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Artigo de periodico
Hole mobility in zincblende c-GaN (2004)
Rodrigues, C G; Fernandez, J R L; Leite, J. R.; Chitta, V A; Freire, V N; Vasconcellos, A R; Luzzi, R
Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES, TERMODINÂMICA
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ABNT
RODRIGUES, C G et al. Hole mobility in zincblende c-GaN. Journal of Applied Physics, 2004Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvips. Acesso em: 13 nov. 2024.
APA
Rodrigues, C. G., Fernandez, J. R. L., Leite, J. R., Chitta, V. A., Freire, V. N., Vasconcellos, A. R., & Luzzi, R. (2004). Hole mobility in zincblende c-GaN. Journal of Applied Physics. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvips
NLM
Rodrigues CG, Fernandez JRL, Leite JR, Chitta VA, Freire VN, Vasconcellos AR, Luzzi R. Hole mobility in zincblende c-GaN [Internet]. Journal of Applied Physics. 2004 ;[citado 2024 nov. 13 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvips
Vancouver
Rodrigues CG, Fernandez JRL, Leite JR, Chitta VA, Freire VN, Vasconcellos AR, Luzzi R. Hole mobility in zincblende c-GaN [Internet]. Journal of Applied Physics. 2004 ;[citado 2024 nov. 13 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000095000009004914000001&idtype=cvips
Artigo de periodico
Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots (2003)
Duarte, C A; Silva, Euzi Conceicao Fernandes da; Quivy, A. A.; Silva, M J da; Martini, S; Leite, J. R.; Meneses, E A; Lauretto, E
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIFRAÇÃO POR RAIOS X, ÓPTICA, FOTOLUMINESCÊNCIA
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ABNT
DUARTE, C A et al. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, v. 93, n. 10, p. 6279-6283, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1568538. Acesso em: 13 nov. 2024.
APA
Duarte, C. A., Silva, E. C. F. da, Quivy, A. A., Silva, M. J. da, Martini, S., Leite, J. R., et al. (2003). Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots. Journal of Applied Physics, 93( 10), 6279-6283. doi:10.1063/1.1568538
NLM
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.1568538
Vancouver
Duarte CA, Silva ECF da, Quivy AA, Silva MJ da, Martini S, Leite JR, Meneses EA, Lauretto E. Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots [Internet]. Journal of Applied Physics. 2003 ; 93( 10): 6279-6283.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.1568538
Artigo de periodico
Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction (2003)
Martini, S; Quivy, A. A.; Silva, M J da; Lamas, T E; Silva, E C F da; Leite, J. R.; Abramof, E
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIFRAÇÃO POR RAIOS X
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ABNT
MARTINI, S et al. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction. Journal of Applied Physics, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1621738. Acesso em: 13 nov. 2024.
APA
Martini, S., Quivy, A. A., Silva, M. J. da, Lamas, T. E., Silva, E. C. F. da, Leite, J. R., & Abramof, E. (2003). Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction. Journal of Applied Physics. doi:10.1063/1.1621738
NLM
Martini S, Quivy AA, Silva MJ da, Lamas TE, Silva ECF da, Leite JR, Abramof E. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction [Internet]. Journal of Applied Physics. 2003 ;[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.1621738
Vancouver
Martini S, Quivy AA, Silva MJ da, Lamas TE, Silva ECF da, Leite JR, Abramof E. Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction [Internet]. Journal of Applied Physics. 2003 ;[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.1621738
Artigo de periodico
Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient (2003)
Sales, F V de; Cruz, J M R; Silva, S W da; Soler, M A G; Morais, P C de; Silva, M J da; Quivy, A. A.; Leite, J. R.
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA
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ABNT
SALES, F V de et al. Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient. Journal of Applied Physics, v. 94, n. 3, p. 1787-1794, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1586953. Acesso em: 13 nov. 2024.
APA
Sales, F. V. de, Cruz, J. M. R., Silva, S. W. da, Soler, M. A. G., Morais, P. C. de, Silva, M. J. da, et al. (2003). Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient. Journal of Applied Physics, 94( 3), 1787-1794. doi:10.1063/1.1586953
NLM
Sales FV de, Cruz JMR, Silva SW da, Soler MAG, Morais PC de, Silva MJ da, Quivy AA, Leite JR. Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient [Internet]. Journal of Applied Physics. 2003 ; 94( 3): 1787-1794.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.1586953
Vancouver
Sales FV de, Cruz JMR, Silva SW da, Soler MAG, Morais PC de, Silva MJ da, Quivy AA, Leite JR. Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient [Internet]. Journal of Applied Physics. 2003 ; 94( 3): 1787-1794.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.1586953
Artigo de periodico
Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations (2002)
Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Furthmuller, J; Bechstedt, F
Source: Journal of Applied Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA DOS SÓLIDOS, MUDANÇA DE FASE, ESTRUTURA ELETRÔNICA
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ABNT
TELES, L. K. et al. Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics, v. 92, n. 12, p. 7109-7113, 2002Tradução . . Acesso em: 13 nov. 2024.
