ReP USP - Resultado da busca

Artigo de periodico
Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction (2023)
Santos, Thales Borrely dos ; Alzeidan, Ahmad ; Lima, Marcelo Delmondes de; Jacobsen, Gabriel Marques ; Huang, T Y; Yang, Y C; Cantalice, Tiago Fernandes de ; Goldman, R S; Teodoro, M D; Quivy, Alain André
Source: Solar Energy Materials and Solar Cells. Unidade: IF
Assunto: EPITAXIA POR FEIXE MOLECULAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Thales Borrely dos et al. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction. Solar Energy Materials and Solar Cells, v. 254, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.solmat.2023.112281. Acesso em: 10 ago. 2024.
APA
Santos, T. B. dos, Alzeidan, A., Lima, M. D. de, Jacobsen, G. M., Huang, T. Y., Yang, Y. C., et al. (2023). Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction. Solar Energy Materials and Solar Cells, 254. doi:10.1016/j.solmat.2023.112281
NLM
Santos TB dos, Alzeidan A, Lima MD de, Jacobsen GM, Huang TY, Yang YC, Cantalice TF de, Goldman RS, Teodoro MD, Quivy AA. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction [Internet]. Solar Energy Materials and Solar Cells. 2023 ; 254[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/j.solmat.2023.112281
Vancouver
Santos TB dos, Alzeidan A, Lima MD de, Jacobsen GM, Huang TY, Yang YC, Cantalice TF de, Goldman RS, Teodoro MD, Quivy AA. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction [Internet]. Solar Energy Materials and Solar Cells. 2023 ; 254[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/j.solmat.2023.112281
Artigo de periodico
Statistical modeling of epitaxial thin films of an intrinsic antiferromagnetic topological insulator (2022)
Penacchio, Rafaela Felix da Silva ; Fornari, Celso I.; Camillo, Yorí G.; Kagerer, Philipp; Buchberger, Sebastian; Kamp, Martin; Bentmann, Hendrik; Reinert, Friedrich; Morelhão, Sergio Luiz
Source: Thin Solid Films. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, FILMES FINOS, DIFRAÇÃO POR RAIOS X, MATERIAIS NANOESTRUTURADOS, EPITAXIA POR FEIXE MOLECULAR, CAMPO MAGNÉTICO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PENACCHIO, Rafaela Felix da Silva et al. Statistical modeling of epitaxial thin films of an intrinsic antiferromagnetic topological insulator. Thin Solid Films, v. 750, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.tsf.2022.139183. Acesso em: 10 ago. 2024.
APA
Penacchio, R. F. da S., Fornari, C. I., Camillo, Y. G., Kagerer, P., Buchberger, S., Kamp, M., et al. (2022). Statistical modeling of epitaxial thin films of an intrinsic antiferromagnetic topological insulator. Thin Solid Films, 750. doi:10.1016/j.tsf.2022.139183
NLM
Penacchio RF da S, Fornari CI, Camillo YG, Kagerer P, Buchberger S, Kamp M, Bentmann H, Reinert F, Morelhão SL. Statistical modeling of epitaxial thin films of an intrinsic antiferromagnetic topological insulator [Internet]. Thin Solid Films. 2022 ; 750[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/j.tsf.2022.139183
Vancouver
Penacchio RF da S, Fornari CI, Camillo YG, Kagerer P, Buchberger S, Kamp M, Bentmann H, Reinert F, Morelhão SL. Statistical modeling of epitaxial thin films of an intrinsic antiferromagnetic topological insulator [Internet]. Thin Solid Films. 2022 ; 750[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/j.tsf.2022.139183
Artigo de periodico
Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy (2021)
