Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields (1988)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; GOMES, VIVILI MARIA SILVA - IF
- School: IF
- Language: Português
- Imprenta:
- Publisher: World Scientific
- Place of publication: Singapore
- Date published: 1988
- Source:
- Título do periódico: Current Topics on Semiconductor Physics
-
ABNT
OLIVEIRA, G M G; GOMES, V M S; LEITE, J. R.; CHAVES, A S. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In: Current Topics on Semiconductor Physics[S.l: s.n.], 1988. -
APA
Oliveira, G. M. G., Gomes, V. M. S., Leite, J. R., & Chaves, A. S. (1988). Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In Current Topics on Semiconductor Physics. Singapore: World Scientific. -
NLM
Oliveira GMG, Gomes VMS, Leite JR, Chaves AS. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. -
Vancouver
Oliveira GMG, Gomes VMS, Leite JR, Chaves AS. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. - Electronic structure of oxygen-related complex defects in silicon
- Efeito de campos magneticos paralelos a pocos quanticos sobre as bandas de valencia e conducao em hetero-estruturas de 'GA''AS'-'AL''GA''AS'
- Efeito de campos magneticos paralelos a pocos quanticos sobre as bandas de valencia e conducao em hetero-estruturas de 'GA''AS'-'AL''GA''AS'
- Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon
- Self-consistent calculations of the two-dimensional electron density in modulation-doped superlattices
- Eletronic structure of chalcogen impurities in germanium
- Estrutura eletronica de impurezas em germanio
- Microscopic models of 'HG POT.+', 'AU POT.0' and 'PT POT.-' Isoelectronic interstitial impurities in silicon
- Calculos autoconsistentes da densidade bidimensional de eletrons em super-redes com dopagem
- Estrutura eletronica de impurezas em germanio
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