Deep levels induced by 3d-transition metal impurities in diamond (1988)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Language: Português
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapore
- Date published: 1988
- Source:
-
ABNT
ALVES, H W L e LEITE, J. R. e ALVES, J L A. Deep levels induced by 3d-transition metal impurities in diamond. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 23 jan. 2026. -
APA
Alves, H. W. L., Leite, J. R., & Alves, J. L. A. (1988). Deep levels induced by 3d-transition metal impurities in diamond. In Current Topics on Semiconductor Physics. Singapore: World Scientific. -
NLM
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d-transition metal impurities in diamond. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ] -
Vancouver
Alves HWL, Leite JR, Alves JLA. Deep levels induced by 3d-transition metal impurities in diamond. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2026 jan. 23 ] - Optical properties of cubic InGaN epilayers grown by MBE
- Elementary excitations of modulation-doped quantum-wells
- Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures
- Theoretical LEED parameters for the zinc-blende GaN (110) surface
- Deep-levels in diamond: the substitucional nitrogen and the simple neutrol vacancy
- Self-consistent band structure calculations by the variational cellular method
- Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics
- Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
- Deep-levels associated to chalcogen impurities in silicon
- Ferromagnetism in the metallic phase of (Ga, Mn)N nanostructures
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