Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon (1988)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; ASSALI, LUCY VITORIA CREDIDIO - IF
- Unidade: IF
- Language: Português
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1988
- Source:
- Título do periódico: Proceedings
- Conference titles: Escola Brasileira de Fisica de Semicondutores
-
ABNT
ASSALI, L. V. C. e LEITE, J. R. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. 1988, Anais.. Singapore: World Scientific, 1988. . Acesso em: 19 abr. 2024. -
APA
Assali, L. V. C., & Leite, J. R. (1988). Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. In Proceedings. Singapore: World Scientific. -
NLM
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. Proceedings. 1988 ;[citado 2024 abr. 19 ] -
Vancouver
Assali LVC, Leite JR. Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon. Proceedings. 1988 ;[citado 2024 abr. 19 ] - Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si
- Hydrogen passivation of isolated impurities in silicon
- Modelo microscopico do aglomerado complexo 'MN IND.4' em silicio
- Vibrational-mode theory of acceptor- hydrogen complexes in silicon
- Electronic properties of the iron-boron impurity pair in silicon
- Propriedades eletronicas do complexo ferro-boro em silicio
- Ground state electronic properties of fe-b complex pair in silicon
- Microscopic structure of group-iii acceptor-hidrogen complexes in crystalline silicon
- Estrutura microscopica dos complexos aceitadores do grupo iii - hidrogenio em silicio
- Theoretical investigations of the bistability of iron-group iii acceptor pairs in silicon
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