Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon (1986)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; GOMES, VIVILI MARIA SILVA - IF
- Unidade: IF
- Language: Português
- Source:
- Título do periódico: Mat Science Forum
- Volume/Número/Paginação/Ano: v.10-2, n.pt.3, p.905-10, 1986
- Conference titles: International Conference on Defects in Semiconductors
-
ABNT
GOMES, V M S; LEITE, J. R. Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum[S.l: s.n.], 1986. -
APA
Gomes, V. M. S., & Leite, J. R. (1986). Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. -
NLM
Gomes VMS, Leite JR. Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. 1986 ;10-2( pt.3): 905-10. -
Vancouver
Gomes VMS, Leite JR. Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. 1986 ;10-2( pt.3): 905-10. - Electronic structure of oxygen-related complex defects in silicon
- Efeito de campos magneticos paralelos a pocos quanticos sobre as bandas de valencia e conducao em hetero-estruturas de 'GA''AS'-'AL''GA''AS'
- Efeito de campos magneticos paralelos a pocos quanticos sobre as bandas de valencia e conducao em hetero-estruturas de 'GA''AS'-'AL''GA''AS'
- Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields
- Estrutura eletronica de impurezas em germanio
- Eletronic structure of chalcogen impurities in germanium
- Self-consistent calculations of the two-dimensional electron density in modulation-doped superlattices
- Calculos autoconsistentes da densidade bidimensional de eletrons em super-redes com dopagem
- Estrutura eletronica de impurezas em germanio
- Microscopic models of 'HG POT.+', 'AU POT.0' and 'PT POT.-' Isoelectronic interstitial impurities in silicon
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