ReP USP - Resultado da busca

Trabalho de evento
Nitrogen antisite defect in zincblende-type boron nitride (1996)
Castineira, J L P; Leite, J. R.; Scolfaro, L M R; Enderlein, R; Alves, J L A; Kajaj, K K
Source: Anais. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
CASTINEIRA, J L P et al. Nitrogen antisite defect in zincblende-type boron nitride. 1996, Anais.. Singapore: World Scientific, 1996. . Acesso em: 07 set. 2024.
APA
Castineira, J. L. P., Leite, J. R., Scolfaro, L. M. R., Enderlein, R., Alves, J. L. A., & Kajaj, K. K. (1996). Nitrogen antisite defect in zincblende-type boron nitride. In Anais. Singapore: World Scientific.
NLM
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R, Alves JLA, Kajaj KK. Nitrogen antisite defect in zincblende-type boron nitride. Anais. 1996 ;[citado 2024 set. 07 ]
Vancouver
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R, Alves JLA, Kajaj KK. Nitrogen antisite defect in zincblende-type boron nitride. Anais. 1996 ;[citado 2024 set. 07 ]
Trabalho de evento
Investigation of the vertical transport in 'GA''AS'-'DELTA'-doping sls by raman studies of coupled plasmon phonon modes (1996)
Rodrigues, S C P; Scolfaro, L M R; Enderlein, R; Quivy, A. A.; Lima, A. P.; Leite, J. R.; Pusep, Yuri A.; Silva, S W; Silva, M T O; Galzerani, J C
Source: Anais. Conference titles: Internatuonal Conference on the Physics of Semiconductors. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
RODRIGUES, S C P et al. Investigation of the vertical transport in 'GA''AS'-'DELTA'-doping sls by raman studies of coupled plasmon phonon modes. 1996, Anais.. Singapore: World Scientific, 1996. . Acesso em: 07 set. 2024.
APA
Rodrigues, S. C. P., Scolfaro, L. M. R., Enderlein, R., Quivy, A. A., Lima, A. P., Leite, J. R., et al. (1996). Investigation of the vertical transport in 'GA''AS'-'DELTA'-doping sls by raman studies of coupled plasmon phonon modes. In Anais. Singapore: World Scientific.
NLM
Rodrigues SCP, Scolfaro LMR, Enderlein R, Quivy AA, Lima AP, Leite JR, Pusep YA, Silva SW, Silva MTO, Galzerani JC. Investigation of the vertical transport in 'GA''AS'-'DELTA'-doping sls by raman studies of coupled plasmon phonon modes. Anais. 1996 ;[citado 2024 set. 07 ]
Vancouver
Rodrigues SCP, Scolfaro LMR, Enderlein R, Quivy AA, Lima AP, Leite JR, Pusep YA, Silva SW, Silva MTO, Galzerani JC. Investigation of the vertical transport in 'GA''AS'-'DELTA'-doping sls by raman studies of coupled plasmon phonon modes. Anais. 1996 ;[citado 2024 set. 07 ]
Trabalho de evento
Total energy study of the epitaxialgrowth of cubic 'GA'n on 'SI'c (1996)
Teles, L. K.; Scolfaro, L M R; Enderlein, R; Leite, J. R.; Josiek, A; Schikora, D; Lischka, K
Source: Anais. Conference titles: International Conference on the Phisics of Semiconductors. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
TELES, L. K. et al. Total energy study of the epitaxialgrowth of cubic 'GA'n on 'SI'c. 1996, Anais.. Singapore: World Scientific, 1996. . Acesso em: 07 set. 2024.
APA
Teles, L. K., Scolfaro, L. M. R., Enderlein, R., Leite, J. R., Josiek, A., Schikora, D., & Lischka, K. (1996). Total energy study of the epitaxialgrowth of cubic 'GA'n on 'SI'c. In Anais. Singapore: World Scientific.