Alhassan, Sultan; Souza, Daniele de; Alhassni, Amra; Almunyif, Amjad; Alotaibi, Saud; Almalki, Abdulaziz; Alhuwayz, Maryam; Kazakov, Igor P.; Klekovkin, Alexey V.; Tsekhosh, Vladimir I.; Likhachev, Igor A.; Pashaev, Elkhan M.; Souto, Sérgio Paulo Amaral ; Gobato, Yara Galvao ; Al Saqri, N.; Galeti, Helder Vinícius Avanço; Al Mashary, Faisal; Albalawi, Hindi; Alwadai, Norah; Henini, Mohamed
Source: Journal of Alloys and Compounds. Unidade: FZEA
Subjects: SEMICONDUTORES, EPITAXIA POR FEIXE MOLECULAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALHASSAN, Sultan et al. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy. Journal of Alloys and Compounds, v. 885, p. 1-11, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.jallcom.2021.161019. Acesso em: 10 ago. 2024.
APA
Alhassan, S., Souza, D. de, Alhassni, A., Almunyif, A., Alotaibi, S., Almalki, A., et al. (2021). Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy. Journal of Alloys and Compounds, 885, 1-11. doi:10.1016/j.jallcom.2021.161019
NLM
Alhassan S, Souza D de, Alhassni A, Almunyif A, Alotaibi S, Almalki A, Alhuwayz M, Kazakov IP, Klekovkin AV, Tsekhosh VI, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Al Saqri N, Galeti HVA, Al Mashary F, Albalawi H, Alwadai N, Henini M. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy [Internet]. Journal of Alloys and Compounds. 2021 ; 885 1-11.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/j.jallcom.2021.161019
Vancouver
Alhassan S, Souza D de, Alhassni A, Almunyif A, Alotaibi S, Almalki A, Alhuwayz M, Kazakov IP, Klekovkin AV, Tsekhosh VI, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Al Saqri N, Galeti HVA, Al Mashary F, Albalawi H, Alwadai N, Henini M. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy [Internet]. Journal of Alloys and Compounds. 2021 ; 885 1-11.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/j.jallcom.2021.161019
Artigo de periodico
Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates (2021)
Souza, Daniele de; Alhassan, Sultan; Alotaibi, Saud; Alhassni, Amra; Almunyif, Amjad; Albalawi, Hindi; Kazakov, Igor P.; Klekovkin, Alexey V.; ZinovEv, Sergey A; Likhachev, Igor A.; Pashaev, Elkhan M.; Souto, Sérgio Paulo Amaral ; Gobato, Yara Galvao ; Galeti, Helder Vinícius Avanço; Henini, Mohamed
Source: Semiconductor Science and Technology. Unidade: FZEA
Subjects: SEMICONDUTORES, EPITAXIA POR FEIXE MOLECULAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SOUZA, Daniele de et al. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 36, n. 7, p. 1-12, 2021Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/abf3d1. Acesso em: 10 ago. 2024.
APA
Souza, D. de, Alhassan, S., Alotaibi, S., Alhassni, A., Almunyif, A., Albalawi, H., et al. (2021). Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 36( 7), 1-12. doi:10.1088/1361-6641/abf3d1
NLM
Souza D de, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Albalawi H, Kazakov IP, Klekovkin AV, ZinovEv SA, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Galeti HVA, Henini M. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2021 ; 36( 7): 1-12.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1088/1361-6641/abf3d1
Vancouver
Souza D de, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Albalawi H, Kazakov IP, Klekovkin AV, ZinovEv SA, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Galeti HVA, Henini M. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2021 ; 36( 7): 1-12.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1088/1361-6641/abf3d1
Artigo de periodico
Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer (2020)
