Hydrogen passivation of isolated impurities in silicon (1987)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; ASSALI, LUCY VITORIA CREDIDIO - IF
- Unidade: IF
- Language: Português
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1987
- Source:
- Título: Proceedings
- Conference titles: International Conference Physics Semiconductors
-
ABNT
LEITE, J. R. e ASSALI, Lucy Vitoria Credidio. Hydrogen passivation of isolated impurities in silicon. 1987, Anais.. Singapore: World Scientific, 1987. . Acesso em: 24 jan. 2026. -
APA
Leite, J. R., & Assali, L. V. C. (1987). Hydrogen passivation of isolated impurities in silicon. In Proceedings. Singapore: World Scientific. -
NLM
Leite JR, Assali LVC. Hydrogen passivation of isolated impurities in silicon. Proceedings. 1987 ;[citado 2026 jan. 24 ] -
Vancouver
Leite JR, Assali LVC. Hydrogen passivation of isolated impurities in silicon. Proceedings. 1987 ;[citado 2026 jan. 24 ] - Microscopic model for the vibrational modes associated to the 'B IND.S''H IND.I' complex in si
- Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon
- Chemical trends in electronic properties of gold-3d transition metal pair complex in silicon
- Electronic properties of the iron-boron impurity pair in silicon
- Modelo microscopico do aglomerado complexo 'MN IND.4' em silicio
- Microscopic structure of group-iii acceptor-hidrogen complexes in crystalline silicon
- Estrutura microscopica dos complexos aceitadores do grupo iii - hidrogenio em silicio
- Vibrational-mode theory of acceptor- hydrogen complexes in silicon
- Bistability of iron-group iii acceptor pairs in silicon
- Theoretical investigations of the bistability of iron-group iii acceptor pairs in silicon
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