NLM
Teles LK, Scolfaro LMR, Enderlein R, Leite JR, Josiek A, Schikora D, Lischka K. Total energy study of the epitaxialgrowth of cubic 'GA'n on 'SI'c. Anais. 1996 ;[citado 2024 set. 07 ]
Vancouver
Teles LK, Scolfaro LMR, Enderlein R, Leite JR, Josiek A, Schikora D, Lischka K. Total energy study of the epitaxialgrowth of cubic 'GA'n on 'SI'c. Anais. 1996 ;[citado 2024 set. 07 ]
Trabalho de evento
Band structure of holes in p-'DELTA'-doping superlattices (1994)
Sipahi, Guilherme Matos; Enderlein, R; Scolfaro, L M R; Leite, J. R.
Source: Proceedings. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
SIPAHI, Guilherme Matos et al. Band structure of holes in p-'DELTA'-doping superlattices. 1994, Anais.. Vancouver: World Scientific, 1994. . Acesso em: 07 set. 2024.
APA
Sipahi, G. M., Enderlein, R., Scolfaro, L. M. R., & Leite, J. R. (1994). Band structure of holes in p-'DELTA'-doping superlattices. In Proceedings. Vancouver: World Scientific.
NLM
Sipahi GM, Enderlein R, Scolfaro LMR, Leite JR. Band structure of holes in p-'DELTA'-doping superlattices. Proceedings. 1994 ;[citado 2024 set. 07 ]
Vancouver
Sipahi GM, Enderlein R, Scolfaro LMR, Leite JR. Band structure of holes in p-'DELTA'-doping superlattices. Proceedings. 1994 ;[citado 2024 set. 07 ]
Trabalho de evento
Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers (1993)
Mendonca, C A C; Scolfaro, L M R; Henriques, André Bohomoletz; Oliveira, J. B. B.; Plentz, F; Shibli, S M; Meneses, E A; Leite, J. R.
Source: Proceedings. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
MENDONCA, C A C et al. Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers. 1993, Anais.. Singapura: World Scientific, 1993. . Acesso em: 07 set. 2024.
APA
Mendonca, C. A. C., Scolfaro, L. M. R., Henriques, A. B., Oliveira, J. B. B., Plentz, F., Shibli, S. M., et al. (1993). Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers. In Proceedings. Singapura: World Scientific.
NLM
Mendonca CAC, Scolfaro LMR, Henriques AB, Oliveira JBB, Plentz F, Shibli SM, Meneses EA, Leite JR. Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers. Proceedings. 1993 ;[citado 2024 set. 07 ]
Vancouver
Mendonca CAC, Scolfaro LMR, Henriques AB, Oliveira JBB, Plentz F, Shibli SM, Meneses EA, Leite JR. Hole confinement effects in periodically 'GAMA'-doped 'GA''AS' layers. Proceedings. 1993 ;[citado 2024 set. 07 ]
Parte de monografia/livro
One-electron states induced by 3d-transition metal impurities in diamond (1992)
Alves, H W L; Alves, J L A; Leite, J. R.
Source: 3rd School on Instrumentation in Elementary Particle Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
ALVES, H W L e ALVES, J L A e LEITE, J. R. One-electron states induced by 3d-transition metal impurities in diamond. 3rd School on Instrumentation in Elementary Particle Physics. Tradução . Singapore: World Scientific, 1992. . . Acesso em: 07 set. 2024.
APA
Alves, H. W. L., Alves, J. L. A., & Leite, J. R. (1992). One-electron states induced by 3d-transition metal impurities in diamond. In 3rd School on Instrumentation in Elementary Particle Physics. Singapore: World Scientific.
