38( 11), 1-6. doi:10.1088/1361-6641/acfa1f
NLM
Canales BG, Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. MISHEMT intrinsic voltage gain under multiple channel output characteristics [Internet]. Semiconductor Science and Technology. 2023 ; 38( 11): 1-6.[citado 2024 out. 16 ] Available from: https://doi.org/10.1088/1361-6641/acfa1f
Vancouver
Canales BG, Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. MISHEMT intrinsic voltage gain under multiple channel output characteristics [Internet]. Semiconductor Science and Technology. 2023 ; 38( 11): 1-6.[citado 2024 out. 16 ] Available from: https://doi.org/10.1088/1361-6641/acfa1f
Trabalho de evento-resumo
Unraveling fundamentals on organic electrochemical transistors through thermodynamics principles (2023)
Feitosa, Bianca de Andrade; Torres, Bruno Bassi Millan ; Coutinho, Douglas José ; Faria, Gregório Couto
Source: Program. Conference titles: Brazil MRS Meeting. Unidades: IFSC, EESC
Subjects: TRANSISTORES, MATERIAIS ELETRÔNICOS, ELETROQUÍMICA ORGÂNICA, POLÍMEROS (QUÍMICA ORGÂNICA)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FEITOSA, Bianca de Andrade et al. Unraveling fundamentals on organic electrochemical transistors through thermodynamics principles. 2023, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2023. Disponível em: https://repositorio.usp.br/directbitstream/7780681f-4543-4020-9bbc-b4a20e5afc15/3158862.pdf. Acesso em: 16 out. 2024.
APA
Feitosa, B. de A., Torres, B. B. M., Coutinho, D. J., & Faria, G. C. (2023). Unraveling fundamentals on organic electrochemical transistors through thermodynamics principles. In Program. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. Recuperado de https://repositorio.usp.br/directbitstream/7780681f-4543-4020-9bbc-b4a20e5afc15/3158862.pdf
NLM
Feitosa B de A, Torres BBM, Coutinho DJ, Faria GC. Unraveling fundamentals on organic electrochemical transistors through thermodynamics principles [Internet]. Program. 2023 ;[citado 2024 out. 16 ] Available from: https://repositorio.usp.br/directbitstream/7780681f-4543-4020-9bbc-b4a20e5afc15/3158862.pdf
Vancouver
Feitosa B de A, Torres BBM, Coutinho DJ, Faria GC. Unraveling fundamentals on organic electrochemical transistors through thermodynamics principles [Internet]. Program. 2023 ;[citado 2024 out. 16 ] Available from: https://repositorio.usp.br/directbitstream/7780681f-4543-4020-9bbc-b4a20e5afc15/3158862.pdf
Trabalho de evento-resumo
Mapping the electric field within polymeric transistors by sum-frequency generation microscopy (2023)
Sousa, Marcos da Silva; Miranda, Paulo Barbeitas
Source: Program. Conference titles: Brazil MRS Meeting. Unidade: IFSC
Subjects: TRANSISTORES, ESPECTROSCOPIA, ÓPTICA NÃO LINEAR
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ABNT
SOUSA, Marcos da Silva e MIRANDA, Paulo Barbeitas. Mapping the electric field within polymeric transistors by sum-frequency generation microscopy. 2023, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2023. Disponível em: https://repositorio.usp.br/directbitstream/08be3892-cf9b-46f5-ad91-e3597c23fe32/3159767.pdf. Acesso em: 16 out. 2024.
