ReP USP - Resultado da busca

Trabalho de evento
New method for inverse-image computation in generating the set of equivalent states (1996)
Teruya, M Y; Wang, Jiang Chau
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
TERUYA, M Y e WANG, Jiang Chau. New method for inverse-image computation in generating the set of equivalent states. 1996, Anais.. Sao Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Teruya, M. Y., & Wang, J. C. (1996). New method for inverse-image computation in generating the set of equivalent states. In Proceedings. Sao Paulo: Sbmicro.
NLM
Teruya MY, Wang JC. New method for inverse-image computation in generating the set of equivalent states. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Teruya MY, Wang JC. New method for inverse-image computation in generating the set of equivalent states. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets (1996)
Martino, João Antonio ; Pavanello, Marcelo Antonio
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
MARTINO, João Antonio e PAVANELLO, Marcelo Antonio. New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. 1996, Anais.. Sao Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Martino, J. A., & Pavanello, M. A. (1996). New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. In Proceedings. Sao Paulo: Sbmicro.
NLM
Martino JA, Pavanello MA. New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Martino JA, Pavanello MA. New method for determination of the fixed charge densities at the buried oxide interfaces in soi mosfets. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Aluminium etching with cc14-n2 plasmas (1996)
Nakazawa, Angela Makie; Verdonck, Patrick Bernard
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
NAKAZAWA, Angela Makie e VERDONCK, Patrick Bernard. Aluminium etching with cc14-n2 plasmas. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Nakazawa, A. M., & Verdonck, P. B. (1996). Aluminium etching with cc14-n2 plasmas. In Proceedings. São Paulo: Sbmicro.
NLM
Nakazawa AM, Verdonck PB. Aluminium etching with cc14-n2 plasmas. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Nakazawa AM, Verdonck PB. Aluminium etching with cc14-n2 plasmas. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Development of double layer structure 1-electrical characterization (1996)
Pereira, Jose Augusto de Alencar Mendes; Torres, Luiz Carlos Molina
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
PEREIRA, Jose Augusto de Alencar Mendes e TORRES, Luiz Carlos Molina. Development of double layer structure 1-electrical characterization. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Pereira, J. A. de A. M., & Torres, L. C. M. (1996). Development of double layer structure 1-electrical characterization. In Proceedings. São Paulo: Sbmicro.
NLM
Pereira JA de AM, Torres LCM. Development of double layer structure 1-electrical characterization. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Pereira JA de AM, Torres LCM. Development of double layer structure 1-electrical characterization. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model (1996)
Bellodi, Marcello; Martino, João Antonio ; Flandre, Denis
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
BELLODI, Marcello e MARTINO, João Antonio e FLANDRE, Denis. Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Bellodi, M., Martino, J. A., & Flandre, D. (1996). Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model. In Proceedings. São Paulo: Sbmicro.
NLM
Bellodi M, Martino JA, Flandre D. Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Bellodi M, Martino JA, Flandre D. Introduction to the soi mosfet dimensions in the high-temperature leakage drain current model. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Isotropic etching of deep trenches in silicon (1996)
Mansano, Ronaldo Domingues ; Verdonck, Patrick Bernard; Maciel, H. S.
Source: Proceedings. Conference titles: Conference on the Brazilian Microelectronics Society. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, H. S. Isotropic etching of deep trenches in silicon. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1996). Isotropic etching of deep trenches in silicon. In Proceedings. São Paulo: Sbmicro.
NLM
Mansano RD, Verdonck PB, Maciel HS. Isotropic etching of deep trenches in silicon. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Mansano RD, Verdonck PB, Maciel HS. Isotropic etching of deep trenches in silicon. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Simple technique to reduce the influence of the series resistance on the bulk and soi mosfet parameters extraction (1996)
Nicolett, Aparecido Sirley; Martino, João Antonio
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Simple technique to reduce the influence of the series resistance on the bulk and soi mosfet parameters extraction. 1996, Anais.. Sao Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Nicolett, A. S., & Martino, J. A. (1996). Simple technique to reduce the influence of the series resistance on the bulk and soi mosfet parameters extraction. In Proceedings. Sao Paulo: Sbmicro.
