Lattice response around a silicon vacancy (1990)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapure
- Date published: 1990
- Conference titles: Brazilian School of Semiconductors Physics
-
ABNT
DAL PINO JUNIOR, A e SILVA, Euzi Conceição Fernandes da e LEITE, J. R. Lattice response around a silicon vacancy. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 17 mar. 2026. -
APA
Dal Pino Junior, A., Silva, E. C. F. da, & Leite, J. R. (1990). Lattice response around a silicon vacancy. In . Singapure: World Scientific. -
NLM
Dal Pino Junior A, Silva ECF da, Leite JR. Lattice response around a silicon vacancy. 1990 ;[citado 2026 mar. 17 ] -
Vancouver
Dal Pino Junior A, Silva ECF da, Leite JR. Lattice response around a silicon vacancy. 1990 ;[citado 2026 mar. 17 ] - The optical properties o delta-doped single heterojunctions: growth direction effects
- Green's function calculations of the formations entropy of a vacancy in silicon
- Investigation of h-band emission in single heterojunctions: doping role of Si atoms
- The optical property of delta-dopped single heterojunctions: growth direction effects
- Vibrational properties of cubic 'Al IND.X' 'Ga IND.1-X'N and 'In IND.X' 'Ga IND.1-X'N ternary alloys
- Cálculo do espectro de fônons dos nitretos BN, AIN, GaN e InN
- Hydrogen passivation of shallow donors in silicon
- The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
- InAs/GaAs quantum dots optically active at 1.5 'mu'
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
