Lattice response around a silicon vacancy (1990)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapure
- Date published: 1990
- Conference titles: Brazilian School of Semiconductors Physics
-
ABNT
DAL PINO JUNIOR, A e SILVA, Euzi Conceição Fernandes da e LEITE, J. R. Lattice response around a silicon vacancy. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 26 jan. 2026. -
APA
Dal Pino Junior, A., Silva, E. C. F. da, & Leite, J. R. (1990). Lattice response around a silicon vacancy. In . Singapure: World Scientific. -
NLM
Dal Pino Junior A, Silva ECF da, Leite JR. Lattice response around a silicon vacancy. 1990 ;[citado 2026 jan. 26 ] -
Vancouver
Dal Pino Junior A, Silva ECF da, Leite JR. Lattice response around a silicon vacancy. 1990 ;[citado 2026 jan. 26 ] - Cálculo do espectro de fônons dos nitretos BN, AIN, GaN e InN
- Vibrational properties of cubic 'Al IND.X' 'Ga IND.1-X'N and 'In IND.X' 'Ga IND.1-X'N ternary alloys
- The optical properties o delta-doped single heterojunctions: growth direction effects
- Green's function calculations of the formations entropy of a vacancy in silicon
- Investigation of h-band emission in single heterojunctions: doping role of Si atoms
- The optical property of delta-dopped single heterojunctions: growth direction effects
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
- p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates
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