Eletronic structure of the 'MN IND.4' complex in silicon (1990)
Conference titles: Brazilian School of Semiconductors Physics. Unidade: IFAssunto: MATÉRIA CONDENSADA
ABNT
LINO, A T et al. Eletronic structure of the 'MN IND.4' complex in silicon. 1990, Anais.. Singapure: World Scientific, 1990. . Acesso em: 18 ago. 2024.APA
Lino, A. T., Leite, J. R., Assali, L. V. C., & Gomes, V. M. S. (1990). Eletronic structure of the 'MN IND.4' complex in silicon. In . Singapure: World Scientific.NLM
Lino AT, Leite JR, Assali LVC, Gomes VMS. Eletronic structure of the 'MN IND.4' complex in silicon. 1990 ;[citado 2024 ago. 18 ]Vancouver
Lino AT, Leite JR, Assali LVC, Gomes VMS. Eletronic structure of the 'MN IND.4' complex in silicon. 1990 ;[citado 2024 ago. 18 ]