Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e COLINGE, Jean-Pierre. Theoretical and experimental analysis of the substrate effect on accumulation mode p-channel soi mosfet at room and at liquid nitrogen temperature. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 02 maio 2026.APA
Pavanello, M. A., Martino, J. A., & Colinge, J. -P. (1996). Theoretical and experimental analysis of the substrate effect on accumulation mode p-channel soi mosfet at room and at liquid nitrogen temperature. In Proceedings. São Paulo: Sbmicro.NLM
Pavanello MA, Martino JA, Colinge J-P. Theoretical and experimental analysis of the substrate effect on accumulation mode p-channel soi mosfet at room and at liquid nitrogen temperature. Proceedings. 1996 ;[citado 2026 maio 02 ]Vancouver
Pavanello MA, Martino JA, Colinge J-P. Theoretical and experimental analysis of the substrate effect on accumulation mode p-channel soi mosfet at room and at liquid nitrogen temperature. Proceedings. 1996 ;[citado 2026 maio 02 ]
