Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures (2000)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF ; BASMAJI, PIERRE - IFSC
- Unidades: IF; IFSC
- DOI: 10.1063/1.372097
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 87, n. 4, p. 1825-1831, 2000
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
PUSEP, Yuri A et al. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 28 jan. 2026. -
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097 -
NLM
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2026 jan. 28 ] Available from: https://doi.org/10.1063/1.372097 -
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2026 jan. 28 ] Available from: https://doi.org/10.1063/1.372097 - Estudo por espectroscopia raman da interacao eletron-fonon tipo-fano em super-redes de 'GA''AS' com dopagem-delta
- Optical properties of GaAs/AlGaAs selectively doped quantum well structures
- Raman study of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures
- Observation of the plateau-behavior of vertical transport in 'GA''AS' - 'GAMA' doping by raman studies
- Electrical conductivity of 'GAMA'-doping superlattices parallel to the growth direction
- Lineshape analysis of photoreflectance spectra from 'In IND.0.15' 'Ga IND. 0.85' As/GaAs quantum wells
- Investigation of the vertical transport in 'GA''AS'-'DELTA'-doping sls by raman studies of coupled plasmon phonon modes
- Raman study of fano-like electron-phonon coupling in 'DELTA'-doping 'GA''AS' superlattices
- Fano-like electron-phonon interference in delta-doping GaAs superlattices
- Photo and electroreflectance spectra from spatially inhomogeneous heterostructures calculated by means of a new method
Informações sobre o DOI: 10.1063/1.372097 (Fonte: oaDOI API)
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