Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon (1986)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; GOMES, VIVILI MARIA SILVA - IF
- Unidade: IF
- Language: Português
- Source:
- Título: Mat Science Forum
- Volume/Número/Paginação/Ano: v.10-2, n.pt.3, p.905-10, 1986
- Conference titles: International Conference on Defects in Semiconductors
-
ABNT
GOMES, V M S e LEITE, J. R. Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. [S.l.]: Instituto de Física, Universidade de São Paulo. . Acesso em: 11 mar. 2026. , 1986 -
APA
Gomes, V. M. S., & Leite, J. R. (1986). Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. Instituto de Física, Universidade de São Paulo. -
NLM
Gomes VMS, Leite JR. Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. 1986 ;10-2( pt.3): 905-10.[citado 2026 mar. 11 ] -
Vancouver
Gomes VMS, Leite JR. Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon. Mat Science Forum. 1986 ;10-2( pt.3): 905-10.[citado 2026 mar. 11 ] - Microscopic models of 'HG POT.+', 'AU POT.0' and 'PT POT.-' Isoelectronic interstitial impurities in silicon
- Self-consistent calculations of the two-dimensional electron density in modulation-doped superlattices
- Modelos microscopicos de centros relacionados com hidrogenio em silicio
- Ab-initio mo electronic structure calculations of defect-pair complexes in silicon
- Electronic structure of complex defects in silicon
- Defeitos complexos relacionados ao oxigenio em silicio
- Estrutura eletronica de impurezas em germanio
- Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields
- Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields
- Electronic subbands at gaas-algaas heterojunctions in paralel magnetic fields
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
