Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy (2021)
- Authors:
- Alhassan, Sultan
- Souza, Daniele de - Universidade Federal de São Carlos (UFSCar)
- Alhassni, Amra
- Almunyif, Amjad
- Alotaibi, Saud
- Almalki, Abdulaziz
- Alhuwayz, Maryam
- Kazakov, Igor P.
- Klekovkin, Alexey V.
- Tsekhosh, Vladimir I.
- Likhachev, Igor A.
- Pashaev, Elkhan M.
- Souto, Sérgio Paulo Amaral
- Gobato, Yara Galvao - Universidade Federal de São Carlos (UFSCar)
- Al Saqri, N.
- Galeti, Helder Vinícius Avanço - Universidade Federal de São Carlos (UFSCar)
- Al Mashary, Faisal
- Albalawi, Hindi
- Alwadai, Norah
- Henini, Mohamed
- Autor USP: SOUTO, SERGIO PAULO AMARAL - FZEA
- Unidade: FZEA
- DOI: 10.1016/j.jallcom.2021.161019
- Subjects: SEMICONDUTORES; EPITAXIA POR FEIXE MOLECULAR
- Keywords: Dilute bismides; Electrical properties; Optical properties; Doped semiconductor; Structural disorde; Defects
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Alloys and Compounds
- ISSN: 0925-8388
- Volume/Número/Paginação/Ano: v. 885, art. 161019, p. 1-11, 2021
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
- Licença: other-oa
-
ABNT
ALHASSAN, Sultan et al. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy. Journal of Alloys and Compounds, v. 885, p. 1-11, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.jallcom.2021.161019. Acesso em: 03 jan. 2026. -
APA
Alhassan, S., Souza, D. de, Alhassni, A., Almunyif, A., Alotaibi, S., Almalki, A., et al. (2021). Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy. Journal of Alloys and Compounds, 885, 1-11. doi:10.1016/j.jallcom.2021.161019 -
NLM
Alhassan S, Souza D de, Alhassni A, Almunyif A, Alotaibi S, Almalki A, Alhuwayz M, Kazakov IP, Klekovkin AV, Tsekhosh VI, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Al Saqri N, Galeti HVA, Al Mashary F, Albalawi H, Alwadai N, Henini M. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy [Internet]. Journal of Alloys and Compounds. 2021 ; 885 1-11.[citado 2026 jan. 03 ] Available from: https://doi.org/10.1016/j.jallcom.2021.161019 -
Vancouver
Alhassan S, Souza D de, Alhassni A, Almunyif A, Alotaibi S, Almalki A, Alhuwayz M, Kazakov IP, Klekovkin AV, Tsekhosh VI, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Al Saqri N, Galeti HVA, Al Mashary F, Albalawi H, Alwadai N, Henini M. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy [Internet]. Journal of Alloys and Compounds. 2021 ; 885 1-11.[citado 2026 jan. 03 ] Available from: https://doi.org/10.1016/j.jallcom.2021.161019 - Modificações na estrutura eletrônica dos filmes 'C IND. x''N IND. 1-x': H estudados por fotoemissão de elétrons
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Informações sobre o DOI: 10.1016/j.jallcom.2021.161019 (Fonte: oaDOI API)
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