Microscopic structure of group-iii acceptor-hidrogen complexes in crystalline silicon (1988)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; ASSALI, LUCY VITORIA CREDIDIO - IF
- Unidade: IF
- Language: Português
- Imprenta:
- Publisher: Institute of Physics
- Publisher place: Warsaw
- Date published: 1988
- Source:
- Título do periódico: Physics of Semiconductors
-
ABNT
LEITE, J. R.; ASSALI, L. V. C.; SILVA, E C F; BAUMVOL, I J R. Microscopic structure of group-iii acceptor-hidrogen complexes in crystalline silicon. In: Physics of Semiconductors[S.l: s.n.], 1988. -
APA
Leite, J. R., Assali, L. V. C., Silva, E. C. F., & Baumvol, I. J. R. (1988). Microscopic structure of group-iii acceptor-hidrogen complexes in crystalline silicon. In Physics of Semiconductors. Warsaw: Institute of Physics. -
NLM
Leite JR, Assali LVC, Silva ECF, Baumvol IJR. Microscopic structure of group-iii acceptor-hidrogen complexes in crystalline silicon. In: Physics of Semiconductors. Warsaw: Institute of Physics; 1988. -
Vancouver
Leite JR, Assali LVC, Silva ECF, Baumvol IJR. Microscopic structure of group-iii acceptor-hidrogen complexes in crystalline silicon. In: Physics of Semiconductors. Warsaw: Institute of Physics; 1988. - Propriedades eletronicas do complexo ferro-boro em silicio
- Ground state electronic properties of fe-b complex pair in silicon
- Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon
- Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon
- Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si
- Vibrational-mode theory of acceptor- hydrogen complexes in silicon
- Hydrogen passivation of isolated impurities in silicon
- Electronic properties of the iron-boron impurity pair in silicon
- Modelo microscopico do aglomerado complexo 'MN IND.4' em silicio
- Theoretical investigations of the bistability of iron-group iii acceptor pairs in silicon
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