Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS' (1991)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; MARTINS, JOSE MANUEL DE VASCONCELOS - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: World Scientific
- Publisher place: Singapura
- Date published: 1991
- Source:
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ABNT
CAMATA, R P et al. Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'. Festschrift in Honor of R C Leite. Tradução . Singapura: World Scientific, 1991. . . Acesso em: 17 out. 2024. -
APA
Camata, R. P., Scolfaro, L. M. R., Martins, J. M. de V., Leite, J. R., Mendonca, C. A. C., Meneses, E. A., et al. (1991). Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'. In Festschrift in Honor of R C Leite. Singapura: World Scientific. -
NLM
Camata RP, Scolfaro LMR, Martins JM de V, Leite JR, Mendonca CAC, Meneses EA, Dias IFL, Bezerra JC, Oliveira AG. Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'. In: Festschrift in Honor of R C Leite. Singapura: World Scientific; 1991. [citado 2024 out. 17 ] -
Vancouver
Camata RP, Scolfaro LMR, Martins JM de V, Leite JR, Mendonca CAC, Meneses EA, Dias IFL, Bezerra JC, Oliveira AG. Built-in eletric-field at modulation doped 'GA''AS' / 'GA''AL''AS' heterojunctions and delta-doped 'GA''AS'. In: Festschrift in Honor of R C Leite. Singapura: World Scientific; 1991. [citado 2024 out. 17 ] - Efeitos de superficie no calculo de perfis de potencial eletrico em 'GA''AS' com dopagem planar
- Line shape analysis of photoreflectance spectra from 'DELTA'-doped structures
- Influence of electric fields in the 'SI' delta-doped 'GA''AS' self-consistent potential profile
- Effect of temperature on the buit-in electric field in 'GA''AS' / 'GA'as''as': 'SI' heterostructures
- Interband transitions of interband transitions of 'SI' 2-doped layers in para-type 'GA''AS'
- Electronic structure of 'BE'-doped 'GA''AS'
- Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Energy levels due to n-type'GAMA'-doping in silicon
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
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