Investigation of h-band emission in single heterojunctions: doping role of Si atoms (2001)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; ÓPTICA (PROPRIEDADES); FOTOLUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
QU, Fanyao et al. Investigation of h-band emission in single heterojunctions: doping role of Si atoms. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 26 abr. 2024. -
APA
Qu, F., Dantas, N. O., Leite, J. R., & Silva, E. C. F. da. (2001). Investigation of h-band emission in single heterojunctions: doping role of Si atoms. In Resumos. São Paulo: SBF. -
NLM
Qu F, Dantas NO, Leite JR, Silva ECF da. Investigation of h-band emission in single heterojunctions: doping role of Si atoms. Resumos. 2001 ;[citado 2024 abr. 26 ] -
Vancouver
Qu F, Dantas NO, Leite JR, Silva ECF da. Investigation of h-band emission in single heterojunctions: doping role of Si atoms. Resumos. 2001 ;[citado 2024 abr. 26 ] - Lattice response around a silicon vacancy
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- Cálculo do espectro de fônons dos nitretos BN, AIN, GaN e InN
- The optical properties o delta-doped single heterojunctions: growth direction effects
- Green's function calculations of the formations entropy of a vacancy in silicon
- The optical property of delta-dopped single heterojunctions: growth direction effects
- Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers
- Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
- Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
- Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
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