Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors (2020)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1016/j.sna.2020.112262
- Subjects: FÍSICA MODERNA; EPITAXIA POR FEIXE MOLECULAR; FOTODETECTORES; RADIAÇÃO INFRAVERMELHA; SEMICONDUTIVIDADE
- Keywords: Photodetector; Quantum dot; Photovoltaic effect; Molecular beam epitaxy; InAlAs
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título: Sensors and Actuators A: Physical
- ISSN: 0924-4247
- Volume/Número/Paginação/Ano: v. 315, 2020, número do artigo: 112262
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
CLARO, M. S. et al. Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors. Sensors and Actuators A: Physical, v. 315, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.sna.2020.112262. Acesso em: 01 mar. 2026. -
APA
Claro, M. S., Stroppa, D. G., Silva, E. C. F. da, & Quivy, A. A. (2020). Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors. Sensors and Actuators A: Physical, 315. doi:10.1016/j.sna.2020.112262 -
NLM
Claro MS, Stroppa DG, Silva ECF da, Quivy AA. Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors [Internet]. Sensors and Actuators A: Physical. 2020 ; 315[citado 2026 mar. 01 ] Available from: https://doi.org/10.1016/j.sna.2020.112262 -
Vancouver
Claro MS, Stroppa DG, Silva ECF da, Quivy AA. Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors [Internet]. Sensors and Actuators A: Physical. 2020 ; 315[citado 2026 mar. 01 ] Available from: https://doi.org/10.1016/j.sna.2020.112262 - Mid-Infrared (3-5 µm) photodetection in AlGaAs/GaAs QWIPs using photo-induced noise
- Growth, processing and testing of infrared photodetectors based on quantum dots
- The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots
- High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors
- Estudos magnetico-oticos das transicoes excitonicas de pocos quanticos de 'GA''AS' / 'GAALAS' com modulacao de dopagem tipo n
- Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors
- Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces
- In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat
- High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy
- Energy levels for lens-shaped self-assembled quantum dots heterostructures
Informações sobre o DOI: 10.1016/j.sna.2020.112262 (Fonte: oaDOI API)
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