Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields (1986)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; GOMES, VIVILI MARIA SILVA - IF
- Unidade: IF
- Assunto: CAMPO MAGNÉTICO
- Language: Português
- Source:
- Título: International Journal of Quantum Chemistry. Symposium
- Volume/Número/Paginação/Ano: v.20, p.335-46, 1986
-
ABNT
LEITE, J. R. et al. Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields. International Journal of Quantum Chemistry. Symposium, v. 20, p. 335-46, 1986Tradução . . Acesso em: 11 mar. 2026. -
APA
Leite, J. R., Oliveira, G. M. G., Gomes, V. M. S., & Chaves, A. S. (1986). Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields. International Journal of Quantum Chemistry. Symposium, 20, 335-46. -
NLM
Leite JR, Oliveira GMG, Gomes VMS, Chaves AS. Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields. International Journal of Quantum Chemistry. Symposium. 1986 ;20 335-46.[citado 2026 mar. 11 ] -
Vancouver
Leite JR, Oliveira GMG, Gomes VMS, Chaves AS. Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields. International Journal of Quantum Chemistry. Symposium. 1986 ;20 335-46.[citado 2026 mar. 11 ] - Microscopic models of 'HG POT.+', 'AU POT.0' and 'PT POT.-' Isoelectronic interstitial impurities in silicon
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- Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields
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- Efeito de campos magneticos paralelos a pocos quanticos sobre as bandas de valencia e conducao em hetero-estruturas de 'GA''AS'-'AL''GA''AS'
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