NLM
Alves HWL, Alves JLA, Leite JR. One-electron states induced by 3d-transition metal impurities in diamond. In: 3rd School on Instrumentation in Elementary Particle Physics. Singapore: World Scientific; 1992. [citado 2024 set. 07 ]
Vancouver
Alves HWL, Alves JLA, Leite JR. One-electron states induced by 3d-transition metal impurities in diamond. In: 3rd School on Instrumentation in Elementary Particle Physics. Singapore: World Scientific; 1992. [citado 2024 set. 07 ]
Parte de monografia/livro
Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS' (1991)
Camata, R P; Scolfaro, L M R; Martins, José Manuel de Vasconcelos; Leite, J. R.; Mendonca, C A C; Meneses, E A; Dias, I. F. L.; Bezerra, J C; Oliveira, A. G.
Source: Festschrift in Honor of R C Leite. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
CAMATA, R P et al. Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'. Festschrift in Honor of R C Leite. Tradução . Singapura: World Scientific, 1991. . . Acesso em: 07 set. 2024.
APA
Camata, R. P., Scolfaro, L. M. R., Martins, J. M. de V., Leite, J. R., Mendonca, C. A. C., Meneses, E. A., et al. (1991). Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'. In Festschrift in Honor of R C Leite. Singapura: World Scientific.
NLM
Camata RP, Scolfaro LMR, Martins JM de V, Leite JR, Mendonca CAC, Meneses EA, Dias IFL, Bezerra JC, Oliveira AG. Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'. In: Festschrift in Honor of R C Leite. Singapura: World Scientific; 1991. [citado 2024 set. 07 ]
Vancouver
Camata RP, Scolfaro LMR, Martins JM de V, Leite JR, Mendonca CAC, Meneses EA, Dias IFL, Bezerra JC, Oliveira AG. Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'. In: Festschrift in Honor of R C Leite. Singapura: World Scientific; 1991. [citado 2024 set. 07 ]
Trabalho de evento-resumo
Eletronic structure of semiconductors of group iv and iii-v compounds by the self-consistent variational cellular method (1990)
Ferraz, A. C.; Takahashi, E K; Leite, J. R.
Conference titles: Brazilian School of Semiconductors Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
FERRAZ, A. C. e TAKAHASHI, E K e LEITE, J. R. Eletronic structure of semiconductors of group iv and iii-v compounds by the self-consistent variational cellular method. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 07 set. 2024.
APA
Ferraz, A. C., Takahashi, E. K., & Leite, J. R. (1990). Eletronic structure of semiconductors of group iv and iii-v compounds by the self-consistent variational cellular method. In . Singapure: World Scientific.
NLM
Ferraz AC, Takahashi EK, Leite JR. Eletronic structure of semiconductors of group iv and iii-v compounds by the self-consistent variational cellular method. 1990 ;[citado 2024 set. 07 ]
Vancouver
Ferraz AC, Takahashi EK, Leite JR. Eletronic structure of semiconductors of group iv and iii-v compounds by the self-consistent variational cellular method. 1990 ;[citado 2024 set. 07 ]
Trabalho de evento-resumo
Eletronic structure of the 'MN IND.4' complex in silicon (1990)
Lino, A T; Leite, J. R.; Assali, L. V. C. ; Gomes, V M S
Conference titles: Brazilian School of Semiconductors Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
LINO, A T et al. Eletronic structure of the 'MN IND.4' complex in silicon. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 07 set. 2024.
APA
Lino, A. T., Leite, J. R., Assali, L. V. C., & Gomes, V. M. S. (1990). Eletronic structure of the 'MN IND.4' complex in silicon. In . Singapure: World Scientific.
NLM
Lino AT, Leite JR, Assali LVC, Gomes VMS. Eletronic structure of the 'MN IND.4' complex in silicon. 1990 ;[citado 2024 set. 07 ]
Vancouver
Lino AT, Leite JR, Assali LVC, Gomes VMS. Eletronic structure of the 'MN IND.4' complex in silicon. 1990 ;[citado 2024 set. 07 ]
Trabalho de evento-resumo
Microscopic models for 'AU'-'AU' and 'PT'-'PT' pair complexes in silicon (1990)
Alves, J L A; Chacham, H; Leite, J. R.