Santos, Tiago G.; Vieira, Gustavo S.; Delfino, Cristian A.; Tanaka, Roberto Y.; Abe, Nancy M.; Passaro, Angelo; Fernandes, Fernando M.; Quivy, Alain A.
Source: Sensors and Actuators A: Physical. Unidade: IF
Subjects: EPITAXIA POR FEIXE MOLECULAR, SEMICONDUTIVIDADE, FÍSICA MODERNA, FOTODETECTORES, RADIAÇÃO INFRAVERMELHA, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Tiago G. et al. Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer. Sensors and Actuators A: Physical, v. 301, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.sna.2019.111725. Acesso em: 10 ago. 2024.
APA
Santos, T. G., Vieira, G. S., Delfino, C. A., Tanaka, R. Y., Abe, N. M., Passaro, A., et al. (2020). Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer. Sensors and Actuators A: Physical, 301. doi:10.1016/j.sna.2019.111725
NLM
Santos TG, Vieira GS, Delfino CA, Tanaka RY, Abe NM, Passaro A, Fernandes FM, Quivy AA. Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer [Internet]. Sensors and Actuators A: Physical. 2020 ; 301[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/j.sna.2019.111725
Vancouver
Santos TG, Vieira GS, Delfino CA, Tanaka RY, Abe NM, Passaro A, Fernandes FM, Quivy AA. Effect of electric field non-uniformity on the differences between I-V characteristics of QWIP devices fabricated on the same wafer [Internet]. Sensors and Actuators A: Physical. 2020 ; 301[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/j.sna.2019.111725
Artigo de periodico
Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors (2020)
Claro, M. S.; Stroppa, D. G.; Silva, Euzi Conceição Fernandes da ; Quivy, Alain André
Source: Sensors and Actuators A: Physical. Unidade: IF
Subjects: FÍSICA MODERNA, EPITAXIA POR FEIXE MOLECULAR, FOTODETECTORES, RADIAÇÃO INFRAVERMELHA, SEMICONDUTIVIDADE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CLARO, M. S. et al. Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors. Sensors and Actuators A: Physical, v. 315, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.sna.2020.112262. Acesso em: 10 ago. 2024.
APA
Claro, M. S., Stroppa, D. G., Silva, E. C. F. da, & Quivy, A. A. (2020). Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors. Sensors and Actuators A: Physical, 315. doi:10.1016/j.sna.2020.112262
NLM
Claro MS, Stroppa DG, Silva ECF da, Quivy AA. Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors [Internet]. Sensors and Actuators A: Physical. 2020 ; 315[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/j.sna.2020.112262
Vancouver
Claro MS, Stroppa DG, Silva ECF da, Quivy AA. Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors [Internet]. Sensors and Actuators A: Physical. 2020 ; 315[citado 2024 ago. 10 ] Available from: https://doi.org/10.1016/j.sna.2020.112262
Artigo de periodico
Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films (2020)
Fornari, Celso I; Morelhão, Sergio Luiz
Source: Journal of Physical Chemistry C. Unidade: IF
Subjects: EURÓPIO, EPITAXIA POR FEIXE MOLECULAR, DIFRAÇÃO POR RAIOS X, MICROSCOPIA ELETRÔNICA DE VARREDURA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FORNARI, Celso I e MORELHÃO, Sergio Luiz. Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films. Journal of Physical Chemistry C, v. 124, n. 29, p. 16048–16057, 2020Tradução . . Disponível em: https://doi.org/10.1021/acs.jpcc.0c05077. Acesso em: 10 ago. 2024.
APA
Fornari, C. I., & Morelhão, S. L. (2020). Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films. Journal of Physical Chemistry C, 124( 29), 16048–16057. doi:10.1021/acs.jpcc.0c05077
NLM
