Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model (1996)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Proceedings
- Conference titles: Conference of the Brazilian Microelectronics Society
-
ABNT
BELLODI, M; MARTINO, João Antonio; FLANDRE, D. Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model. Anais.. São Paulo: Sbmicro, 1996. -
APA
Bellodi, M., Martino, J. A., & Flandre, D. (1996). Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model. In Proceedings. São Paulo: Sbmicro. -
NLM
Bellodi M, Martino JA, Flandre D. Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model. Proceedings. 1996 ; -
Vancouver
Bellodi M, Martino JA, Flandre D. Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model. Proceedings. 1996 ; - Transistor soi-nmosfet nao auto-alinhado
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Combined l and series resistance extraction of ldd mosfets
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets
- Modelagem do substrato e novos métodos de caracterização elétrica de SOI MOSFET
- A novel leakage drain current model for SOI MOSFETs devices at high temperature
- Components of the leakage current in enhancement-mode SOI nMOSFETs at high temperature. (em CD-Rom)
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