APA
Sousa, M. da S., & Miranda, P. B. (2023). Mapping the electric field within polymeric transistors by sum-frequency generation microscopy. In Program. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. Recuperado de https://repositorio.usp.br/directbitstream/08be3892-cf9b-46f5-ad91-e3597c23fe32/3159767.pdf
NLM
Sousa M da S, Miranda PB. Mapping the electric field within polymeric transistors by sum-frequency generation microscopy [Internet]. Program. 2023 ;[citado 2024 out. 16 ] Available from: https://repositorio.usp.br/directbitstream/08be3892-cf9b-46f5-ad91-e3597c23fe32/3159767.pdf
Vancouver
Sousa M da S, Miranda PB. Mapping the electric field within polymeric transistors by sum-frequency generation microscopy [Internet]. Program. 2023 ;[citado 2024 out. 16 ] Available from: https://repositorio.usp.br/directbitstream/08be3892-cf9b-46f5-ad91-e3597c23fe32/3159767.pdf
Trabalho de evento-resumo
Changes observed on performance and parameters extracted from electrolyte-gated transistors dependent on gate voltage (2023)
Seidel, Keli Fabiana; Lucas Junior, Hélio José; Patrzyk, Jéssica Nayara; Luginieski, Marcos ; Serbena, José Pedro Mansueto
Source: Program. Conference titles: Brazil MRS Meeting. Unidade: IFSC
Subjects: ELETROQUÍMICA, SEMICONDUTORES, TRANSISTORES, FÍSICA TEÓRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SEIDEL, Keli Fabiana et al. Changes observed on performance and parameters extracted from electrolyte-gated transistors dependent on gate voltage. 2023, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2023. Disponível em: https://repositorio.usp.br/directbitstream/b77c2254-e966-45ed-9e08-13fdbefed36d/3159689.pdf. Acesso em: 16 out. 2024.
APA
Seidel, K. F., Lucas Junior, H. J., Patrzyk, J. N., Luginieski, M., & Serbena, J. P. M. (2023). Changes observed on performance and parameters extracted from electrolyte-gated transistors dependent on gate voltage. In Program. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. Recuperado de https://repositorio.usp.br/directbitstream/b77c2254-e966-45ed-9e08-13fdbefed36d/3159689.pdf
NLM
Seidel KF, Lucas Junior HJ, Patrzyk JN, Luginieski M, Serbena JPM. Changes observed on performance and parameters extracted from electrolyte-gated transistors dependent on gate voltage [Internet]. Program. 2023 ;[citado 2024 out. 16 ] Available from: https://repositorio.usp.br/directbitstream/b77c2254-e966-45ed-9e08-13fdbefed36d/3159689.pdf
Vancouver
Seidel KF, Lucas Junior HJ, Patrzyk JN, Luginieski M, Serbena JPM. Changes observed on performance and parameters extracted from electrolyte-gated transistors dependent on gate voltage [Internet]. Program. 2023 ;[citado 2024 out. 16 ] Available from: https://repositorio.usp.br/directbitstream/b77c2254-e966-45ed-9e08-13fdbefed36d/3159689.pdf
Artigo de periodico
Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data (2023)
Toledo, Rodrigo do Nascimento; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Journal of Integrated Circuits and Systems. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TOLEDO, Rodrigo do Nascimento e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data. Journal of Integrated Circuits and Systems, v. 18, n. 1, p. 1-6, 2023Tradução . . Disponível em: https://doi.org/10.29292/jics.v18i1.653. Acesso em: 16 out. 2024.
APA
Toledo, R. do N., Martino, J. A., & Agopian, P. G. D. (2023). Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data. Journal of Integrated Circuits and Systems, 18( 1), 1-6. doi:10.29292/jics.v18il.653
NLM
Toledo R do N, Martino JA, Agopian PGD. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data [Internet]. Journal of Integrated Circuits and Systems. 2023 ;18( 1): 1-6.[citado 2024 out. 16 ] Available from: https://doi.org/10.29292/jics.v18i1.653
Vancouver
Toledo R do N, Martino JA, Agopian PGD. Low-dropout voltage regulator designed with nanowire TFET with different source composition experimental data [Internet]. Journal of Integrated Circuits and Systems. 2023 ;18( 1): 1-6.[citado 2024 out. 16 ] Available from: https://doi.org/10.29292/jics.v18i1.653
Trabalho de evento
Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors (2023)
Souto, Rayana Carvalho de Barros; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP
Subjects: TRANSISTORES, MICROELETRÔNICA, MATERIAIS NANOESTRUTURADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SOUTO, Rayana Carvalho de Barros e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors. 2023, Anais.. [Piscataway]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302596. Acesso em: 16 out. 2024.
