Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon (1986)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; GOMES, VIVILI MARIA SILVA - IF
- Unidade: IF
- Language: Português
- Source:
- Título: Mat Science Forum
- Volume/Número/Paginação/Ano: v.10-2, n.pt.3, p.905-10, 1986
- Conference titles: International Conference on Defects in Semiconductors
-
ABNT
GOMES, V M S e LEITE, J. R. Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. [S.l.]: Instituto de Física, Universidade de São Paulo. . Acesso em: 23 jan. 2026. , 1986 -
APA
Gomes, V. M. S., & Leite, J. R. (1986). Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. Instituto de Física, Universidade de São Paulo. -
NLM
Gomes VMS, Leite JR. Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. 1986 ;10-2( pt.3): 905-10.[citado 2026 jan. 23 ] -
Vancouver
Gomes VMS, Leite JR. Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. 1986 ;10-2( pt.3): 905-10.[citado 2026 jan. 23 ] - Estrutura eletronica de impurezas em germanio
- Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields
- Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields
- Electronic subbands at gaas-algaas heterojunctions in paralel magnetic fields
- Efeito de campos magneticos paralelos a pocos quanticos sobre as bandas de valencia e conducao em hetero-estruturas de 'GA''AS'-'AL''GA''AS'
- Electronic structure of oxygen-related complex defects in silicon
- Impurity levels induced by a c impurity in 'GA''AS'
- Intersubband transition energies in quantum wells in n-type gaas-'AL IND.X''GA IND.1-X'as heterostructures
- Impurezas de metal de transicao em compostos iii-v
- Behavior of the electron-hole gas in quantum wells in 'GAAS-AL IND.X''GA IND.1-X''AS' heterosctruture under in plane magnetic fields
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