Eletronic structure of chalcogen impurities in germanium (1990)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; GOMES, VIVILI MARIA SILVA - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapure
- Date published: 1990
- Conference titles: Brazilian School of Semiconductors Physics
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ABNT
CASTINEIRA, J L P e LEITE, J. R. e GOMES, V M S. Eletronic structure of chalcogen impurities in germanium. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 15 mar. 2026. -
APA
Castineira, J. L. P., Leite, J. R., & Gomes, V. M. S. (1990). Eletronic structure of chalcogen impurities in germanium. In . Singapure: World Scientific. -
NLM
Castineira JLP, Leite JR, Gomes VMS. Eletronic structure of chalcogen impurities in germanium. 1990 ;[citado 2026 mar. 15 ] -
Vancouver
Castineira JLP, Leite JR, Gomes VMS. Eletronic structure of chalcogen impurities in germanium. 1990 ;[citado 2026 mar. 15 ] - Microscopic models of 'HG POT.+', 'AU POT.0' and 'PT POT.-' Isoelectronic interstitial impurities in silicon
- Self-consistent calculations of the two-dimensional electron density in modulation-doped superlattices
- Modelos microscopicos de centros relacionados com hidrogenio em silicio
- Ab-initio mo electronic structure calculations of defect-pair complexes in silicon
- Electronic structure of complex defects in silicon
- Defeitos complexos relacionados ao oxigenio em silicio
- Estrutura eletronica de impurezas em germanio
- Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields
- Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields
- Electronic subbands at gaas-algaas heterojunctions in paralel magnetic fields
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