Theoretical and experimental analysis of the substrate effect on accumulation mode p-channel soi mosfet at room and at liquid nitrogen temperature (1996)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Proceedings
- Conference titles: Conference of the Brazilian Microelectronics Society
-
ABNT
PAVANELLO, Marcelo Antonio; MARTINO, João Antonio; COLINGE, J P. Theoretical and experimental analysis of the substrate effect on accumulation mode p-channel soi mosfet at room and at liquid nitrogen temperature. Anais.. Sao Paulo: Sbmicro, 1996. -
APA
Pavanello, M. A., Martino, J. A., & Colinge, J. P. (1996). Theoretical and experimental analysis of the substrate effect on accumulation mode p-channel soi mosfet at room and at liquid nitrogen temperature. In Proceedings. Sao Paulo: Sbmicro. -
NLM
Pavanello MA, Martino JA, Colinge JP. Theoretical and experimental analysis of the substrate effect on accumulation mode p-channel soi mosfet at room and at liquid nitrogen temperature. Proceedings. 1996 ; -
Vancouver
Pavanello MA, Martino JA, Colinge JP. Theoretical and experimental analysis of the substrate effect on accumulation mode p-channel soi mosfet at room and at liquid nitrogen temperature. Proceedings. 1996 ; - Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
- Transistor soi-nmosfet nao auto-alinhado
- Impact of substrate effect on the fully depleted soi mesfet subthreshold slope at 300k and 77k
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Combined l and series resistance extraction of ldd mosfets
- Influencia da temperatura em transistores soi (silicon on insulator) mosfets
- New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets
- Influence of interface trap density on vertical NW-TFETs with different source composition
- Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs
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