Green's function calculations of the formations entropy of a vacancy in silicon (1989)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- Assunto: FÍSICA DA MATÉRIA CONDENSADA
- Language: Inglês
- Source:
- Título: Materials Science Forum
- Volume/Número/Paginação/Ano: v.38-41, p.263, 1989
-
ABNT
LEITE, J. R. e SILVA, Euzi Conceição Fernandes da e DAL PINO JUNIOR, A. Green's function calculations of the formations entropy of a vacancy in silicon. Materials Science Forum, v. 38-41, p. 263, 1989Tradução . . Acesso em: 17 mar. 2026. -
APA
Leite, J. R., Silva, E. C. F. da, & Dal Pino Junior, A. (1989). Green's function calculations of the formations entropy of a vacancy in silicon. Materials Science Forum, 38-41, 263. -
NLM
Leite JR, Silva ECF da, Dal Pino Junior A. Green's function calculations of the formations entropy of a vacancy in silicon. Materials Science Forum. 1989 ;38-41 263.[citado 2026 mar. 17 ] -
Vancouver
Leite JR, Silva ECF da, Dal Pino Junior A. Green's function calculations of the formations entropy of a vacancy in silicon. Materials Science Forum. 1989 ;38-41 263.[citado 2026 mar. 17 ] - The optical properties o delta-doped single heterojunctions: growth direction effects
- Lattice response around a silicon vacancy
- Investigation of h-band emission in single heterojunctions: doping role of Si atoms
- The optical property of delta-dopped single heterojunctions: growth direction effects
- Vibrational properties of cubic 'Al IND.X' 'Ga IND.1-X'N and 'In IND.X' 'Ga IND.1-X'N ternary alloys
- Cálculo do espectro de fônons dos nitretos BN, AIN, GaN e InN
- Hydrogen passivation of shallow donors in silicon
- The effect of illumination on the electronic structure of Si 'alfa'-dopped 'In IND.0.15' 'Ga IND.0.85' As/GaAs quantum well
- Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
- InAs/GaAs quantum dots optically active at 1.5 'mu'
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