NLM
Nicolett AS, Martino JA. Simple technique to reduce the influence of the series resistance on the bulk and soi mosfet parameters extraction. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Nicolett AS, Martino JA. Simple technique to reduce the influence of the series resistance on the bulk and soi mosfet parameters extraction. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Fabrication of freestanding polysilicon thermal filaments (1996)
Furlan, Rogério ; Zemel, Jay N
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
FURLAN, Rogério e ZEMEL, Jay N. Fabrication of freestanding polysilicon thermal filaments. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Furlan, R., & Zemel, J. N. (1996). Fabrication of freestanding polysilicon thermal filaments. In Proceedings. São Paulo: Sbmicro.
NLM
Furlan R, Zemel JN. Fabrication of freestanding polysilicon thermal filaments. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Furlan R, Zemel JN. Fabrication of freestanding polysilicon thermal filaments. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Simple method to reduce the transient effect in soi mosfet at 77k (1996)
Sonnenberg, Victor ; Martino, João Antonio
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Simple method to reduce the transient effect in soi mosfet at 77k. 1996, Anais.. Sao Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Sonnenberg, V., & Martino, J. A. (1996). Simple method to reduce the transient effect in soi mosfet at 77k. In Proceedings. Sao Paulo: Sbmicro.
NLM
Sonnenberg V, Martino JA. Simple method to reduce the transient effect in soi mosfet at 77k. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Sonnenberg V, Martino JA. Simple method to reduce the transient effect in soi mosfet at 77k. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Electroless mechanism of 'CU' plating onto 'SI' during hf-last cleanings (1996)
Santos Filho, Sebastião Gomes dos ; Hasenack, Claus Martin
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
SANTOS FILHO, Sebastião Gomes dos e HASENACK, Claus Martin. Electroless mechanism of 'CU' plating onto 'SI' during hf-last cleanings. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Santos Filho, S. G. dos, & Hasenack, C. M. (1996). Electroless mechanism of 'CU' plating onto 'SI' during hf-last cleanings. In Proceedings. São Paulo: Sbmicro.
NLM
Santos Filho SG dos, Hasenack CM. Electroless mechanism of 'CU' plating onto 'SI' during hf-last cleanings. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Santos Filho SG dos, Hasenack CM. Electroless mechanism of 'CU' plating onto 'SI' during hf-last cleanings. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Analysis of the subthreshold slope transition region in soi mosfet (1996)
Sonnenberg, Victor ; Martino, João Antonio
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Analysis of the subthreshold slope transition region in soi mosfet. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Sonnenberg, V., & Martino, J. A. (1996). Analysis of the subthreshold slope transition region in soi mosfet. In Proceedings. São Paulo: Sbmicro.
NLM
Sonnenberg V, Martino JA. Analysis of the subthreshold slope transition region in soi mosfet. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Sonnenberg V, Martino JA. Analysis of the subthreshold slope transition region in soi mosfet. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Boundary-scan test of multichip modules (1996)
Cossi Junior, Roberto Cangellar; Amazonas, José Roberto de Almeida
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
COSSI JUNIOR, Roberto Cangellar e AMAZONAS, José Roberto de Almeida. Boundary-scan test of multichip modules. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Cossi Junior, R. C., & Amazonas, J. R. de A. (1996). Boundary-scan test of multichip modules. In Proceedings. São Paulo: Sbmicro.
NLM
Cossi Junior RC, Amazonas JR de A. Boundary-scan test of multichip modules. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Cossi Junior RC, Amazonas JR de A. Boundary-scan test of multichip modules. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Boron (bf2) influence on cobalt disilicide formation (1996)
Simões, Eliphas Wagner; Bulla, Douglas Anderson Pereira; Furlan, Rogério
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMÕES, Eliphas Wagner e BULLA, Douglas Anderson Pereira e FURLAN, Rogério. Boron (bf2) influence on cobalt disilicide formation. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Simões, E. W., Bulla, D. A. P., & Furlan, R. (1996). Boron (bf2) influence on cobalt disilicide formation. In Proceedings. São Paulo: Sbmicro.
NLM
Simões EW, Bulla DAP, Furlan R. Boron (bf2) influence on cobalt disilicide formation. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Simões EW, Bulla DAP, Furlan R. Boron (bf2) influence on cobalt disilicide formation. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures (1996)
Alayo Chávez, Marco Isaías ; Pereyra, Inés
Source: Proceedings. Conference titles: Conference of the Brazilian Microeletronics Society. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALAYO CHÁVEZ, Marco Isaías e PEREYRA, Inés. Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Alayo Chávez, M. I., & Pereyra, I. (1996). Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. In Proceedings. São Paulo: Sbmicro.
