New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets (1996)
- Authors:
- USP affiliated author: MARTINO, JOAO ANTONIO - EP
- School: EP
- Subject: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Proceedings
- Conference title: Conference of the Brazilian Microelectronics Society
-
ABNT
MARTINO, João Antonio; PAVANELLO, Marcelo Antonio. New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. Anais.. Sao Paulo: Sbmicro, 1996. -
APA
Martino, J. A., & Pavanello, M. A. (1996). New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. In Proceedings. Sao Paulo: Sbmicro. -
NLM
Martino JA, Pavanello MA. New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. Proceedings. 1996 ; -
Vancouver
Martino JA, Pavanello MA. New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. Proceedings. 1996 ; - Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
- Extraction of the oxide charge density at front and back interfaces of SOI NMOSFET devices
- Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
- A new method for determination of the oxide charge density at the buried oxide/substrate interface in SOI capacitor
- A novel leakage drain current model for SOI MOSFETs devices at high temperature
- A physically-based continuous model for graded-channel SOI MOSFET
- Transistor soi-nmosfet nao auto-alinhado
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
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