Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs (2005)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: The Electrochemical Society
- Publisher place: Pennington
- Date published: 2005
- Source:
- Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
GALETI, Milene et al. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 04 ago. 2025. -
APA
Galeti, M., Claeys, C., Martino, J. A., & Simoen, E. (2005). Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society. -
NLM
Galeti M, Claeys C, Martino JA, Simoen E. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 ago. 04 ] -
Vancouver
Galeti M, Claeys C, Martino JA, Simoen E. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 ago. 04 ] - Obtenção da estrutura de perfil de um transistor MOS a partir de parâmetros PSPICE
- Components of the leakage drain current in accumulation-mode SOI pMOSFETs at high temperatures
- A novel simple method to extract the effective LDD doping concentration on fully depleted SOI NMOSFET
- The graded-channel SOI NMOSFET and its potential to analog applications
- CPU didática. (também em CD-Rom)
- Optimization of the twin gate SOI MOSFET
- Método simples para obtenção de variação da carga efetiva no óxido de um SOI-MOSFET em função da radiação. (em CD-Rom)
- Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation
- A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in accumulation-mode P-channel SOI MOSFETs. (em CD-Rom)
- Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET
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