Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations (1996)
- Authors:
- USP affiliated author: MARTINO, JOAO ANTONIO - EP
- School: EP
- Subject: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Proceedings
- Conference title: Conference of the Brazilian Microelectronics Society
-
ABNT
NICOLETT, Aparecido Sirley et al. Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 01 jul. 2022. -
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1996). Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations. In Proceedings. São Paulo: Sbmicro. -
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations. Proceedings. 1996 ;[citado 2022 jul. 01 ] -
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Improved channel lenght and series resistence extraction for short-channel mosfets suffering from mobility degradations. Proceedings. 1996 ;[citado 2022 jul. 01 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Caracterização elétrica de dispositivos SOI MOS em baixa temperatura
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton
- Low frequency noise assessment in advanced UTBOX SOI n-channel MOSFETs
- Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities
- Understanding and optimizing the floating body retention in FDSOI UTBOX
- Halo optimization for 0.13 micron SOI CMOS technology
- Analog performance of dynamic threshold voltage SOI MOSFET
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