Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields (1988)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; GOMES, VIVILI MARIA SILVA - IF
- Unidade: IF
- Language: Português
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1988
- Source:
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ABNT
OLIVEIRA, G M G et al. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 11 mar. 2026. -
APA
Oliveira, G. M. G., Gomes, V. M. S., Leite, J. R., & Chaves, A. S. (1988). Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In Current Topics on Semiconductor Physics. Singapore: World Scientific. -
NLM
Oliveira GMG, Gomes VMS, Leite JR, Chaves AS. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 mar. 11 ] -
Vancouver
Oliveira GMG, Gomes VMS, Leite JR, Chaves AS. Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 mar. 11 ] - Microscopic models of 'HG POT.+', 'AU POT.0' and 'PT POT.-' Isoelectronic interstitial impurities in silicon
- Self-consistent calculations of the two-dimensional electron density in modulation-doped superlattices
- Modelos microscopicos de centros relacionados com hidrogenio em silicio
- Ab-initio mo electronic structure calculations of defect-pair complexes in silicon
- Electronic structure of complex defects in silicon
- Defeitos complexos relacionados ao oxigenio em silicio
- Estrutura eletronica de impurezas em germanio
- Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields
- Electronic subbands at gaas-algaas heterojunctions in paralel magnetic fields
- Efeito de campos magneticos paralelos a pocos quanticos sobre as bandas de valencia e conducao em hetero-estruturas de 'GA''AS'-'AL''GA''AS'
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