Conference titles: Brazilian School of Semiconductors Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
ALVES, J L A e CHACHAM, H e LEITE, J. R. Microscopic models for 'AU'-'AU' and 'PT'-'PT' pair complexes in silicon. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 07 set. 2024.
APA
Alves, J. L. A., Chacham, H., & Leite, J. R. (1990). Microscopic models for 'AU'-'AU' and 'PT'-'PT' pair complexes in silicon. In . Singapure: World Scientific.
NLM
Alves JLA, Chacham H, Leite JR. Microscopic models for 'AU'-'AU' and 'PT'-'PT' pair complexes in silicon. 1990 ;[citado 2024 set. 07 ]
Vancouver
Alves JLA, Chacham H, Leite JR. Microscopic models for 'AU'-'AU' and 'PT'-'PT' pair complexes in silicon. 1990 ;[citado 2024 set. 07 ]
Trabalho de evento-resumo
Optical transitions in undoped quantum wells under in-plane magnetic fields (1990)
Leite, J. R.; Gomes, V M S
Conference titles: Brazilian School of Semiconductors Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
LEITE, J. R. e GOMES, V M S. Optical transitions in undoped quantum wells under in-plane magnetic fields. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 07 set. 2024.
APA
Leite, J. R., & Gomes, V. M. S. (1990). Optical transitions in undoped quantum wells under in-plane magnetic fields. In . Singapure: World Scientific.
NLM
Leite JR, Gomes VMS. Optical transitions in undoped quantum wells under in-plane magnetic fields. 1990 ;[citado 2024 set. 07 ]
Vancouver
Leite JR, Gomes VMS. Optical transitions in undoped quantum wells under in-plane magnetic fields. 1990 ;[citado 2024 set. 07 ]
Trabalho de evento-resumo
Eletronic structure of chalcogen impurities in germanium (1990)
Castineira, J L P; Leite, J. R.; Gomes, V M S
Conference titles: Brazilian School of Semiconductors Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
CASTINEIRA, J L P e LEITE, J. R. e GOMES, V M S. Eletronic structure of chalcogen impurities in germanium. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 07 set. 2024.
APA
Castineira, J. L. P., Leite, J. R., & Gomes, V. M. S. (1990). Eletronic structure of chalcogen impurities in germanium. In . Singapure: World Scientific.
NLM
Castineira JLP, Leite JR, Gomes VMS. Eletronic structure of chalcogen impurities in germanium. 1990 ;[citado 2024 set. 07 ]
Vancouver
Castineira JLP, Leite JR, Gomes VMS. Eletronic structure of chalcogen impurities in germanium. 1990 ;[citado 2024 set. 07 ]
Trabalho de evento-resumo
Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium (1990)
Alves, H W L; Leite, J. R.; Alves, J L A
Conference titles: Brazilian School on Semiconductors Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
ALVES, H W L e LEITE, J. R. e ALVES, J L A. Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 07 set. 2024.
APA
Alves, H. W. L., Leite, J. R., & Alves, J. L. A. (1990). Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium. In . Singapure: World Scientific.
NLM
Alves HWL, Leite JR, Alves JLA. Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium. 1990 ;[citado 2024 set. 07 ]
Vancouver
Alves HWL, Leite JR, Alves JLA. Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium. 1990 ;[citado 2024 set. 07 ]
Trabalho de evento-resumo
Lattice response around a silicon vacancy (1990)
Dal Pino Junior, A; Silva, E C F; Leite, J. R.
Conference titles: Brazilian School of Semiconductors Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
DAL PINO JUNIOR, A e SILVA, E C F e LEITE, J. R. Lattice response around a silicon vacancy. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 07 set. 2024.
APA
Dal Pino Junior, A., Silva, E. C. F., & Leite, J. R. (1990). Lattice response around a silicon vacancy. In . Singapure: World Scientific.
