New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets (1996)
- Authors:
- USP affiliated author: MARTINO, JOAO ANTONIO - EP
- School: EP
- Subject: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Proceedings
- Conference title: Conference of the Brazilian Microelectronics Society
-
ABNT
MARTINO, João Antonio; PAVANELLO, Marcelo Antonio. New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. Anais.. Sao Paulo: Sbmicro, 1996. -
APA
Martino, J. A., & Pavanello, M. A. (1996). New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. In Proceedings. Sao Paulo: Sbmicro. -
NLM
Martino JA, Pavanello MA. New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. Proceedings. 1996 ; -
Vancouver
Martino JA, Pavanello MA. New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. Proceedings. 1996 ; - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Caracterização elétrica de dispositivos SOI MOS em baixa temperatura
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
- Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs
- Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities
- Understanding and optimizing the floating body retention in FDSOI UTBOX
- Halo optimization for 0.13 micron SOI CMOS technology
- Analog performance of dynamic threshold voltage SOI MOSFET
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