Behavior of the electron-hole gas in quantum wells in 'GAAS-AL IND.X''GA IND.1-X''AS' heterosctruture under in plane magnetic fields (1987)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; GOMES, VIVILI MARIA SILVA - IF
- Unidade: IF
- Assunto: CAMPO MAGNÉTICO
- Language: Português
- Source:
- Título: Physical Review B
- Volume/Número/Paginação/Ano: v.35, n.6 , p.2896-903, 1987
-
ABNT
OLIVEIRA, G M G et al. Behavior of the electron-hole gas in quantum wells in 'GAAS-AL IND.X''GA IND.1-X''AS' heterosctruture under in plane magnetic fields. Physical Review B, v. 35, n. 6 , p. 2896-903, 1987Tradução . . Acesso em: 23 jan. 2026. -
APA
Oliveira, G. M. G., Gomes, V. M. S., Chaves, A. S., Leite, J. R., & Worlock, J. M. (1987). Behavior of the electron-hole gas in quantum wells in 'GAAS-AL IND.X''GA IND.1-X''AS' heterosctruture under in plane magnetic fields. Physical Review B, 35( 6 ), 2896-903. -
NLM
Oliveira GMG, Gomes VMS, Chaves AS, Leite JR, Worlock JM. Behavior of the electron-hole gas in quantum wells in 'GAAS-AL IND.X''GA IND.1-X''AS' heterosctruture under in plane magnetic fields. Physical Review B. 1987 ;35( 6 ): 2896-903.[citado 2026 jan. 23 ] -
Vancouver
Oliveira GMG, Gomes VMS, Chaves AS, Leite JR, Worlock JM. Behavior of the electron-hole gas in quantum wells in 'GAAS-AL IND.X''GA IND.1-X''AS' heterosctruture under in plane magnetic fields. Physical Review B. 1987 ;35( 6 ): 2896-903.[citado 2026 jan. 23 ] - Estrutura eletronica de impurezas em germanio
- Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields
- Behavior of carriers in quantum wells in 'GA''AS'-'AL IND.X''GA IND.1-X''AS' superlattices under in-plane magnetic fields
- Electronic subbands at gaas-algaas heterojunctions in paralel magnetic fields
- Efeito de campos magneticos paralelos a pocos quanticos sobre as bandas de valencia e conducao em hetero-estruturas de 'GA''AS'-'AL''GA''AS'
- Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon
- Electronic structure of oxygen-related complex defects in silicon
- Impurity levels induced by a c impurity in 'GA''AS'
- Intersubband transition energies in quantum wells in n-type gaas-'AL IND.X''GA IND.1-X'as heterostructures
- Impurezas de metal de transicao em compostos iii-v
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