New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets (1996)
- Autores:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Proceedings
- Nome do evento: Conference of the Brazilian Microelectronics Society
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ABNT
MARTINO, João Antonio e PAVANELLO, Marcelo Antonio. New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. 1996, Anais.. Sao Paulo: Sbmicro, 1996. . Acesso em: 18 abr. 2024. -
APA
Martino, J. A., & Pavanello, M. A. (1996). New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. In Proceedings. Sao Paulo: Sbmicro. -
NLM
Martino JA, Pavanello MA. New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. Proceedings. 1996 ;[citado 2024 abr. 18 ] -
Vancouver
Martino JA, Pavanello MA. New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. Proceedings. 1996 ;[citado 2024 abr. 18 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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