Electronic structure of oxygen-related complex defects in silicon (1985)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; GOMES, VIVILI MARIA SILVA - IF
- Unidade: IF
- Language: Português
- Imprenta:
- Source:
- Título: Proceedings
- Conference titles: Brazilian School on Physics
-
ABNT
GOMES, V M S e LEITE, J. R. Electronic structure of oxygen-related complex defects in silicon. 1985, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 1985. . Acesso em: 23 jan. 2026. -
APA
Gomes, V. M. S., & Leite, J. R. (1985). Electronic structure of oxygen-related complex defects in silicon. In Proceedings. São Paulo: Instituto de Física, Universidade de São Paulo. -
NLM
Gomes VMS, Leite JR. Electronic structure of oxygen-related complex defects in silicon. Proceedings. 1985 ;[citado 2026 jan. 23 ] -
Vancouver
Gomes VMS, Leite JR. Electronic structure of oxygen-related complex defects in silicon. Proceedings. 1985 ;[citado 2026 jan. 23 ] - Estrutura eletronica de impurezas em germanio
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