Investigation of h-band emission in single heterojunctions: doping role of Si atoms (2001)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; ÓPTICA (PROPRIEDADES); FOTOLUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
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ABNT
QU, Fanyao et al. Investigation of h-band emission in single heterojunctions: doping role of Si atoms. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 28 mar. 2024. -
APA
Qu, F., Dantas, N. O., Leite, J. R., & Silva, E. C. F. da. (2001). Investigation of h-band emission in single heterojunctions: doping role of Si atoms. In Resumos. São Paulo: SBF. -
NLM
Qu F, Dantas NO, Leite JR, Silva ECF da. Investigation of h-band emission in single heterojunctions: doping role of Si atoms. Resumos. 2001 ;[citado 2024 mar. 28 ] -
Vancouver
Qu F, Dantas NO, Leite JR, Silva ECF da. Investigation of h-band emission in single heterojunctions: doping role of Si atoms. Resumos. 2001 ;[citado 2024 mar. 28 ] - Cálculo do espectro de fônons dos nitretos BN, AIN, GaN e InN
- Lattice response around a silicon vacancy
- Vibrational properties of cubic 'Al IND.X' 'Ga IND.1-X'N and 'In IND.X' 'Ga IND.1-X'N ternary alloys
- The optical properties o delta-doped single heterojunctions: growth direction effects
- Green's function calculations of the formations entropy of a vacancy in silicon
- The optical property of delta-dopped single heterojunctions: growth direction effects
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- Theory of luminescence spectra 'delta'-doping structures: application to GaAs
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
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