APA
Souto, R. C. de B., Martino, J. A., & Agopian, P. G. D. (2023). Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors. In SBMicro. [Piscataway]: IEEE. doi:10.1109/SBMicro60499.2023.10302596
NLM
Souto RC de B, Martino JA, Agopian PGD. Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors [Internet]. SBMicro. 2023 ;[citado 2024 out. 16 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302596
Vancouver
Souto RC de B, Martino JA, Agopian PGD. Analysis of low-dropout voltage regulator designed with gate-all-around nanosheet transistors [Internet]. SBMicro. 2023 ;[citado 2024 out. 16 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302596
Trabalho de evento-resumo
Volumetric capacitance in organic electrochemical transistors: fundamentals and guidelines on how to correctly measure it experimentally (2023)
Luginieski, Marcos ; Faria, Gregório Couto
Source: Program. Conference titles: Brazil MRS Meeting. Unidade: IFSC
Subjects: ELETROQUÍMICA, SEMICONDUTORES, TRANSISTORES, ESPECTROSCOPIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LUGINIESKI, Marcos e FARIA, Gregório Couto. Volumetric capacitance in organic electrochemical transistors: fundamentals and guidelines on how to correctly measure it experimentally. 2023, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2023. Disponível em: https://repositorio.usp.br/directbitstream/8b15d49d-0192-47b7-b986-527d7a33eebd/3158833.pdf. Acesso em: 16 out. 2024.
APA
Luginieski, M., & Faria, G. C. (2023). Volumetric capacitance in organic electrochemical transistors: fundamentals and guidelines on how to correctly measure it experimentally. In Program. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. Recuperado de https://repositorio.usp.br/directbitstream/8b15d49d-0192-47b7-b986-527d7a33eebd/3158833.pdf
NLM
Luginieski M, Faria GC. Volumetric capacitance in organic electrochemical transistors: fundamentals and guidelines on how to correctly measure it experimentally [Internet]. Program. 2023 ;[citado 2024 out. 16 ] Available from: https://repositorio.usp.br/directbitstream/8b15d49d-0192-47b7-b986-527d7a33eebd/3158833.pdf
Vancouver
Luginieski M, Faria GC. Volumetric capacitance in organic electrochemical transistors: fundamentals and guidelines on how to correctly measure it experimentally [Internet]. Program. 2023 ;[citado 2024 out. 16 ] Available from: https://repositorio.usp.br/directbitstream/8b15d49d-0192-47b7-b986-527d7a33eebd/3158833.pdf
Trabalho de evento-resumo
Understanding fundamental processes in Organic Electrochemical Devices: a thermodynamic approach (2022)
Torres, Bruno Bassi Millan ; Feitosa, Bianca de Andrade; Coutinho, Douglas José; Faria, Gregório Couto
Source: Program. Conference titles: Brazil MRS Meeting. Unidades: IFSC, EESC
Subjects: ELETROQUÍMICA ORGÂNICA, TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TORRES, Bruno Bassi Millan et al. Understanding fundamental processes in Organic Electrochemical Devices: a thermodynamic approach. 2022, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2022. Disponível em: https://repositorio.usp.br/directbitstream/ffae00a7-2683-4acb-9e18-934ec134f49c/3098492.pdf. Acesso em: 16 out. 2024.
APA
Torres, B. B. M., Feitosa, B. de A., Coutinho, D. J., & Faria, G. C. (2022). Understanding fundamental processes in Organic Electrochemical Devices: a thermodynamic approach. In Program. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. Recuperado de https://repositorio.usp.br/directbitstream/ffae00a7-2683-4acb-9e18-934ec134f49c/3098492.pdf
NLM
Torres BBM, Feitosa B de A, Coutinho DJ, Faria GC. Understanding fundamental processes in Organic Electrochemical Devices: a thermodynamic approach [Internet]. Program. 2022 ;[citado 2024 out. 16 ] Available from: https://repositorio.usp.br/directbitstream/ffae00a7-2683-4acb-9e18-934ec134f49c/3098492.pdf
Vancouver
Torres BBM, Feitosa B de A, Coutinho DJ, Faria GC. Understanding fundamental processes in Organic Electrochemical Devices: a thermodynamic approach [Internet]. Program. 2022 ;[citado 2024 out. 16 ] Available from: https://repositorio.usp.br/directbitstream/ffae00a7-2683-4acb-9e18-934ec134f49c/3098492.pdf

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