Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient (2003)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1063/1.1586953
- Subjects: ESTRUTURA ELETRÔNICA; FOTOLUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 94, n. 3, p. 1787-1794, 2003
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SALES, F V de et al. Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient. Journal of Applied Physics, v. 94, n. 3, p. 1787-1794, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1586953. Acesso em: 19 out. 2024. -
APA
Sales, F. V. de, Cruz, J. M. R., Silva, S. W. da, Soler, M. A. G., Morais, P. C. de, Silva, M. J. da, et al. (2003). Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient. Journal of Applied Physics, 94( 3), 1787-1794. doi:10.1063/1.1586953 -
NLM
Sales FV de, Cruz JMR, Silva SW da, Soler MAG, Morais PC de, Silva MJ da, Quivy AA, Leite JR. Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient [Internet]. Journal of Applied Physics. 2003 ; 94( 3): 1787-1794.[citado 2024 out. 19 ] Available from: https://doi.org/10.1063/1.1586953 -
Vancouver
Sales FV de, Cruz JMR, Silva SW da, Soler MAG, Morais PC de, Silva MJ da, Quivy AA, Leite JR. Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient [Internet]. Journal of Applied Physics. 2003 ; 94( 3): 1787-1794.[citado 2024 out. 19 ] Available from: https://doi.org/10.1063/1.1586953 - Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
- Carbon doping of GaAs and AlGaAs layers grown on (100) and (311) substrates by molecular beam epitaxy
- Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
- Crescimento e caracterizacao optica de heteroestrutura de 'AL IND.X'ga ind.1-x''as' / 'ga''as' E 'in ind.Y''ga ind.1-y''as' / 'ga''as'
- Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells
- Optimization of MBE-grown of distributed Bragg reflectors for the fabrication optical devices
- Fabrication of indenpendent contacts to two closely spaced delta-doped GaAs layers
- Step-bunching instability in InGaAs/GaAs quantum wells grown on GaAs(001) vicinal surfaces by molecular beam epitaxy
Informações sobre o DOI: 10.1063/1.1586953 (Fonte: oaDOI API)
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