Fornari CI, Morelhão SL. Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films [Internet]. Journal of Physical Chemistry C. 2020 ; 124( 29): 16048–16057.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1021/acs.jpcc.0c05077
Vancouver
Fornari CI, Morelhão SL. Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films [Internet]. Journal of Physical Chemistry C. 2020 ; 124( 29): 16048–16057.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1021/acs.jpcc.0c05077
Artigo de periodico
Molecular beam epitaxy of antiferromagnetic (MnBi2Te4)(Bi2Te3) thin films on BaF2 (111) (2020)
Kagerer, Philipp ; Fornari, Celso Israel ; Buchberger, S.; Morelhao, Sergio L.; Vidal, R. C.; Tcakaev, Abdul-Vakhab ; Zabolotnyy, V.; Weschke, E.; Hinkov, Vladimir ; Kamp, Martin ; Büchner, B.; Isaeva, Anna ; Bentmann, H.; Reinert, F.
Source: Journal of Applied Physics. Unidade: IF
Subjects: FÍSICA DO ESTADO SÓLIDO, CRISTALOGRAFIA DE RAIOS X, FILMES FINOS, EPITAXIA POR FEIXE MOLECULAR, MICROSCOPIA ELETRÔNICA DE VARREDURA, MICROSCOPIA DE FORÇA ATÔMICA, ESPECTROSCOPIA DE RAIO X, DIFRAÇÃO POR RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
KAGERER, Philipp et al. Molecular beam epitaxy of antiferromagnetic (MnBi2Te4)(Bi2Te3) thin films on BaF2 (111). Journal of Applied Physics, v. 128, n. 13, 2020Tradução . . Disponível em: https://doi.org/10.1063/5.0025933. Acesso em: 10 ago. 2024.
APA
Kagerer, P., Fornari, C. I., Buchberger, S., Morelhao, S. L., Vidal, R. C., Tcakaev, A. -V., et al. (2020). Molecular beam epitaxy of antiferromagnetic (MnBi2Te4)(Bi2Te3) thin films on BaF2 (111). Journal of Applied Physics, 128( 13). doi:10.1063/5.0025933
NLM
Kagerer P, Fornari CI, Buchberger S, Morelhao SL, Vidal RC, Tcakaev A-V, Zabolotnyy V, Weschke E, Hinkov V, Kamp M, Büchner B, Isaeva A, Bentmann H, Reinert F. Molecular beam epitaxy of antiferromagnetic (MnBi2Te4)(Bi2Te3) thin films on BaF2 (111) [Internet]. Journal of Applied Physics. 2020 ; 128( 13):[citado 2024 ago. 10 ] Available from: https://doi.org/10.1063/5.0025933
Vancouver
Kagerer P, Fornari CI, Buchberger S, Morelhao SL, Vidal RC, Tcakaev A-V, Zabolotnyy V, Weschke E, Hinkov V, Kamp M, Büchner B, Isaeva A, Bentmann H, Reinert F. Molecular beam epitaxy of antiferromagnetic (MnBi2Te4)(Bi2Te3) thin films on BaF2 (111) [Internet]. Journal of Applied Physics. 2020 ; 128( 13):[citado 2024 ago. 10 ] Available from: https://doi.org/10.1063/5.0025933
Artigo de periodico
Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators (2019)
Morelhão, Sérgio L. ; Kycia, Stefan W.; Netzke, Samuel; Fornari, Celso I.; Rappl, Paulo H. O.; Abramof, Eduardo
Source: The Journal of Physical Chemistry C. Unidade: IF
Subjects: RADIAÇÃO SINCROTRON, SEMICONDUTORES (FÍSICO-QUÍMICA), MATERIAIS NANOESTRUTURADOS, EPITAXIA POR FEIXE MOLECULAR, CRISTALOGRAFIA, BISMUTO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MORELHÃO, Sérgio L. et al. Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators. The Journal of Physical Chemistry C, v. 123, n. 40, p. 24818-24825, 2019Tradução . . Disponível em: https://doi-org.ez67.periodicos.capes.gov.br/10.1021/acs.jpcc.9b05377. Acesso em: 10 ago. 2024.
APA
Morelhão, S. L., Kycia, S. W., Netzke, S., Fornari, C. I., Rappl, P. H. O., & Abramof, E. (2019). Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators. The Journal of Physical Chemistry C, 123( 40), 24818-24825. doi:10.1021/acs.jpcc.9b05377
NLM
