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Artigo de periodico
Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates (2005)
Martini, S; Quivy, A. A.; Lamas, T E; Silva, E C F da
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS, ESTRUTURA ELETRÔNICA
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ABNT
MARTINI, S et al. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates. Physical Review B, v. 72, n. 15, p. 153304/01-153304/04, 2005Tradução . . Disponível em: https://doi.org/10.1103/physrevb.72.153304. Acesso em: 04 nov. 2025.
APA
Martini, S., Quivy, A. A., Lamas, T. E., & Silva, E. C. F. da. (2005). Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates. Physical Review B, 72( 15), 153304/01-153304/04. doi:10.1103/physrevb.72.153304
NLM
Martini S, Quivy AA, Lamas TE, Silva ECF da. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates [Internet]. Physical Review B. 2005 ; 72( 15): 153304/01-153304/04.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1103/physrevb.72.153304
Vancouver
Martini S, Quivy AA, Lamas TE, Silva ECF da. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates [Internet]. Physical Review B. 2005 ; 72( 15): 153304/01-153304/04.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1103/physrevb.72.153304
Artigo de periodico
Morphological and optical properties of p-type GaAs(001) layers doped with silicon (2003)
Lamas, T. E.; Martini, S; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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ABNT
LAMAS, T. E. et al. Morphological and optical properties of p-type GaAs(001) layers doped with silicon. Microelectronics Journal, v. 34, n. 5-8, p. 701-703, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00106-x. Acesso em: 04 nov. 2025.
APA
Lamas, T. E., Martini, S., Silva, M. J. da, Quivy, A. A., & Leite, J. R. (2003). Morphological and optical properties of p-type GaAs(001) layers doped with silicon. Microelectronics Journal, 34( 5-8), 701-703. doi:10.1016/s0026-2692(03)00106-x
NLM
Lamas TE, Martini S, Silva MJ da, Quivy AA, Leite JR. Morphological and optical properties of p-type GaAs(001) layers doped with silicon [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 701-703.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/s0026-2692(03)00106-x
Vancouver
Lamas TE, Martini S, Silva MJ da, Quivy AA, Leite JR. Morphological and optical properties of p-type GaAs(001) layers doped with silicon [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 701-703.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/s0026-2692(03)00106-x
Artigo de periodico
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm (2003)
Silva, M J da; Martini, S; Lamas, T. E.; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Microelectronics Journal. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
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ABNT
SILVA, M J da et al. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, v. 34, n. 5-8, p. 631-633, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00066-1. Acesso em: 04 nov. 2025.
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm. Microelectronics Journal, 34( 5-8), 631-633. doi:10.1016/s0026-2692(03)00066-1
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/s0026-2692(03)00066-1
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm [Internet]. Microelectronics Journal. 2003 ; 34( 5-8): 631-633.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1016/s0026-2692(03)00066-1
Trabalho de evento-resumo
Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces (2003)
Quivy, A. A.; Martini, S; Lamas, T. E.; Silva, M. J. da; Silva, Euzi Conceicao Fernandes da
Source: Book of Abstract. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA
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ABNT
QUIVY, A. A. et al. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 04 nov. 2025.
APA
Quivy, A. A., Martini, S., Lamas, T. E., Silva, M. J. da, & Silva, E. C. F. da. (2003). Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. In Book of Abstract. Fortaleza: DF/UFC.
NLM
Quivy AA, Martini S, Lamas TE, Silva MJ da, Silva ECF da. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. Book of Abstract. 2003 ;[citado 2025 nov. 04 ]
Vancouver
Quivy AA, Martini S, Lamas TE, Silva MJ da, Silva ECF da. Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces. Book of Abstract. 2003 ;[citado 2025 nov. 04 ]
Trabalho de evento-resumo
Large InAs/GaAs quantum dots optically active in the long-wavelength region (2003)
Silva, M J da; Martini, S; Lamas, T. E.; Quivy, A. A.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
SILVA, M J da et al. Large InAs/GaAs quantum dots optically active in the long-wavelength region. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 04 nov. 2025.
