Electronic structure of oxygen-related complex defects in silicon (1985)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; GOMES, VIVILI MARIA SILVA - IF
- Unidade: IF
- Language: Português
- Imprenta:
- Source:
- Título: Proceedings
- Conference titles: Brazilian School on Physics
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ABNT
GOMES, V M S e LEITE, J. R. Electronic structure of oxygen-related complex defects in silicon. 1985, Anais.. São Paulo: Instituto de Física, Universidade de São Paulo, 1985. . Acesso em: 15 mar. 2026. -
APA
Gomes, V. M. S., & Leite, J. R. (1985). Electronic structure of oxygen-related complex defects in silicon. In Proceedings. São Paulo: Instituto de Física, Universidade de São Paulo. -
NLM
Gomes VMS, Leite JR. Electronic structure of oxygen-related complex defects in silicon. Proceedings. 1985 ;[citado 2026 mar. 15 ] -
Vancouver
Gomes VMS, Leite JR. Electronic structure of oxygen-related complex defects in silicon. Proceedings. 1985 ;[citado 2026 mar. 15 ] - Microscopic models of 'HG POT.+', 'AU POT.0' and 'PT POT.-' Isoelectronic interstitial impurities in silicon
- Self-consistent calculations of the two-dimensional electron density in modulation-doped superlattices
- Modelos microscopicos de centros relacionados com hidrogenio em silicio
- Ab-initio mo electronic structure calculations of defect-pair complexes in silicon
- Electronic structure of complex defects in silicon
- Defeitos complexos relacionados ao oxigenio em silicio
- Estrutura eletronica de impurezas em germanio
- Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields
- Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields
- Electronic subbands at gaas-algaas heterojunctions in paralel magnetic fields
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