Morelhão SL, Kycia SW, Netzke S, Fornari CI, Rappl PHO, Abramof E. Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators [Internet]. The Journal of Physical Chemistry C. 2019 ; 123( 40): 24818-24825.[citado 2024 ago. 10 ] Available from: https://doi-org.ez67.periodicos.capes.gov.br/10.1021/acs.jpcc.9b05377
Vancouver
Morelhão SL, Kycia SW, Netzke S, Fornari CI, Rappl PHO, Abramof E. Dynamics of Defects in van der Waals Epitaxy of Bismuth Telluride Topological Insulators [Internet]. The Journal of Physical Chemistry C. 2019 ; 123( 40): 24818-24825.[citado 2024 ago. 10 ] Available from: https://doi-org.ez67.periodicos.capes.gov.br/10.1021/acs.jpcc.9b05377
Artigo de periodico
Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing (2012)
Keizer, J. G; Henriques, André Bohomoletz; Maia, A D B; Quivy, A. A.; Koenraad, P. M
Source: APPLIED PHYSICS LETTERS. Unidade: IF
Subjects: EPITAXIA POR FEIXE MOLECULAR, FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
KEIZER, J. G et al. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing. APPLIED PHYSICS LETTERS, v. 101 24, p. 243113, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4770371. Acesso em: 10 ago. 2024.
APA
Keizer, J. G., Henriques, A. B., Maia, A. D. B., Quivy, A. A., & Koenraad, P. M. (2012). Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing. APPLIED PHYSICS LETTERS, 101 24, 243113. doi:10.1063/1.4770371
NLM
Keizer JG, Henriques AB, Maia ADB, Quivy AA, Koenraad PM. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing [Internet]. APPLIED PHYSICS LETTERS. 2012 ;101 24 243113.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1063/1.4770371
Vancouver
Keizer JG, Henriques AB, Maia ADB, Quivy AA, Koenraad PM. Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing [Internet]. APPLIED PHYSICS LETTERS. 2012 ;101 24 243113.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1063/1.4770371
Artigo de periodico
Optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe (2010)
Kaminski, B; Lafrentz, M; Pisarev, R V; Yakovlev, D R; Pavlov, V V; Lukoshkin, V A; Henriques, André Bohomoletz ; Springholz, G; Bauer, G; Abramof, E; Rappl, P H; Bayer, M
Source: Physical Review B. Unidade: IF
Subjects: SEMICONDUTORES, EPITAXIA POR FEIXE MOLECULAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
KAMINSKI, B et al. Optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe. Physical Review B, v. 81, n. 15, p. 155201/1-155201/15, 2010Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.81.155201. Acesso em: 10 ago. 2024.
APA
Kaminski, B., Lafrentz, M., Pisarev, R. V., Yakovlev, D. R., Pavlov, V. V., Lukoshkin, V. A., et al. (2010). Optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe. Physical Review B, 81( 15), 155201/1-155201/15. doi:https://doi.org/10.1103/PhysRevB.81.155201
NLM
Kaminski B, Lafrentz M, Pisarev RV, Yakovlev DR, Pavlov VV, Lukoshkin VA, Henriques AB, Springholz G, Bauer G, Abramof E, Rappl PH, Bayer M. Optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe [Internet]. Physical Review B. 2010 ; 81( 15): 155201/1-155201/15.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1103/PhysRevB.81.155201
Vancouver
Kaminski B, Lafrentz M, Pisarev RV, Yakovlev DR, Pavlov VV, Lukoshkin VA, Henriques AB, Springholz G, Bauer G, Abramof E, Rappl PH, Bayer M. Optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe [Internet]. Physical Review B. 2010 ; 81( 15): 155201/1-155201/15.[citado 2024 ago. 10 ] Available from: https://doi.org/10.1103/PhysRevB.81.155201

USP Schools

ReP

Filtros

Authors

USP affiliated authors

Date published

Subjects

Source title

Funding Agencies

Non normalized affiliation

Countries of institutions of collaboration