APA
Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Furthmuller, J., & Bechstedt, F. (2002). Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics, 92( 12), 7109-7113.
NLM
Teles LK, Scolfaro LMR, Leite JR, Furthmuller J, Bechstedt F. Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics. 2002 ; 92( 12): 7109-7113.[citado 2024 nov. 13 ]
Vancouver
Teles LK, Scolfaro LMR, Leite JR, Furthmuller J, Bechstedt F. Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics. 2002 ; 92( 12): 7109-7113.[citado 2024 nov. 13 ]
Artigo de periodico
Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers (2002)
Pusep, Yuri A ; Silva, M T O; Fernandez, J R L; Chitta, V A; Leite, J. R.; Frey, T; As, D J; Schikora, D; Lischka, K
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: SEMICONDUTORES, SEMICONDUTIVIDADE
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ABNT
PUSEP, Yuri A et al. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers. Journal of Applied Physics, v. 91, n. 9, p. 6197-6199, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips. Acesso em: 13 nov. 2024.
APA
Pusep, Y. A., Silva, M. T. O., Fernandez, J. R. L., Chitta, V. A., Leite, J. R., Frey, T., et al. (2002). Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers. Journal of Applied Physics, 91( 9), 6197-6199. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
NLM
Pusep YA, Silva MTO, Fernandez JRL, Chitta VA, Leite JR, Frey T, As DJ, Schikora D, Lischka K. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 6197-6199.[citado 2024 nov. 13 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
Vancouver
Pusep YA, Silva MTO, Fernandez JRL, Chitta VA, Leite JR, Frey T, As DJ, Schikora D, Lischka K. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 6197-6199.[citado 2024 nov. 13 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
Artigo de periodico
Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces (2001)
Martini, S.; Quivy, A. A.; Tabata, A; Leite, J. R.
Source: Journal of Applied Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MICROSCOPIA ELETRÔNICA, ESTRUTURA ELETRÔNICA, FOTOLUMINESCÊNCIA, SUPERFÍCIE FÍSICA, TERMODINÂMICA
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ABNT
MARTINI, S. et al. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, v. 90, n. 5, p. 2280-2289, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1389336. Acesso em: 13 nov. 2024.
APA
Martini, S., Quivy, A. A., Tabata, A., & Leite, J. R. (2001). Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces. Journal of Applied Physics, 90( 5), 2280-2289. doi:10.1063/1.1389336
NLM
Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.1389336
Vancouver
Martini S, Quivy AA, Tabata A, Leite JR. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces [Internet]. Journal of Applied Physics. 2001 ; 90( 5): 2280-2289.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.1389336
Artigo de periodico
Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures (2001)
Frey, T; As, D J; Bartels, M; Pawlis, A; Tabata, A; Fernandez, J R L; Silva, M T O; Leite, J. R.; Haug, C; Brenn, R
Source: Journal of Applied Physics. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA MOLECULAR
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ABNT
FREY, T et al. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures. Journal of Applied Physics, v. 89, n. 5, p. 2631-2634, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1345858. Acesso em: 13 nov. 2024.
APA
Frey, T., As, D. J., Bartels, M., Pawlis, A., Tabata, A., Fernandez, J. R. L., et al. (2001). Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures. Journal of Applied Physics, 89( 5), 2631-2634. doi:10.1063/1.1345858
NLM
Frey T, As DJ, Bartels M, Pawlis A, Tabata A, Fernandez JRL, Silva MTO, Leite JR, Haug C, Brenn R. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures [Internet]. Journal of Applied Physics. 2001 ; 89( 5): 2631-2634.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.1345858
Vancouver
Frey T, As DJ, Bartels M, Pawlis A, Tabata A, Fernandez JRL, Silva MTO, Leite JR, Haug C, Brenn R. Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures [Internet]. Journal of Applied Physics. 2001 ; 89( 5): 2631-2634.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.1345858
Artigo de periodico
Temperature dependence of optical transitions in AlGaAs (2001)
Lourenço, S A; Dias, I F L; Duarte, J L; Laureto, E; Meneses, E A; Leite, J. R.; Mazzaro, I
Source: Journal of Applied Physics. Unidade: IF
Subjects: FOTOLUMINESCÊNCIA, ÓPTICA, SEMICONDUTORES, DIELÉTRICOS
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ABNT
LOURENÇO, S A et al. Temperature dependence of optical transitions in AlGaAs. Journal of Applied Physics, v. 89, n. 11, p. 6159-6164, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1367875. Acesso em: 13 nov. 2024.