NLM
Dal Pino Junior A, Silva ECF, Leite JR. Lattice response around a silicon vacancy. 1990 ;[citado 2024 set. 07 ]
Vancouver
Dal Pino Junior A, Silva ECF, Leite JR. Lattice response around a silicon vacancy. 1990 ;[citado 2024 set. 07 ]
Parte de monografia/livro
Deep levels induced by 3d-transition metal impurities in diamond (1988)
Alves, H W L; Leite, J. R.; Alves, J L A
Source: Current Topics on Semiconductor Physics. Unidade: IF
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ABNT
ALVES, H W L e LEITE, J. R. e ALVES, J L A. Deep levels induced by 3d-transition metal impurities in diamond. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 07 set. 2024.
APA
Alves, H. W. L., Leite, J. R., & Alves, J. L. A. (1988). Deep levels induced by 3d-transition metal impurities in diamond. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d-transition metal impurities in diamond. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 set. 07 ]
Vancouver
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d-transition metal impurities in diamond. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 set. 07 ]
Parte de monografia/livro
Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon (1988)
Assali, L. V. C. ; Leite, J. R.
Source: Current Topics on Semiconductor Physics. Unidade: IF
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ABNT
ASSALI, L. V. C. e LEITE, J. R. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 07 set. 2024.
APA
Assali, L. V. C., & Leite, J. R. (1988). Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 set. 07 ]
Vancouver
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 set. 07 ]
Trabalho de evento-resumo
Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon (1988)
Assali, L. V. C. ; Leite, J. R.
Source: Proceedings. Conference titles: Escola Brasileira de Fisica de Semicondutores. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ASSALI, L. V. C. e LEITE, J. R. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. 1988, Anais.. Singapore: World Scientific, 1988. . Acesso em: 07 set. 2024.
APA
Assali, L. V. C., & Leite, J. R. (1988). Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In Proceedings. Singapore: World Scientific.
NLM
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. Proceedings. 1988 ;[citado 2024 set. 07 ]
Vancouver
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. Proceedings. 1988 ;[citado 2024 set. 07 ]
Trabalho de evento-resumo
Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy (1988)
Dal Pino Junior, A; Silva, E C F; Leite, J. R.
Source: Proceedings. Conference titles: Escola Brasileira de Fisica de Semicondutores. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DAL PINO JUNIOR, A e SILVA, E C F e LEITE, J. R. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. 1988, Anais.. Singapore: World Scientific, 1988. . Acesso em: 07 set. 2024.
APA
Dal Pino Junior, A., Silva, E. C. F., & Leite, J. R. (1988). Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. In Proceedings. Singapore: World Scientific.
NLM
Dal Pino Junior A, Silva ECF, Leite JR. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. Proceedings. 1988 ;[citado 2024 set. 07 ]
Vancouver
Dal Pino Junior A, Silva ECF, Leite JR. Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy. Proceedings. 1988 ;[citado 2024 set. 07 ]
Parte de monografia/livro
Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si (1988)
Silva, E C F; Assali, L. V. C. ; Leite, J. R.; Dal Pino Junior, A
Source: Current Topics on Semiconductor Physics. Unidade: IF
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ABNT
SILVA, E C F et al. Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 07 set. 2024.
APA
Silva, E. C. F., Assali, L. V. C., Leite, J. R., & Dal Pino Junior, A. (1988). Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Silva ECF, Assali LVC, Leite JR, Dal Pino Junior A. Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 set. 07 ]
Vancouver
Silva ECF, Assali LVC, Leite JR, Dal Pino Junior A. Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 set. 07 ]
Parte de monografia/livro
Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields (1988)
Oliveira, G M G; Gomes, V M S; Leite, J. R.; Chaves, A S
Source: Current Topics on Semiconductor Physics. Unidade: IF
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ABNT
OLIVEIRA, G M G et al. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 07 set. 2024.
APA
Oliveira, G. M. G., Gomes, V. M. S., Leite, J. R., & Chaves, A. S. (1988). Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Oliveira GMG, Gomes VMS, Leite JR, Chaves AS. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 set. 07 ]
Vancouver
Oliveira GMG, Gomes VMS, Leite JR, Chaves AS. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 set. 07 ]

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