Optical transitions in undoped quantum wells under in-plane magnetic fields (1990)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; GOMES, VIVILI MARIA SILVA - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapure
- Date published: 1990
- Conference titles: Brazilian School of Semiconductors Physics
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ABNT
LEITE, J. R. e GOMES, V M S. Optical transitions in undoped quantum wells under in-plane magnetic fields. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 19 set. 2024. -
APA
Leite, J. R., & Gomes, V. M. S. (1990). Optical transitions in undoped quantum wells under in-plane magnetic fields. In . Singapure: World Scientific. -
NLM
Leite JR, Gomes VMS. Optical transitions in undoped quantum wells under in-plane magnetic fields. 1990 ;[citado 2024 set. 19 ] -
Vancouver
Leite JR, Gomes VMS. Optical transitions in undoped quantum wells under in-plane magnetic fields. 1990 ;[citado 2024 set. 19 ] - Electronic structure of oxygen-related complex defects in silicon
- Efeito de campos magneticos paralelos a pocos quanticos sobre as bandas de valencia e conducao em hetero-estruturas de 'GA''AS'-'AL''GA''AS'
- Efeito de campos magneticos paralelos a pocos quanticos sobre as bandas de valencia e conducao em hetero-estruturas de 'GA''AS'-'AL''GA''AS'
- Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon
- Eletronic structure of chalcogen impurities in germanium
- Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields
- Estrutura eletronica de impurezas em germanio
- Self-consistent calculations of the two-dimensional electron density in modulation-doped superlattices
- Microscopic models of 'HG POT.+', 'AU POT.0' and 'PT POT.-' Isoelectronic interstitial impurities in silicon
- Calculos autoconsistentes da densidade bidimensional de eletrons em super-redes com dopagem
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