The optical property of delta-dopped single heterojunctions: growth direction effects (2001)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; ÓPTICA (PROPRIEDADES)
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
DANTAS, N O et al. The optical property of delta-dopped single heterojunctions: growth direction effects. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 26 jan. 2026. -
APA
Dantas, N. O., Qu, F., Leite, J. R., & Silva, E. C. F. da. (2001). The optical property of delta-dopped single heterojunctions: growth direction effects. In Resumos. São Paulo: SBF. -
NLM
Dantas NO, Qu F, Leite JR, Silva ECF da. The optical property of delta-dopped single heterojunctions: growth direction effects. Resumos. 2001 ;[citado 2026 jan. 26 ] -
Vancouver
Dantas NO, Qu F, Leite JR, Silva ECF da. The optical property of delta-dopped single heterojunctions: growth direction effects. Resumos. 2001 ;[citado 2026 jan. 26 ] - Cálculo do espectro de fônons dos nitretos BN, AIN, GaN e InN
- Vibrational properties of cubic 'Al IND.X' 'Ga IND.1-X'N and 'In IND.X' 'Ga IND.1-X'N ternary alloys
- The optical properties o delta-doped single heterojunctions: growth direction effects
- Lattice response around a silicon vacancy
- Green's function calculations of the formations entropy of a vacancy in silicon
- Investigation of h-band emission in single heterojunctions: doping role of Si atoms
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
- Large InAs/GaAs quantum dots with an optical response in the long-wavelength region
- p-type Si-doped structures grown by molecular beam epitaxy on (311)A GaAs substrates
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