Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations (1996)
- Authors:
- Autor USP: MARTINO, JOAO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título: Proceedings
- Conference titles: Conference of the Brazilian Microelectronics Society
-
ABNT
NICOLETT, Aparecido Sirley et al. Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 08 nov. 2024. -
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1996). Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations. In Proceedings. São Paulo: Sbmicro. -
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations. Proceedings. 1996 ;[citado 2024 nov. 08 ] -
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations. Proceedings. 1996 ;[citado 2024 nov. 08 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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