NLM
Alayo Chávez MI, Pereyra I. Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Alayo Chávez MI, Pereyra I. Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Fully integrated cmos clock recovery at gbits / rates (1996)
Moreira, L C; Toma, M; Soares Junior, João Navarro ; Van Noije, Wilhelmus Adrianus Maria
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MOREIRA, L C et al. Fully integrated cmos clock recovery at gbits / rates. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Moreira, L. C., Toma, M., Soares Junior, J. N., & Van Noije, W. A. M. (1996). Fully integrated cmos clock recovery at gbits / rates. In Proceedings. São Paulo: Sbmicro.
NLM
Moreira LC, Toma M, Soares Junior JN, Van Noije WAM. Fully integrated cmos clock recovery at gbits / rates. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Moreira LC, Toma M, Soares Junior JN, Van Noije WAM. Fully integrated cmos clock recovery at gbits / rates. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Thermodynamic interaction in 'CO'-'SI'-'AS' and 'CO'-'SI'-b systems (1996)
Simões, Eliphas Wagner; Furlan, Rogério
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMÕES, Eliphas Wagner e FURLAN, Rogério. Thermodynamic interaction in 'CO'-'SI'-'AS' and 'CO'-'SI'-b systems. 1996, Anais.. Sao Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Simões, E. W., & Furlan, R. (1996). Thermodynamic interaction in 'CO'-'SI'-'AS' and 'CO'-'SI'-b systems. In Proceedings. Sao Paulo: Sbmicro.
NLM
Simões EW, Furlan R. Thermodynamic interaction in 'CO'-'SI'-'AS' and 'CO'-'SI'-b systems. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Simões EW, Furlan R. Thermodynamic interaction in 'CO'-'SI'-'AS' and 'CO'-'SI'-b systems. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Design and analysis of dcfl and scfl logic gates in 'GA''AS' mesfet technology (1996)
De Marco, W M S; Custodio, R M F; Swart, Jacobus Willibrordus; Van Noije, Wilhelmus Adrianus Maria
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DE MARCO, W M S et al. Design and analysis of dcfl and scfl logic gates in 'GA''AS' mesfet technology. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
De Marco, W. M. S., Custodio, R. M. F., Swart, J. W., & Van Noije, W. A. M. (1996). Design and analysis of dcfl and scfl logic gates in 'GA''AS' mesfet technology. In Proceedings. São Paulo: Sbmicro.
NLM
De Marco WMS, Custodio RMF, Swart JW, Van Noije WAM. Design and analysis of dcfl and scfl logic gates in 'GA''AS' mesfet technology. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
De Marco WMS, Custodio RMF, Swart JW, Van Noije WAM. Design and analysis of dcfl and scfl logic gates in 'GA''AS' mesfet technology. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Gerpar and gertab 2: two fsm decomposition optimization tools (1996)
Llanos Quintero, Carlos Humberto; Strum, Marius
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LLANOS QUINTERO, Carlos Humberto e STRUM, Marius. Gerpar and gertab 2: two fsm decomposition optimization tools. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Llanos Quintero, C. H., & Strum, M. (1996). Gerpar and gertab 2: two fsm decomposition optimization tools. In Proceedings. São Paulo: Sbmicro.
NLM
Llanos Quintero CH, Strum M. Gerpar and gertab 2: two fsm decomposition optimization tools. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Llanos Quintero CH, Strum M. Gerpar and gertab 2: two fsm decomposition optimization tools. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Internal architecture design of an image interpolator circuit using vhdl (1996)
Martins, C A P S; Zuffo, João Antonio; Kofuji, Sergio Takeo
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINS, C A P S e ZUFFO, João Antonio e KOFUJI, Sergio Takeo. Internal architecture design of an image interpolator circuit using vhdl. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Martins, C. A. P. S., Zuffo, J. A., & Kofuji, S. T. (1996). Internal architecture design of an image interpolator circuit using vhdl. In Proceedings. São Paulo: Sbmicro.
NLM
Martins CAPS, Zuffo JA, Kofuji ST. Internal architecture design of an image interpolator circuit using vhdl. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Martins CAPS, Zuffo JA, Kofuji ST. Internal architecture design of an image interpolator circuit using vhdl. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Trabalho de evento
Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations (1996)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 13 nov. 2024.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1996). Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations. In Proceedings. São Paulo: Sbmicro.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations. Proceedings. 1996 ;[citado 2024 nov. 13 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations. Proceedings. 1996 ;[citado 2024 nov. 13 ]

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