APA
Silva, M. J. da, Martini, S., Lamas, T. E., Quivy, A. A., Silva, E. C. F. da, & Leite, J. R. (2003). Large InAs/GaAs quantum dots optically active in the long-wavelength region. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots optically active in the long-wavelength region. Book of Abstracts. 2003 ;[citado 2025 nov. 04 ]
Vancouver
Silva MJ da, Martini S, Lamas TE, Quivy AA, Silva ECF da, Leite JR. Large InAs/GaAs quantum dots optically active in the long-wavelength region. Book of Abstracts. 2003 ;[citado 2025 nov. 04 ]
Trabalho de evento-resumo
Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy (2003)
Lamas, T. E.; Quivy, A. A.; Martini, S; Silva, M J da; Leite, J. R.
Source: Book of Abstract. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LAMAS, T. E. et al. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 04 nov. 2025.
APA
Lamas, T. E., Quivy, A. A., Martini, S., Silva, M. J. da, & Leite, J. R. (2003). Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. In Book of Abstract. Fortaleza: DF/UFC.
NLM
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. Book of Abstract. 2003 ;[citado 2025 nov. 04 ]
Vancouver
Lamas TE, Quivy AA, Martini S, Silva MJ da, Leite JR. Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy. Book of Abstract. 2003 ;[citado 2025 nov. 04 ]
Artigo de periodico
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots (2003)
Duarte, C A; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; Silva, M J da; Martini, S; Leite, J. R.; Meneses, E A; Lauretto, E
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIFRAÇÃO POR RAIOS X, ÓPTICA, FOTOLUMINESCÊNCIA
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ABNT
DUARTE, C A et al. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, v. 93, n. 10, p. 6279-6283, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1568538. Acesso em: 04 nov. 2025.
APA
Duarte, C. A., Silva, E. C. F. da, Quivy, A. A., Silva, M. J. da, Martini, S., Leite, J. R., et al. (2003). Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, 93( 10), 6279-6283. doi:10.1063/1.1568538
NLM
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1568538
Vancouver
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1568538
Artigo de periodico
Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction (2003)
Martini, S; Quivy, A. A.; Silva, M J da; Lamas, T E; Silva, E C F da; Leite, J. R.; Abramof, E
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIFRAÇÃO POR RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINI, S et al. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction. Journal of Applied Physics, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1621738. Acesso em: 04 nov. 2025.
APA
Martini, S., Quivy, A. A., Silva, M. J. da, Lamas, T. E., Silva, E. C. F. da, Leite, J. R., & Abramof, E. (2003). Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction. Journal of Applied Physics. doi:10.1063/1.1621738
NLM
Martini S, Quivy AA, Silva MJ da, Lamas TE, Silva ECF da, Leite JR, Abramof E. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction [Internet]. Journal of Applied Physics. 2003 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1621738
Vancouver
Martini S, Quivy AA, Silva MJ da, Lamas TE, Silva ECF da, Leite JR, Abramof E. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction [Internet]. Journal of Applied Physics. 2003 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1621738
Artigo de periodico
Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix (2003)
Silva, M J da; Quivy, A. A.; Martini, S; Lamas, T. E.; Silva, Euzi Conceicao Fernandes da; Leite, J. R.
Source: Journal of Crystal Growth. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, SUPERCOMPUTADORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, M J da et al. Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix. Journal of Crystal Growth, v. 251, n. 1-4, p. 181-185, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20. Acesso em: 04 nov. 2025.
APA
Silva, M. J. da, Quivy, A. A., Martini, S., Lamas, T. E., Silva, E. C. F. da, & Leite, J. R. (2003). Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix. Journal of Crystal Growth, 251( 1-4), 181-185. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
NLM
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 181-185.[citado 2025 nov. 04 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Vancouver
Silva MJ da, Quivy AA, Martini S, Lamas TE, Silva ECF da, Leite JR. Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix [Internet]. Journal of Crystal Growth. 2003 ; 251( 1-4): 181-185.[citado 2025 nov. 04 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20

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