Vibrational properties of cubic 'Al IND.X' 'Ga IND.1-X'N and 'In IND.X' 'Ga IND.1-X'N ternary alloys (2002)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: ESTRUTURA ELETRÔNICA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Physica Status Solidi B
- ISSN: 0370-1972
- Volume/Número/Paginação/Ano: v. 232, n. 1, p. 182-187, 2002
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ABNT
SANTOS, A M et al. Vibrational properties of cubic 'Al IND.X' 'Ga IND.1-X'N and 'In IND.X' 'Ga IND.1-X'N ternary alloys. Physica Status Solidi B, v. 232, n. 1, p. 182-187, 2002Tradução . . Disponível em: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=94517970&PLACEBO=IE.pdf. Acesso em: 17 mar. 2026. -
APA
Santos, A. M., Silva, E. C. F. da, Noriega, O. C., Alves, H. W. L., Alves, J. L. A., & Leite, J. R. (2002). Vibrational properties of cubic 'Al IND.X' 'Ga IND.1-X'N and 'In IND.X' 'Ga IND.1-X'N ternary alloys. Physica Status Solidi B, 232( 1), 182-187. Recuperado de http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=94517970&PLACEBO=IE.pdf -
NLM
Santos AM, Silva ECF da, Noriega OC, Alves HWL, Alves JLA, Leite JR. Vibrational properties of cubic 'Al IND.X' 'Ga IND.1-X'N and 'In IND.X' 'Ga IND.1-X'N ternary alloys [Internet]. Physica Status Solidi B. 2002 ; 232( 1): 182-187.[citado 2026 mar. 17 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=94517970&PLACEBO=IE.pdf -
Vancouver
Santos AM, Silva ECF da, Noriega OC, Alves HWL, Alves JLA, Leite JR. Vibrational properties of cubic 'Al IND.X' 'Ga IND.1-X'N and 'In IND.X' 'Ga IND.1-X'N ternary alloys [Internet]. Physica Status Solidi B. 2002 ; 232( 1): 182-187.[citado 2026 mar. 17 ] Available from: http://www3.interscience.wiley.com/cgi-bin/fulltext?ID=94517970&PLACEBO=IE.pdf - The optical properties o delta-doped single heterojunctions: growth direction effects
- Lattice response around a silicon vacancy
- Green's function calculations of the formations entropy of a vacancy in silicon
- Investigation of h-band emission in single heterojunctions: doping role of Si atoms
- The optical property of delta-dopped single heterojunctions: growth direction effects
- Cálculo do espectro de fônons dos nitretos BN, AIN, GaN e InN
- Hydrogen passivation of shallow donors in silicon
- The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
- InAs/GaAs quantum dots optically active at 1.5 'mu'
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