APA
Lourenço, S. A., Dias, I. F. L., Duarte, J. L., Laureto, E., Meneses, E. A., Leite, J. R., & Mazzaro, I. (2001). Temperature dependence of optical transitions in AlGaAs. Journal of Applied Physics, 89( 11), 6159-6164. doi:10.1063/1.1367875
NLM
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Meneses EA, Leite JR, Mazzaro I. Temperature dependence of optical transitions in AlGaAs [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 6159-6164.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.1367875
Vancouver
Lourenço SA, Dias IFL, Duarte JL, Laureto E, Meneses EA, Leite JR, Mazzaro I. Temperature dependence of optical transitions in AlGaAs [Internet]. Journal of Applied Physics. 2001 ; 89( 11): 6159-6164.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.1367875
Artigo de periodico
Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures (2000)
Pusep, Yuri A ; Silva, M. T. O.; Galzerani, J. C.; Rodrigues, S. C. P.; Scolfaro, L. M. R.; Lima, A. P.; Quivy, A. A.; Leite, J. R.; Moshegov, N. T.; Basmaji, Pierre
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
PUSEP, Yuri A et al. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 13 nov. 2024.
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097
NLM
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.372097
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.372097
Artigo de periodico
Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures (2000)
Pusep, Yuri A ; Silva, M T O; Galzerani, J C; Rodrigues, S C P; Scolfaro, Luisa Maria Ribeiro; Lima, A. P.; Quivy, A. A.; Leite, J. R.; Moshegov, N T; Basmaji, P
Source: Journal of Applied Physics. Unidades: IF, IFSC
Assunto: FÍSICA
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ABNT
PUSEP, Yuri A et al. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 13 nov. 2024.
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097
NLM
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.372097
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.372097
Artigo de periodico
Comparative raman studies of cubic and hexagonal gan epitaxial layers (1996)
Tabata, A; Enderlein, R; Leite, J. R.; Silva, S W; Galzerani, J C; Schikora, D; Kloidt, M; Lischka, K
Source: Journal of Applied Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
TABATA, A et al. Comparative raman studies of cubic and hexagonal gan epitaxial layers. Journal of Applied Physics, v. 79, n. 8 , p. 4137-9, 1996Tradução . . Disponível em: https://doi.org/10.1063/1.361778. Acesso em: 13 nov. 2024.
APA
Tabata, A., Enderlein, R., Leite, J. R., Silva, S. W., Galzerani, J. C., Schikora, D., et al. (1996). Comparative raman studies of cubic and hexagonal gan epitaxial layers. Journal of Applied Physics, 79( 8 ), 4137-9. doi:10.1063/1.361778
NLM
Tabata A, Enderlein R, Leite JR, Silva SW, Galzerani JC, Schikora D, Kloidt M, Lischka K. Comparative raman studies of cubic and hexagonal gan epitaxial layers [Internet]. Journal of Applied Physics. 1996 ;79( 8 ): 4137-9.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.361778
Vancouver
Tabata A, Enderlein R, Leite JR, Silva SW, Galzerani JC, Schikora D, Kloidt M, Lischka K. Comparative raman studies of cubic and hexagonal gan epitaxial layers [Internet]. Journal of Applied Physics. 1996 ;79( 8 ): 4137-9.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1063/1.361778
Artigo de periodico
Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC' (1996)
Teles, L. K.; Scolfaro, L M R; Enderlein, R; Leite, J. R.; Josiek, A; Schikora, D; Lischka, K
Source: Journal of Applied Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
TELES, L. K. et al. Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics, v. 80, n. 11, p. 6322, 1996Tradução . . Acesso em: 13 nov. 2024.
APA
Teles, L. K., Scolfaro, L. M. R., Enderlein, R., Leite, J. R., Josiek, A., Schikora, D., & Lischka, K. (1996). Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics, 80( 11), 6322.
NLM
Teles LK, Scolfaro LMR, Enderlein R, Leite JR, Josiek A, Schikora D, Lischka K. Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics. 1996 ;80( 11): 6322.[citado 2024 nov. 13 ]
Vancouver
Teles LK, Scolfaro LMR, Enderlein R, Leite JR, Josiek A, Schikora D, Lischka K. Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics. 1996 ;80( 11): 6322.[citado 2024 nov. 13 ]

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