Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy (2021)
- Authors:
- Alhassan, Sultan
- Souza, Daniele de - Universidade Federal de São Carlos (UFSCar)
- Alhassni, Amra
- Almunyif, Amjad
- Alotaibi, Saud
- Almalki, Abdulaziz
- Alhuwayz, Maryam
- Kazakov, Igor P.
- Klekovkin, Alexey V.
- Tsekhosh, Vladimir I.
- Likhachev, Igor A.
- Pashaev, Elkhan M.
- Souto, Sérgio Paulo Amaral
- Gobato, Yara Galvao - Universidade Federal de São Carlos (UFSCar)
- Al Saqri, N.
- Galeti, Helder Vinícius Avanço - Universidade Federal de São Carlos (UFSCar)
- Al Mashary, Faisal
- Albalawi, Hindi
- Alwadai, Norah
- Henini, Mohamed
- Autor USP: SOUTO, SERGIO PAULO AMARAL - FZEA
- Unidade: FZEA
- DOI: 10.1016/j.jallcom.2021.161019
- Subjects: SEMICONDUTORES; EPITAXIA POR FEIXE MOLECULAR
- Keywords: Dilute bismides; Electrical properties; Optical properties; Doped semiconductor; Structural disorde; Defects
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Alloys and Compounds
- ISSN: 0925-8388
- Volume/Número/Paginação/Ano: v. 885, art. 161019, p. 1-11, 2021
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
- Licença: other-oa
-
ABNT
ALHASSAN, Sultan et al. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy. Journal of Alloys and Compounds, v. 885, p. 1-11, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.jallcom.2021.161019. Acesso em: 24 abr. 2024. -
APA
Alhassan, S., Souza, D. de, Alhassni, A., Almunyif, A., Alotaibi, S., Almalki, A., et al. (2021). Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy. Journal of Alloys and Compounds, 885, 1-11. doi:10.1016/j.jallcom.2021.161019 -
NLM
Alhassan S, Souza D de, Alhassni A, Almunyif A, Alotaibi S, Almalki A, Alhuwayz M, Kazakov IP, Klekovkin AV, Tsekhosh VI, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Al Saqri N, Galeti HVA, Al Mashary F, Albalawi H, Alwadai N, Henini M. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy [Internet]. Journal of Alloys and Compounds. 2021 ; 885 1-11.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1016/j.jallcom.2021.161019 -
Vancouver
Alhassan S, Souza D de, Alhassni A, Almunyif A, Alotaibi S, Almalki A, Alhuwayz M, Kazakov IP, Klekovkin AV, Tsekhosh VI, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Al Saqri N, Galeti HVA, Al Mashary F, Albalawi H, Alwadai N, Henini M. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy [Internet]. Journal of Alloys and Compounds. 2021 ; 885 1-11.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1016/j.jallcom.2021.161019 - Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy: structural, optical and electrical properties
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Informações sobre o DOI: 10.1016/j.jallcom.2021.161019 (Fonte: oaDOI API)
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