Changes observed on performance and parameters extracted from electrolyte-gated transistors dependent on gate voltage (2023)
- Authors:
- Autor USP: LUGINIESKI, MARCOS - IFSC
- Unidade: IFSC
- Subjects: ELETROQUÍMICA; SEMICONDUTORES; TRANSISTORES; FÍSICA TEÓRICA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Pesquisa em Materiais - SBPMat
- Publisher place: Rio de Janeiro
- Date published: 2023
- Source:
- Título: Program
- Conference titles: Brazil MRS Meeting
-
ABNT
SEIDEL, Keli Fabiana et al. Changes observed on performance and parameters extracted from electrolyte-gated transistors dependent on gate voltage. 2023, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2023. Disponível em: https://repositorio.usp.br/directbitstream/b77c2254-e966-45ed-9e08-13fdbefed36d/3159689.pdf. Acesso em: 27 dez. 2025. -
APA
Seidel, K. F., Lucas Junior, H. J., Patrzyk, J. N., Luginieski, M., & Serbena, J. P. M. (2023). Changes observed on performance and parameters extracted from electrolyte-gated transistors dependent on gate voltage. In Program. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. Recuperado de https://repositorio.usp.br/directbitstream/b77c2254-e966-45ed-9e08-13fdbefed36d/3159689.pdf -
NLM
Seidel KF, Lucas Junior HJ, Patrzyk JN, Luginieski M, Serbena JPM. Changes observed on performance and parameters extracted from electrolyte-gated transistors dependent on gate voltage [Internet]. Program. 2023 ;[citado 2025 dez. 27 ] Available from: https://repositorio.usp.br/directbitstream/b77c2254-e966-45ed-9e08-13fdbefed36d/3159689.pdf -
Vancouver
Seidel KF, Lucas Junior HJ, Patrzyk JN, Luginieski M, Serbena JPM. Changes observed on performance and parameters extracted from electrolyte-gated transistors dependent on gate voltage [Internet]. Program. 2023 ;[citado 2025 dez. 27 ] Available from: https://repositorio.usp.br/directbitstream/b77c2254-e966-45ed-9e08-13fdbefed36d/3159689.pdf - General model for charge carriers transport in electrolyte-gated transistors
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